无线输电演示仪

自制的无线输电演示仪, 能直观演示无线输电的两种方式, 取得良好的教学效果, 该演示仪能让学生 体念电磁波的魅力, 激发学生的好奇心, 点燃学生的科学兴趣, 提高学生的科学素养     

Kerr效应对非线性J-C模型辐射谱的影响

研究了Kerr介质腔中非线性J-C模型的辐射谱.导出了双模初始光场处于任意量子态时辐射谱的计算公式,给出了光场处于数态、相干态和压缩真空态时的数值结果,讨论了Kerr效应和初始场强对辐射谱的影响.发现在光子数态的情况下,Kerr效应使低频峰增强、高频峰减弱,并使各峰向右移动.在初始腔场为较强的相干态时,原子辐射谱明显地分成两个拱形的梳状峰群,Kerr效应的增强使左侧峰群增高,右侧的边峰受到抑制.在压缩真空态情况下,边带峰只出现在中心频率双峰的左侧,随Kerr效应和初始场的增强,边峰个数也随之增多.无论哪种情况都破坏谱结构的对称性,在强场条件下Kerr效应的影响更加显著.     

Rapid Fabrication of Three-Dimensional Woodpile Photonic Crystals by Means of Two-Photon Photopolymerization

Two-photon photopolymerization （TPP） of femtosecond laser is a promising method to fabricate three-dimensional woodpile photonic crystals （PCs）. We build micro-fabricatlon system based on the principle of TPP. Three- dimensional woodpile PCs consisting of in-plane rod distances ranging from 1000nm to 2000nm are fabricated by focusing femtosecond laser in photosensitive liquid resin ORMOCER. The properties of the PCs are also discussed, and fundamental photonic band gaps in middle-infrared range are measured, whose in-plane rod distances are 1500nm and 2000 nm. Three-dimenslonal woodpile PC devices with desired defects, such as cross-waveguide and micro-laser structures, are introduced easily by TPP. We fabricate the three-dimensional woodpile PCs in the liquid resin at the fast scanning speed of 120μm/s.     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

Kerr介质中双原子-压缩真空场系统的腔场谱

研究了含Kerr介质腔中耦合双原子间与双模均处于压缩真空态的光场拉曼相互作用过程的腔场谱.通过求解本征方程导出了双模光场处于任意强度时腔场谱的计算公式,给出了数值计算结果.发现在两模初始场均为弱场时,Kerr介质和原子间的耦合作用对谱结构的影响较小;当双模初始场均为强场时,两模主峰的右侧出现了半梳状边峰,随Kerr效应的增强,峰间距逐渐加宽,并向高频方向扩展,在Kerr效应较强时,两模边峰的峰高出现高低相间的现象.     

非等同双原子与双模腔场拉曼相互作用模型的腔场谱

研究了非等同双原子与双模腔场拉曼相互作用模型的腔场谱,分析了谱结构随原子与腔场相对耦合常数R=g2/g1的变化规律,发现R对真空场、弱场、强场谱结构都有不同程度的影响.当R=1或R=0时,一般呈现简并的谱结构,而当R介于0与1之间时,腔场谱一般呈现复杂的非对称多峰结构.同时还发现,当R固定不变时,低频腔场初始场强对高频真空场谱结构也有较明显的影响. 关键词： 量子光学 腔场谱 拉曼相互作用 双模腔场     

极化诱导实现AlGaN薄膜材料中的超高电子浓度(1020cm-3)掺杂

材料的载流子浓度和迁移率是影响器件性能的关键因素, 变温Hall测试结果证明杂质掺杂AlGaN中的载流子浓度和迁移率随温度 降低而减小.然而极化诱导掺杂的载流子浓度和迁移率不受温度变化的影响.以准绝缘 的GaN体材料作为衬底, 在组分分层渐变的AlGaN中实现的极化诱导掺杂浓度 仅仅在10¹⁷ cm^-3数量级甚至更低. 本研究采用载流子浓度为10¹⁶ cm^-3量级的非有意n型掺杂GaN模板为衬底, 用极化诱导掺杂技术在分子束外延生长的AlGaN薄膜材料中实现了高 达10²⁰ cm^-3 量级的超高电子浓度. 准绝缘的体材GaN半导体作衬底时, 只有表面自由电子作为极化掺杂源, 而非有意掺杂的GaN模板衬底除了提供表面自由电子外,还能为极化电场 提供更多的自由电子"源", 从而实现超高载流子浓度的n型掺杂.     

Design and simulation of the wire scanner for the injector linac of BEPCⅡ

BEPCⅡ, the upgrade project of Beijing Electron Positron Collider (BEPC), is an accelerator with large beam current and high luminosity, so an efficient and stable injector is required. Several beam diagnostic and monitoring instruments are used. A new diagnostic instrument — wire scanner, has been designed and will be used to measure the profile of the linac beam of BEPCⅡ. This paper describes the prototype of this system and the cause of heat generating of the wire. Some simulation results of the heat and force by using finite element method software—ANSYS^®,2) are presented and discussed.     

两模腔场谱间的量子干涉

研究了高Q腔中单个二能级原子与两模二项式光场依赖强度耦合相互作用系统的腔场谱,给出了弱初始场条件下的数值结果,讨论了两模光场之间的量子干涉对腔场谱结构的影响. 发现当两模光场的频率差Δ>g（g为原子与腔场间的耦合常数）时,两模光场间的干涉效应对谱结构没有影响,系统的腔肠谱只是两模腔肠谱的简单叠加;当Δ≤g时两模腔场谱间的干涉比较明显. 在强初始场条件下,量子干涉效应可忽略. 关键词： 腔场谱 量子干涉 两模二项式光场     

Design study of an FEL oscillator with a waveguide

We present a design study of a free electron laser （FEL） oscillator for high power THz source experiments on the basis of the Shanghai femtosecond accelerator device. A circular groove guide is used as a new interaction structure. Plane metal meshes are used as upstream and downstream mirrors of the resonator. The general design parameters are presented. We analyzed the spontaneous emission and stimulated emission in the oscillator using these parameters.