基于散射实验极化靶的2.5T/1.3K的动态核极化(DNP)系统的开发

动态核极化法(Dynamic Nuclear Polarization, DNP)是利用热平衡下的电子在磁场中的高自旋极化率转移到原子核自旋的技术,从而极大的提高原子核自旋极化率。多种动态极化靶材料已广泛的用于自旋物理散射实验。本文介绍一种简单实用,共同开发的日本山形大学DNP系统,包括超导磁场,氦4蒸发恒冷器,微波系统以及NMR核磁共振检测系统,测得中子靶材料氘带丁醇(D-butanol)中氘核的极化率在2.5T/1.3K达到+6.5%。     

原子系统中偶极-偶极相互作用对量子存储支撑熵不确定度的调控研究

本文研究了Markovian过程和non-Markovian过程两种情况下,原子系统中偶极-偶极(D-D)相互作用和失谐量对两原子系统量子存储支撑(QMA)熵不确定度的调控作用.与Markovian过程相比,在non-Markovian过程中,由于库环境的记忆效应使得具有D-D相互作用的两原子系统QMA熵不确定度的演化行为呈现出振荡上升现象,且熵不确定度的上升趋势得到减缓,从而抑制了由系统量子噪声引起的退相干效应.此外,D-D相互作用对两原子系统QMA熵不确定度具有显著的调控能力,且D-D相互作用比失谐量的调控能力更强.     

50~250 keV质子入射SiC和Si靶时的电子发射特性研究

在中国科学院近代物理研究所兰州重离子加速器国家实验室测量了能量范围为50~250 keV 的质子入射碳化硅靶和硅靶表面的电子发射产额。实验结果发现,两种半导体靶材的电子发射产额随质子入射能量变化趋势均与作用过程中电子能损随质子入射能量的变化趋势相似。通过分析电子发射的能量来源,发现实验中电子发射产额主要由动能电子发射产额贡献,势能电子发射产额可以忽略不计。两种靶材的电子发射产额均近似地正比于质子入射靶材过程中的电子能损,比例系数B随入射能量略有变化。     

Application of spectroscopic imaging in epilepsy

Functional and anatomical neuroimaging has had a dramatic effect on the evaluation of patients for seizure surgery. The demonstration by PET that the epileptogenic focus has interictal metabolic abnormalities has allowed a greater number of patients to come to seizure surgery, with fewer of these patients requiring intracranial electrode evaluations. Metabolic changes have also been demonstrated utilizing single voxel and whole brain ¹H and ³¹P MRS imaging techniques with the interictal focus characterized by increased Pi, pH, and decreased PME and NAA. These findings can be used to accurately lateralize temporal lobe as well as frontal lobe epilepsy. Furthermore, there is evidence that these findings can be used to localize the seizure focus with the changes specific for the epileptogenic region; although, more diffuse changes both ipsilaterally and contralaterally have been seen. In patients with anterior hippocampal seizure foci the pH is significantly alkaline only in the ipsilateral hippocampus, whereas the increased Pi and decreased PME can be seen throughout the ipsilateral temporal lobe. When compared to controls the contralateral hemisphere is acidotic. Decreased NAA concentrations as well as NAA/Cr ratios have been demonstrated in the epileptogenic region in temporal and frontal lobe epilepsy. The decreased NAA has been correlated with the severity of cell loss, and may be a more sensitive measure than qualitative or quantitative measures of the hippocampal atrophy; however, the NAA decrease is more widespread than just the epileptogenic focus but may be maximal at the site of seizure initiation. In preliminary work, NAA maps of deviation from normality have suggested the maximal change to coincide with the epileptogenic region. These results suggest that in focal epilepsy there is abnormal metabolic activity throughout the brain detectable by MRS, with patterns of metabolic asymmetry that are useful for seizure localization.     

Effect of H impurity on misfit dislocation in Ni-based single-crystal superalloy： molecular dynamic simulations

The effect of H impurity on the misfit dislocation in Ni-based single-crystal superalloy is investigated using the molecular dynamic simulation.It includes the site preferences of H impurity in single crystals Ni and Ni 3 Al,the interaction between H impurity and the misfit dislocation and the effect of H impurity on the moving misfit dislocation.The calculated energies and simulation results show that the misfit dislocation attracts H impurity which is located at the γ/γˊinterface and Ni₃ Al and H impurity on the glide plane can obstruct the glide of misfit dislocation,which is beneficial to improving the mechanical properties of Ni based superalloys.     

双轴应变条件下单层MoSe2电子结构和拉曼光谱的第一性原理计算

二硒化钼的层间相互作用强,单层结构具有更低的带隙和更好的稳定性.由于独特的光学性质和优异的电学性能受到研究人员的广泛关注.本文基于密度泛函理论的第一原理,计算和分析了在双轴拉伸压缩应变条件下单层MoSe₂能带结构,拉曼光谱和声子谱的变化规律以及性质产生的原因.在拉伸压缩应变作用下,直接带隙转变为间接带隙.当拉伸应变达到12%时,材料发生半导体-金属相变.当压缩应变达到6%时,声子谱中开始出现虚频率,表明结构开始变得不稳定.     

增生性疤痕组织与正常上皮组织FTIR光谱研究

通过对40例疤痕组织和正常皮肤组织的ETIR光谱比较分析发现,由于个体差异,其光谱均可分为三种不同类型。此外,疤痕组织中的胶原、蛋白质、核酸和脂类等生物大分子的吸收峰强度均在不同程度上高于正常皮肤组织,但两者的A_(1083)/A_(1548)并无明显差异。提示疤痕组织中的细胞仍属正常生长,治疗中不应损伤。     

Brightness Temperature Emitted by Radiometer Calibration Load at Millimeter Wave Band

In this paper, the DVRT (vector radiative transfer theory of densely distributed random discrete scatters) model to calculate the brightness temperature emitted by radiometer calibration load is presented. It takes the multiple scattering of isolation layer into account, which is neglected by the incoherent homogeneous model often used in calibration. Hence, it works much better than incoherent homogeneous model at millimeter wave band. Furthermore, the iteration of DVRT model is presented, and it proves that the incoherent homogeneous model is just the zero-order solution of DVRT model. Some numerical results are provided in the end.     

β-榄香烯振动光谱的量子化学从头计算

利用G98及GAMESS从头计算程序的RHF／6－31方法,对β－榄香烯的全部振动基频作了计算,并与实测红外光谱做了对比,归属了它们的振动模式,讨论了它们的特征基频,并对理论计算的振动频率进行了标度校正。     

0.18μm工艺下p-n结电荷收集的三维TCAD模拟

采用三维TCAD模拟的手段,针对0.18μm工艺下的真实p-n结,研究了偏压、温度、衬底掺杂浓度和LET对辐射诱导的SET电流脉冲的影响. 研究结果表明,在1.62～1.98V的范围内,偏压对电流脉冲的形状有明显影响,而对2ns内的电荷收集总量几乎没有影响;电流脉冲峰值和2ns内的电荷收集总量均随着温度的增加而降低,但温度对电流脉冲峰值的影响更大,而对电荷收集总量的影响相对较小;在典型的现代工艺条件下,衬底掺杂浓度的起伏对单粒子加固性能的影响基本可以忽略;电流脉冲的峰值和电荷收集量二者均随着LET的增加而增加.