Φ1m平面镜的力学分析及实验研究

空间太阳望远镜(SST)的装校需要一个倒置的直径为1m的平面镜,此平面镜的面形精度决定了SST的装校成败。平面镜的支撑采用滑轮砝码机构,具有18个牵引点,每个牵引点的牵引力是独立可调的。在此支撑下,利用有限元分析方法分析了平面镜的变形情况,提出了用主动光学原理对牵引力大小进行优化的方法,计算出了保持平面镜具有良好面形时所需要的牵引力的大小。采用Ritchey_Common方法对平面镜进行了测量。测量结果表明,平面镜面形精度的均方根值优于λ/30(λ=633nm),满足了SST的装校要求。     

高温高压下二辉橄榄岩的阻抗谱实验研究

 在1.0～4.0 GPa压力、1 073～1 573 K温度和10^-1～10⁷ Hz频率条件下,利用SARLTON-1260阻抗-增益/相位分析仪,就位测定了二辉橄榄岩的阻抗谱。实验结果表明：二辉橄榄岩的阻抗谱对频率具有很强的依赖性,并从阻抗谱的测试原理（颗粒内部、颗粒边缘、样品与电极间的导电机制）上做出了解释;温度是决定二辉橄榄岩电导率的一个重要物理参数,电导率随着温度的升高而增大,lg σ与1/T之间符合Arrenhius关系式;在高压实验中第一次将压力作为测量二辉橄榄岩电导率重要的约束因素,随着压力的增大,电阻率升高、电导率降低。     

锂喹啉配合物作为电子注入层对有机电致发光器件性能的影响

利用锂喹啉配合物(8-hydroxy-quinolinato lithium,Liq)作电子注入层,制备了结构为氧化铟锡／锂喹啉配合物铝{ITO(indium tin oxidc) TPD(N,N′-di-phenyl-N,N′-bis(3-mmethylphenyl)-l.l′biphenyl-4,4′diamine)/Alq3[tris-8-hydroxy-quinolinato)aluminum] Liq AI的电致发光器件。通过改变电子注入层Liq的厚度,考查了Liq厚度对器件电致发光效率及电流密度-电压关系的影响。实验表明Liq厚度大约为0．5nm左右时器件的性能最佳、电致发光效率约为没有Liq器件效率的5倍,而定电流下的工作电压最低,其原因可归于Liq在金属铝电极与有机层Alqs之间产生偶极层,使铝与有机层间的界面接近欧姆接触,从而使电子注入效率大幅提高;随着Liq厚度的增加,器件的电致发光效率降低,而定电流下的工作电压升高,与同类型以LiF作注入层的器件相比,这种器件性能受厚度影响而变化的趋势是类似的,但以Liq作注入层的器件具有较低的厚度敏感性,这是由于LiF为绝缘体,而Liq为半导体的缘故。Liq作注入层器件的这种对注入层厚度的不敏感性对批量生产中所用的大尺寸基底来说是非常有利的。     

用模糊方法确定实时系统中功能块的优先级

实时系统设计中确定功能块的优先级是一个重要环节，传统确定优先级的方法大都以某个单项因素为依据。本文利用模糊数学方法建立多目标系统模糊优选模型，并应用到实时系统中功能块的优先级决策上。     

Improvement of Properties of p-GaN by Mg Delta Doping

The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition.The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.     

A New Method for Calculating the Thermoelectric Efficiency

We present an approximate method for calculating the thermoelectric efficiency. The method has a high precision and is applicable to almost all of the thermoelectric devices. The expression for the thermoelectric efficiency we obtained does not involve the position variable, so the calculations are simplified greatly.     

Forward acceleration and generation of femtosecond megaelectronvolt electron beams by an ultrafast intense laser pulse

We present a new mechanism of energy gain of electrons accelerated by a laser pulse.It is shown thatwhen the intensity of an ultrafast intense laser pulse decreases rapidly along the direction of propagation,electrons leaving the pulse experience an action of ponderomotivc deceleration at the descending part ofa lower-intensity laser field than acceleration at the ascending part of a high-intensity field, thus gain netenergy from the pulse and move directly forward. By means of such a mechanism, a megaelectronvoltelectron beam with a bunch length shorter than 100 fs could be realized with an ultrafast(≤30 fs),intense (>10~(19)W/cm~2)laser pulse.     

Analysis of Ar line spectra from indirectly-driven implosion experiments on SGII facility

This paper reports on the indirectly-driven implosion experiments on SGII laser facility in which Ar emission spectrum from Ar-doped D-filled plastic capsule is recorded with the crystal spectrometer. Spectral features of Ar Heβ line and its associated satellites are analysed to extract the electron temperature and density of the implosion core. Non local thermal equilibrium (NLTE) collisional-radiative atomic kinetics and Strark broadening line shape are included in the present calculation. By comparing the calculated spectrum with the measured one, the core electron temperature and density are inferred to be 700 eV and 2.5×10²³ cm^-3 respectively. With these inferred values of electron temperature and density, neutron yield can be estimated to agree with the measured value in magnitude despite of the very simple model used for the estimation.     

O2流量对磁控溅射N掺杂TiO2薄膜成分及晶体结构的影响

利用直流脉冲磁控溅射方法在室温下通过改变O₂流量制备具有不同晶体结构的N掺杂TiO₂薄膜,利用台阶仪、X射线光电子能谱仪、X射线衍射仪、紫外-可见分光光度计等设备对薄膜沉积速率、化学成分、晶体结构、禁带宽度等进行分析.结果表明:所制备的薄膜元素配比约为TiO_1.68±0.06N_0.11±0.01,N为替位掺杂,所有样品退火前后均未形成Ti—N相结构,N掺杂TiO₂薄膜的沉积速率、晶体结构等主要依赖于O₂流量.在O₂流量为2 sccm时,N掺杂TiO₂薄膜沉积速率相对较高,薄膜为非晶态结构,但薄膜内含有锐钛矿(anatase)和金红石(rutile)相晶核,退火后薄膜呈anatase和rutile相混合结构,禁带宽度仅为2.86 eV.随着O₂流量的增加,薄膜沉积速率单调下降,退火后样品禁带宽度逐渐增加.当O₂流量为12 sccm时,薄膜为anatase相择优生长,退火后呈anatase相结构,禁带宽度为3.2 eV.综合本实验的分析结果,要在室温条件下制备晶态N掺杂TiO₂薄膜,需在高O₂流量(＞10 sccn)条件下制备. 关键词： 2薄膜')" href="#">N掺杂TiO₂薄膜 磁控溅射 化学配比 晶体结构     

AlB+n(n=2～10)团簇结构和红外振动光谱研究

用密度泛函理论的B3LYP方法在6-311G(d)水平上对AlB+n(n=2～10)团簇几何结构、稳定性、电子结构和成键特性进行了系统理论研究,得到了AlB+n(n=2～10)团簇的最稳定结构.结果表明,硼原子间容易聚集,铝原子处于整个硼原子集团的外围.与相应中性AlBn团簇相比,Al-B键作用变弱,使正价团簇(n=6...