A CLASS OF r-POINT (r+1)ST-ORDER A-STABLE ONE-BLOCK METHODS WITH DAMPING AT THE INFINITE POINT

1　ＩｎｔｒｏｄｕｃｔｉｏｎＦｏｒｓｏｌｖｉｎｇｓｔｉｆｆｉｎｉｔｉａｌｖａｌｕｅｐｒｏｂｌｅｍｓｆｏｒｓｙｓｔｅｍｓｏｆＯＤＥｓｙ′=ｆ(ｙ) ,ｙ(ｔ0 ) =ｙ0 ,ｔ0 <ｔ≤Ｔ ,ｙ0 ,ｙ∈Ｒｍ,ｆ :Ω Ｒｍ →Ｒｍ (1 .1 )ｍａｎｙｐａｒｔｉｃｕｌａｒｏｎｅ ｂｌｏｃｋｍｅｔｈｏｄｓｏｆｔｈｅｆｏｒｍＹｎ+1= ＡＹｎ+ｈ( Ｂ0 Ｆ(Ｙｎ) + Ｂ1Ｆ(Ｙｎ+1) ) , Ａ =Ａ Ｉｍ, Ｂｉ=Ｂｉ Ｉｍ,Ａ ,Ｂｉ∈Ｒｒ×ｒ,Ｙｎ =(ＹＴｎｒ,… ,ｙＴ(ｎ+1)ｒ- 1) Ｔ,Ｆ(Ｙｎ) =(ｆＴ(ｙｎｒ) ,… ,ｆＴ(ｙ(ｎ+1)ｒ- 1) ) Ｔ,ｙｊ≈ ｙ(ｔｊ) ,…     

纳米4-H碳化硅薄膜的掺杂现象

对纳米晶SiC薄膜进行了P和B的掺杂,B掺杂效率比P高,其暗电导预前因子与激活能遵守Meyer-Neldel规则,并有反转Meyer-Neldel规则出现.掺杂效率比非晶态碳化硅薄膜高是纳米碳化硅薄膜的特点之一.非晶态中的隧穿和边界透射对输运有一定贡献.     

进一步改进边界元方法以克服振动声辐射计算中解的非唯一性

章利用基于三次B样条插值的边界元方法，对振动体外部声辐射问题进行了研究，对CHIEF法及其改进方法作了进一步的改进，提出在加权余量意义下，通过把内部Helmholtz积分方程与其对内点坐标取导后的方程式作线性叠加，在域外构作的一个小体积块上进行积分以形成补充方程，经与表面Helmholtz积分方程相结合，来求解任意频率下的声辐射问题，并以脉动球和摆动球作为算例，说明本提出的方法能够有效地克服在特殊频率处解的非唯一性问题。     

Account of Thermal Flow Through Metal-Semimetal BiSb Contact Boundary for Determination of EHF Detector Volt-Watt Sensitivity

Bismuth, antimony and its alloys are the typical representatives of a class of semimetals, which electric conductance is lower in 10²-10³ times, than of usual well conducting an electrical current metals. The alloys bismuth with antimony have semi-conductor properties in wide area of compositions at temperatures below 77 °K. The semimetals are rather perspective materials from the point of view of their probable application in various devices [1,2,3].In present time the semimetal alloys BiSb have wide application in thermoelectric generators and refrigerators. In work [3] the opportunity of use of semimetals BiSb with percentage content of Bi and Sb from 8 % up to 25 % was shown as high-sensitivity and of small inertion indicators of the mm range radiation where thermoelectric effect is used. The principle of action of such indicators is based on occurrence of temperature gradient in a semimetal crystal BiSb that has two contacts of the various area with flowing electrical current. Basic element of such device is the dot contact metal - semimetal. One of the main characteristics is volt-watt sensitivity of metal-semimetal BiSb contact which calculating is shown in present work.     

关于仿紧空间的原象

本文利用ασ仿紧子集的概念,给出了在正则空间条件下,仿紧空间在连续闭映射下的原象是仿紧空间的一个充分条件．这一结果,统一推广了高国士教授与陈必胜教授在两篇论文中的结果．     

关于广义四元数代数上矩阵的迹的一个等式

众所周知,相似矩阵的迹相等对于非交换代数和环上的矩阵不一定成立,有趣的问题是给定一个条件使得相似矩阵的迹相等对于非交换代数或非交换环上的矩阵成立。本文对于特征不是2的任意域F上定义的广义四元数代数上的两个矩阵A和B,给出如果A和B相似并且它们的主对角线上的元素在F中,那么它们的迹相等。     

溶胶-凝胶VO2薄膜转换特性研究

利用溶胶凝胶法在SiO2Si衬底上沉积高取向的V2O5薄膜,在压强低于2Pa,温度高于400℃的条件下,对V2O5薄膜进行真空烘烤,获得了电阻率变化3个数量级以上、弛豫宽度为62℃的VO2多晶薄膜.以X射线衍射(XRD)、扫描电子显微镜(SEM)图和电阻率转换特性等实验结果为依据,详细分析了溶胶凝胶薄膜在真空烘烤时从V2O5向VO2的转化,它经历了从VnO2n+1(n=2,3,4,6)到VO2的过程.实验证明,根据选择合适的成膜热处理条件和真空烘烤条件是实现溶胶凝胶V2O5结构向VO2结构成功转换的关键 关键词： 溶胶-凝胶法 氧化钒薄膜 VO2膜转换特性     

Effects of stenosis on arterial rheology through a mathematical model

The paper presents an analytical study of blood flow through a stenosed artery using a suitable mathematical model. The artery is modelled as an anisotropic viscoelastic cylindrical tube containing a non-Newtonian viscous incompressible fluid representing blood. The blood flow is assumed to be characterized by the Herschel–Bulkley model. The effect of the surrounding connective tissues on the motion of the arterial wall has been incorporated. Initially, the relevant solutions of the boundary value problem are obtained in the Laplace transform space, through the use of a suitable finite difference technique. Laplace inversion is carried out by employing suitable numerical techniques. Finally, the variations of the vascular wall displacements, the velocity distribution of the blood flow, the flux, the resistance to flow and the wall shear stress in the stenotic region are quantified through numerical computations and presented graphically.     

Prompt gamma cold neutron activation analysis applied to biological materials

Summary Cold neutrons at the external neutron guide laboratory (ELLA) of the KFA Jülich are used to demonstrate their profitable application for multielement characterization of biological materials. The set-up and experimental conditions of the Prompt Gamma Cold Neutron Activation Analysis (PGCNAA) device is described in detail. Results for C, H, N, S, K, B, and Cd using synthetic standards and the “ratio” technique for calculation are reported for several reference materials and prove the method to be reliable and complementary with respect to the elements being determined by INAA. IAEA fellow at the KFA from 6. 3. 91 to 2. 9. 91 on contract No. VIE/9016R.     

化学镀镍合金在电子工业中的应用

对化学镀镍合金铁工艺和性能特性及其在电子工业中的应有委展现状作了评述。化学镀镍合金具有镀层均匀，适用基材广，结合力高，硬度高，优良的耐磨、耐蚀性，可焊性好和特殊的电磁性能等特性，在电子工业中获得了广泛的应用。文中着重介绍了化学镀镍合金在磁盘、电磁屏蔽、微电路、半导体、连接器及薄膜电阻上的应用情况。这些案例说明，合理应用化学镀镍合金技术，有利于提高电子元器件的质量，降低成本，促进技术进步。