Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors （PDs） with 50% cut-off wavelength of 1.75 μm at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 × 10^-6 A/cm^2 at 0 V bias and 2.24 × 10^-4 A/cm^2 at a reverse bias of 5 V. At a wavelength of 1.55 μm, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 μm diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.     

Characteristics of a Novel Water Plasma Torch

Relying on heat generated by plasma arc heating liquid water into steam as a swirl gas, a water plasma torch has the distinctive steam generation structure, which has various applications such as in the treatment of organic waste and hydrogen production for fuel cells in future vehicles. The operational features of the water plasma torch and water phase change process in the discharge chamber are investigated based on the temporal evolution of the voltage and current. The optical emission spectrum measurement shows that the water molecule in the plasma is decomposed into 14, OH and O radicals. As the electrodes do not require water-cooling, the thermal efficiency of the torch is very high, which is confirmed by analytical calculation and experimental measurement.     

2cm上变频器组件Ⅰ的设计与测试

介绍了某雷达系统2 cm上变频器组件Ⅰ的研制、设计理念及测试结果。该组件具有结构紧凑、制作容易、技术性能稳定等特点。     

基于传感器控制的多级磁阻式电磁炮制作与研究

针对磁阻式电磁发射器的技术特点,设计了一种基于传感器控制的多级电磁炮射击装置,并成功试制了电磁发射装置样品,通过单级加电压和改变炮弹初始位置的方法对样品进行试射,并在此基础上加装三级加速,从而得出三级电磁炮的发射最优配置,试验证明,在280V电压下,炮弹的出口速度达到27.52m/s.     

Development of the liquid level meters for the PandaX dark matter detector

The two-phase xenon detector is at the frontier of dark matter direct search. This kind of detector uses liquid xenon as the sensitive target and is operated in two-phase (liquid/gas) mode, where the liquid level needs to be monitored and controlled in sub-millimeter precision. In this paper, we present a detailed design and study of two kinds of level meters for the PandaX dark matter detector. The long level meter is used to monitor the overall liquid level while short level meters are used to monitor the inclination of the detector. These level meters are cylindrical capacitors that are custom-made from two concentric metal tubes. Their capacitance values are read out by a universal transducer interface chip and are recorded by the PandaX slow control system. We present the developments that lead to level meters with long-term stability and sub-millimeter precision. Fluctuations (standard deviations) of less than 0.02 mm for the short level meters and less than 0.2 mm for the long level meter were achieved during a few days of test operation.     

分子束外延生长的(GaAs1－xSbx/InyGa1－yAs)/GaAs量子阱光致发光谱研究

报道了(GaAs_1-xSb_x/In_yGa_1-yAs)/Ga As量子阱结构的分子束外延生长与光致发光谱研究结果.变温与变激发功率光致发光谱的研究表明了此结构 为二型量子阱发光性质.讨论了光谱双峰结构的跃迁机制.通过优化生长条件，获得了室温1 31μm发光. 关键词： 分子束外延 量子阱 二型发光     

Room temperature continuous wave operation of 1.33-um InAs/GaAs quantum dot laser with high output power

Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35μm for a 20-μm ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4×10~(10) cm-2. The laser keeps lasing at ground state until the temperature reaches 65℃.     

Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

We report on the resonance fluorescence(RF) from single In As quantum dots(QDs) emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He–Ne laser is necessary to be used as a gate laser for obtaining RF. Rabi oscillation with more than one period is observed through the picosecond(ps) pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.     

超声调制光法测量弱散射液体的声速

本文介绍一种利用超声调制光波现象测量超声波在弱散射液中传输速度的方法。     

Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the com- bination of a growth temperature of 490℃, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1×10^-6 Torr （1 Torr = 1.33322×10^2 Pa）, provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a 19.7-GHz repetition rate.