Enhancing visible-light photocatalytic activity of α-Bi2O3 via non-metal N and S doping

In recent years, some important research indicated that the visible-light activity of photocatalysts could be enhanced via incorporating p-block non-metal elements into the lattice. In this paper, we investigated the electronic structures of pure and different non-metal （C, N, S, F, Cl, and Br） doped α-Bi2O3 using first-principles calculations based on the density functional theory. The band structures, the electronic densities of states, and the effective masses of electrons and holes for doped α-Bi2O3 were obtained and analyzed. The N and S dopings narrowed the band gap and reduced the effective mass of the carriers, which are beneficial for the photocatalytic performance. The theoretical predication was further confirmed by the experimental results.     

Strong and broadband terahertz absorber using Si02-based metamaterial structure

We design and experimentally demonstrate a broadband metamaterial absorber in the terahertz （THz） band based on a periodic array of aluminum （A1） squares with two different sizes. A thin silicon dioxide （SiO2） film rather than a conventional polyimide （PI） layer is used as a dielectric spacer to separate A1 squares from the platinum （Pt） ground plane in our design, which significantly improves the design precision and the feasibility of the device fabrication. The combination of different sizes of AI squares gives rise to an absorption bandwidth of over 210 GHz with an absorption of over 90%. Our results also show that our device is almost polarization-insensitive. It works very well for all azimuthal angles with an absorption of beyond 80%.     

K~±介子与~(40-48)Ca的弹性散射及中子分布的分析

本文在Eikonal近似的框架下,用K±N散射分波相移和~(40-48)Ca的三参数Fermi型密度分布函数计算了K~±与~(40-48)Ca的弹性散射微分截面;在比较由各家提供的基本参数所得到的理论计算值与实验符合程度的基础上,通过调整中子分布函数的参数,改善了理论计算值与实验值的符合.结果表明,~(40)Ca的中子分布比较其质子的分布有较小的均方根半径(约小0.15fm)和较薄的表面厚度.这是与H.F.计算相容的,并与其他作者对中能质子与钙的弹性散射分析的结果相一致.     

K±介子与40—48Ca的弹性散射及中子分布的分析

本文在Elikonal近似的框架下, 用K^±N散射分波相移和^40—48Ca的三参数Fermi型密度分布函数计算了K^±与^40—48Ca的弹性散射微分截面; 在比较由各家提供的基本参数所得到的理论计算值与实验符合程度的基础上, 通过调整中子分布函数的参数, 改善了理论计算值与实验值的符合. 结果表明, ⁴⁰Ca的中子分布比较其质子的分布有较小的均方根半径(约小0.15fm)和较薄的表面厚度. 这是与H.F. 计算相容的, 并与其他作者对中能质子与钙的弹性散射分析的结果相一致.     

激光二极管泵浦单频连续工作的Nd：YAG激光器

在国内首次报道了激光二极管泵浦单频连续工作的Ｎｄ：ＹＡＧ激光器，采用扭摆模腔技术方法，在８０８ｎｍ激光二极管连续泵浦下，取得１０６４ｎｍ连续单频工作，输出功率５５ｍＷ的结果，泵浦阈值２７６ｍＷ，斜率效率２３％，线宽小于２５ＭＨｚ（受仪器测量精度限制）。     

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采用了TIG对核聚变用316LN奥氏体不锈钢进行焊接,并对焊接接头进行了焊后热处理,利用光学显微镜、扫描电镜分析手段研究了焊后热处理对焊接接头微观组织和力学性能的变化.试验结果表明,焊缝中为奥氏体组织,并未发现第二相析出物存在.焊后热处理对接头的拉伸性能影响不大,均断裂在母材位置,但显著提高了接头的延伸率.接头低温冲击试验也展现了良好的抗低温冲击性能.断口分析发现,接头呈韧性断裂.     

噪声环境中两粒子纠缠态的纠缠消相干

借助于共生纠缠度和输入输出保真度考察了初始处于纠缠态的两粒子在联合噪声环境中的消纠缠特性。结果表明：两粒子纠缠态可分为相干保持态和脆弱纠缠态，对于脆弱纠缠态分析了它们在低温条件欧姆型耗散下的纠缠消相干演化动力学。     

8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide分子的晶体结构

运用层析法、结晶法从狭苞橐吾全草中分离得到艾里莫芬烷型倍半萜8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide化合物,并通过质谱、核磁共振氢谱和碳谱、氢核-氢核相关谱、异核多量子相干谱和异核多键相干谱进行结构鉴定．其单晶经X射线衍射测试表明,其晶体属正交晶系,空间群为P212121,晶胞参数为: a=6．8519(5),b=10．7191(8),c=18．5942(14)A,V=1365．67(18) A3,Z=4,Dc=1．354 mg／m3．F(000)=592,μ=0．101 mm-1     

Generation of Two-Atom Cluster State via Cavity QED

We propose a physical scheme for generating a two-atom cluster state through the simultaneous interaction of two two-level atoms with a single-mode cavity field prepared initially in an odd-coherent state under a large-detuned limit. The influence of the dissipation constant, the intensity of the field and the imperfect manipulation on the preparation scheme are investigated. It is shown that when the intensity of the cavity is large enough, the influence of the cavity decay is ettlciently suppressed. The possible error in the implementation of the cluster state is negligible when the time difference between two atoms crossing the cavity axis is small. It is suggested that the scheme can be realized by current technologies.     

Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

The structures of Pt clusters on nitrogen-,boron-,silicon-doped graphenes are theoretically studied using densityfunctional theory.These dopants(nitrogen,boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form.The formation energy of the silicon-graphene system is lower than those of the nitrogen-,boron-doped graphenes,indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene.The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen-and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size.The stable structures of Pt clusters on the doped-graphenes are dimeric,triangle and tetrahedron with the increase of the Pt coverage.Of all the studied structures,the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.