银、镧改性混合型吸热碳氢燃料裂解分子筛催化剂的研究

为提高吸热型碳氢燃料的吸热能效,制备了吸热型碳氢燃料NNJ-150和银、镧 离子交换改性USY,ZSM-5分子筛及混合分子筛,考察了NNJ-150在USHY,HZSM-5和 二者混合物以及银、镧改性混合分子筛催化剂上的裂解情况。结果表明,NNJ-150 在Ag-LaUSY + Ag-LaZSM-5（75：25）混合分子筛上裂解时,低碳烯烃选择性较高 （600 ℃,47.92%）,催化剂寿命较长(35 min以上）,催化性能比较稳定,可满 足冷却高超音速飞行器的要求。     

压电胰岛素-C肽微阵列免疫传感器研究

以AT切型、基频10MHz的镀金膜石英晶体作为换能器,将抗人胰岛素和C肽单克隆抗体固定在石英晶体电极表面,用2×5检测池固定夹具构建一种新型压电胰岛素-C肽微阵列免疫传感器.研究了抗体固定方法、抗体工作浓度、固定量、一致性以及传感器的响应参数如检测温度、时间和特异性等的影响.该微阵列传感器在胰岛素浓度为2.5～160.0mIU/L、C肽浓度为0.375～12.0ng/mL范围内响应特性良好,压电晶体频率偏移值与胰岛素和C肽浓度呈良好的线性关系.将此微阵列传感器用于人血清标本的测定,结果与放射免疫法符合(r为0.92和0.94).此微阵列传感器具有灵敏度高、特异性好,低密度阵列结构,检测通量较高,不需标记,操作简单、能实时在线检测和重复使用等优点,能用于临床实验诊断,具有临床推广应用价值.     

A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.     

Enhanced nonlinear optical absorption of Au/SiO2 nano-composite thin films

Nano metal-particle dispersed glasses are the attractive candidates for nonlinear optical material applications.Au/SiO 2 nano-composite thin films with 3 vol% to 65 vol% Au are prepared by inductively coupled plasma sputtering.Au particles as perfect spheres with diameters between 10 nm and 30 nm are uniformly dispersed in the SiO 2 matrix.Optical absorption peaks due to the surface plasmon resonance of Au particles are observed.The absorption property is enhanced with the increase of Au content,showing a maximum value in the films with 37 vol% Au.The absorption curves of the Au/SiO 2 thin films with 3 vol% to 37 vol% Au accord well with the theoretical optical absorption spectra obtained from Mie resonance theory.Increasing Au content over 37 vol% results in the partial connection of Au particles,whereby the intensity of the absorption peak is weakened and ultimately replaced by the optical absorption of the bulk.The band gap decreases with Au content increasing from 3 vol% to 37 vol % but increases as Au content further increases.     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

低温等离子体对材料的表面改性

 冷等离子体对材料的表面改性,通过放电等离子体来优化材料的表面结构,是一种非常先进的材料表面改性方法。冷等离子体的特殊性能可以对金属、半导体、高分子等材料进行表面改性,该技术已广泛应用于电子、机械、纺织等工程领域。等离子体是“物质的第四态”,它是由许多可流动的带电粒子组成的体系。等离子体的状态主要取决于它的化学成分、粒子密度和粒子温度等物理化学参量,其中粒子的密度和温度是等离子体的两个最基本参量。实验室中采用气体放电方式产生的等离子体主要由电子、离子、中性粒子或粒子团组成。     

Adaptive synchronization of chaos in permanent magnet synchronous motors based on passivity theory

An adaptive synchronization control method is proposed for chaotic permanent magnet synchronous motors based on the property of a passive system. We prove that the controller makes the synchronization error system between the driving and the response systems not only passive but also asymptotically stable. The simulation results show that the proposed method is effective and robust against uncertainties in the systemic parameters.     

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor

This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage(BV) for an ultra-high-voltage(UHV) high-side thin layer silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state(on-state) BV of the SOI p-channel LDMOS can reach 741(620) V in the 3-μm-thick buried oxide layer,50-μm-length drift region,and at 400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit.     

Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer

We report an effective method to improve the formation of nickel stanogermanide(Ni Ge Sn) by the incorporation of a platinum(Pt) interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.     

星系晕较重r-过程元素产量和丰度的离散

采用Fields等所提出的模型,将超新星爆发产生r过程元素的事件分为2类:A类(r-rich)事件和B类(r-poor)事件,结合所得到的Ⅱ型超新星r-过程元素的产量和产区,计算了贫金属星较重r-过程元素的弥散,并与观测进行对比分析,解释早期星系化学演化.得到的主要结论:从星系化学演化角度看,星系r-过程元素主要来源于大质量星,r过程核合成主要产生场所是较高质量的Ⅱ型超新星,质量范围在28M⊙≤M≤35M⊙.利用计算得到的产量及初始质量函数φ(m),确定产生较重r过程元素的Ⅱ型超新星占Ⅱ型超新星总数的比例(大约为4%),计算得到星系晕中Eu,Ba,Ce,La,Nd,Pr,Sm等元素的丰度离散情况;并对计算结果进行分析.