相变乳状液的储冷模型与参数分析

本文建立了一种乳化的非牛顿相变功能流体的循环储冷模型,对影响其储冷性能的各项参数进行了模拟计算和分析。得出了描述不同储冷条件下与初始温度相关联的显热段和与乳液浓度相关联的潜热段储冷性能特征的无量纲关联式,以及储冷速率的相对比较。计算结果与有限条件下的测试结果基本吻合。该研究结果对采用潜热型功能相变流体储冷装置的设计具有参考价值。     

CSPD-1溶液物理显影研究

本文介绍了命名为CSPD-1溶液物理显影处理工艺,用于中国全息干板的实验研究结果;全面地总结了实验操作中的技术关键问题;对观察到的新工艺优越性产生的机制,作了初步的理论讨论。     

太赫兹波在一维反铁磁/电介质准周期光子晶体的传输性质

本文利用传递矩阵方法研究了电磁波倾斜入射时,一维反铁磁/电介质准周期光子晶体的透射性质.反铁磁层和电介质层按Fibonacci数列排列构成准周期光子晶体.通过数值模拟发现光子禁带中有透射峰出现, 而且随着准周期光子晶体级数的增加透射峰的数目也在增加.此外,透射峰受电介质层的介电常数、入射角度和电磁波偏振影响明显. 关键词： 反铁磁层 准周期光子晶体 太赫兹波传输性质     

多壁碳纳米管膜湿敏特性的研究

研究了多壁碳纳米管(MWNTs)薄膜的湿敏特性，实验所用的多壁碳纳米管是用热灯丝化学气相沉积法(CVD)合成的.分别对未修饰和修饰的多壁碳纳米管膜温度和湿度特性进行研究后发现，修饰的多壁碳纳米管对温度和湿度非常敏感，且对湿度的响应时间和恢复时间短，重复性好.而未修饰的多壁碳纳米管对温度和湿度不太敏感.对修饰多壁碳纳米管的湿敏特性进行了理论分析，给出了其理论表示式. 关键词： 多壁碳纳米管 化学修饰 湿敏特性 物理吸附     

A Comparison of Different Measures for Dynamical Event Mean Transverse Momentum Fluctuation

Various measures for the dynamical event mean transverse momentum fluctuation are compared with the real dynamical fluctuation using a Monte Carlo model. The variance calculated from the G-moments can reproduce the dynamical variance well, while those obtained by subtraction procedures are approximate measures for not very low multiplicity. Фpt, proposed by Gadzicki M and Mrowczynski S [Z. Phys. C 54 (1992)127], can also serve as an approximate measure after being divided by the square root of mean multiplicity.     

Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD

Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (T_s) and silane concentration (SC=[SiH_4]/[SiH_4+H_2]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of T_s and SC. The results of x-ray diffraction (XRD) measurements indicated that T_s also influences the crystal orientation of the Si:H films. The modulation effect of T_s on crystalline volume fraction (X_c) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and T_s. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing T_s and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD.     

激光对电视成像跟踪系统的软杀伤效应研究

分析了电视成像跟踪系统的组成原理,在开展脉冲激光干扰CCD的实验基础上,进行了激光对电视成像跟踪系统的软杀伤实验与理论分析。实验指出,激光对电视成像跟踪系统的软杀伤主要是对CCD光电探测系统的软杀伤,软杀伤效果如何与激光成像是否位于跟踪系统的波门之内有很大关系。     

计算机辅助装调与传统基准传递技术相结合实现三镜消像散系统的装调

为满足复杂航天光学系统对精度的要求,克服传统基准传递技术与计算机辅助装调技术对多于3片反射镜的复杂光学系统进行装调时存在的局限性,提出了两种技术相结合的装调方法。采用提出的方法对三镜消像散(TMA)空间相机进行了装调,结果显示:三镜在Y向和Z向的失调量分别由18.651和9.879 mm降低到1.036和0.102 mm,系统波前差达到全视场平均值1/14λ(RMS)。结果证明:此方法能有效缩短装调时间并达到系统要求的精度指标,对于多镜复杂光学系统装调具有指导和参考价值。     

光子晶体微纳传感技术的理论与实验研究进展

光子晶体(PC)微纳传感器具有体积小、易集成、响应时间快、控光能力强、可实现无标签检测以及设计灵活等优点,在工业生产、海洋探测、生物医疗检测及环境监测等领域展现出巨大的应用前景。针对基于一维纳米束PC与二维平板PC的微纳光子传感技术,从传感器结构设计和传感性能提升方面,分析了当前国内外PC微纳传感的关键理论和实验技术进展,并通过对比分析,探讨了PC微纳传感技术在未来应用中所面临的挑战及未来发展的趋势。     

The research on suspended ZnO nanowire field-effect transistor

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I--V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on--off current ratio of ～10⁵. When V_DS=2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage V_TH was about 0.6 V, the electron mobility was on average 50.17 cm²/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96× 10²Ω cm at V_GS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.