广利油田沙四上亚段成藏地质特征与勘探方向

广利油田位于东营凹陷中央隆起带东端南翼,根据地质特征及测井剖面的综合分析,认为该区沙四上亚段发育了辫状河三角洲前缘沉积,辫状河道和前缘砂坝共同控制了辫状河三角洲前缘砂体的形态展布.辫状河道砂体和前缘砂坝砂体是广利油田的优质储层.广利油田西部的牛庄洼陷有沙三中、下亚段和沙四上亚段2套烃源岩,特别是沙四上亚段的油页岩可以为广利油田提供充足的油气.广利油田鼻状构造和辫状河三角洲前缘砂体的良好配置是油气聚集成藏的关键因素,鼻状背斜的西翼是广利油田下一步勘探的有利方向.     

High accuracy calculation of the hydrogen negative ion in strong magnetic fields

Using a full configuration-interaction method with Hylleraas-Gaussian basis function, this paper investigates the 1¹0⁺, 1¹(–1)⁺ and 1¹(–2)⁺ states of the hydrogen negative ion in strong magnetic fields. The total energies, electron detachment energies and derivatives of the total energy with respect to the magnetic field are presented as functions of magnetic field over a wide range of field strengths. Compared with the available theoretical data, the accuracy for the energies is enhanced significantly. The field regimes 3 < γ < 4 and 0.02 < γ < 0.05, in which the 1¹(–1)⁺ and 1¹(–2)⁺ states start to become bound, respectively, are also determined based on the calculated electron detachment energies.     

Mg/Cd共掺杂ZnO电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势法,研究了Mg/Cd(不同的Cd浓度)共掺杂ZnO的电子结构和光学性质.研究表明:Mg/Cd共掺杂ZnO,体系的晶胞尺寸变大,但结构稳定.当Mg/Cd为1:1时,吸收边略微发生蓝移.随Cd的掺杂浓度增加,导带部分逐渐下移,禁带宽度变窄,出现红移现象.除此之外体系的吸收率和反射率也减小.说明Mg/Cd共掺杂ZnO,不仅使得体系光学谱丰富,而且透射性增强.这对实验中制备出高透射率的材料具有一定的指导意义.     

8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide分子的晶体结构

运用层析法、结晶法从狭苞橐吾全草中分离得到艾里莫芬烷型倍半萜8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide化合物,并通过质谱、核磁共振氢谱和碳谱、氢核-氢核相关谱、异核多量子相干谱和异核多键相干谱进行结构鉴定．其单晶经X射线衍射测试表明,其晶体属正交晶系,空间群为P212121,晶胞参数为: a=6．8519(5),b=10．7191(8),c=18．5942(14)A,V=1365．67(18) A3,Z=4,Dc=1．354 mg／m3．F(000)=592,μ=0．101 mm-1     

基于多波长布里渊光纤激光器的温度传感特性

为了在高腐蚀、高辐射和强电磁干扰等复杂环境下实现对温度的精确测量,设计并实验了一种基于传感多波长布里渊光纤激光器(MBFL)和参考MBFL的高灵敏度全光纤温度传感器。理论和实验上分析了布里渊散射光的频移与温度变化之间的关系,根据输出斯托克斯激光信号对拍频所得微波信号的频移变化,测量温度的变化。通过带宽为0.1 nm的可调谐光滤波器选择第10阶斯托克斯激光信号对输出,并对其进行拍频探测,实现对传感MBFL周围温度变化的精确测量。通过拍频探测第10阶斯托克斯激光信号对,得出其灵敏度为10.829 MHz/℃。当选用第10阶斯托克斯激光信号对进行温度测量时,温度变化40℃的测量误差约为0.138℃。     

图形处理器并行计算用于离子发动机粒子模拟

 为了研究离子发动机羽流对航天器的影响,采用质点网格-蒙特卡罗碰撞方法对离子发动机羽流中的交换电荷离子进行了模拟。利用计算设备统一架构技术,开发出一套基于图形处理器的并行粒子模拟程序。随机数生成采用并行MT19937伪随机数生成器算法,电场方程使用完全近似存储格式的代数多重网格法求解。r-z轴对称坐标系中,在z=0 m处获得的电流密度均值为4.5×10^-5 A/m²,图形处理器所得结果与中央处理器模拟结果吻合。在16核心的NVIDIA GeForce 9400 GT图形显示卡上,取得相对于Intel Core 2 E6300中央处理器4.5~10.0倍的加速比。     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

New bifurcations of basin boundaries involving Wada and a smooth Wada basin boundary

This paper demonstrates and analyses double heteroclinic tangency in a three-well potential model, which can produce three new types of bifurcations of basin boundaries including from smooth to Wada basin boundaries, from fractal to Wada basin boundaries in which no changes of accessible periodic orbits happen, and from Wada to Wada basin boundaries. In a model of mechanical oscillator, it shows that a Wada basin boundary can be smooth.     

An alternating periodic－chaotic ISI sequence of HH neuron under external sinusoidal stimulus

A study of Hodgkin－Huxley (HH) neuron under external sinusoidal excited stimulus is presented in this paper. As is well known, the stimulus frequency is to be considered as a bifurcate parameter, and numerous phenomena, such as synchronization, period, and chaos appear alternatively with the changing of the stimulus frequency. For the stimulus frequency less than 2f_B (f_B being the base frequency in this paper), the simulation results demonstrate that the single HH neuron could completely convey the sinusoidal signal in anti-phase into interspike interval (ISI) sequences. We also report, perhaps for the first time, another kind of phenomenon, the beat phenomenon, which exists in the phase dynamics of the ISI sequences of the HH neuron stimulated by a sinusoidal current. It is shown furthermore that intermittent transition results in the general route to chaos.