Three-Way Decision Models Based on Ideal Relations in Multi-Attribute Decision-Making

In recent years, research on applications of three-way decision (e.g., TWD) has attracted the attention of many scholars. In this paper, we combine TWD with multi-attribute decision-making (MADM). First, we utilize the essential idea of TOPSIS in MADM theory to propose a pair of new ideal relation models based on TWD, namely, the three-way ideal superiority model and the three-way ideal inferiority model. Second, in order to reduce errors caused by the subjectivity of decision-makers, we develop two new methods to calculate the state sets for the two proposed ideal relation models. Third, we employ aggregate relative loss functions to calculate the thresholds of each object, divide all objects into three different territories and sort all objects. Then, we use a concrete example of building appearance selection to verify the rationality and feasibility of our proposed models. Furthermore, we apply comparative analysis, Spearman’s rank correlation analysis and experiment analysis to illustrate the consistency and superiority of our methods.     

基于单片机的Chebyshev神经网络硬件设计

介绍了Ｃｈｅｂｙｓｈｅｖ神经网络简洁拓扑结构及逼近任意非线性映射的优异特性,并提出了一种神经网络硬件设计方法。     

液晶红外传感器系统

液晶红外传感器系统包括液晶斩波器,驱动电路、液晶聚合物热电元件、探测器、放大器和显示器等。液晶斩波器还可应用于温差电堆、热敏电阻测辐射热仪、红外摄象机等。热电液晶聚合物还可用作压电、驻极体、非线性光学元件等。     

ArF准分子激光立方氮化硼薄膜的制备

采用ＡｒＦ准分子脉冲激光沉积方法（ＰＬＤ），以六方氮化硼（ｈ－ＢＮ）作靶在Ｓｉ（１００）衬底上制备氮化硼薄膜。ＸＲＤ及ＦＴＩＲ透射谱测量表明生成的氮化硼薄膜是含有少量六方氮化硼结构的立方氮化硼（Ｃ－ＢＮ）．ＡＥＳ测量表明不同条件下生成的薄膜中Ｎ与Ｂ的相对含量是不同的，最大比例近乎为１：１，薄膜的维氏显微硬度ＨＶ最大值为１５８０ｋｇ／ｍｍ２。     

LPCVD制备二氧化硅薄膜工艺研究

采用TEOS源LPCVD法制备了SiO2薄膜,采用膜厚仪对薄膜的厚度进行测试.通过不同条件下SiO2薄膜的厚度变化,讨论了TEOS源温度、反应压力及反应温度等工艺条件对淀积速率和均匀性的影响.结果表明,在40℃,50 Pa左右,淀积速率随TEOS源温度、反应压力基本呈线性增大.通过多次试验改进,提出了SiO2膜淀积的典...     

特柔软型钢丝铠装复合电缆设计探讨

本文主要探讨特柔软型钢丝铠装复合电缆的设计,根据特殊用户实际应用情况,设计出大拉力、超柔软钢丝铠装电缆,设计过程中不仅考虑电缆所应有的电性能,同时还要考虑电缆高强度抗张情况和应用中处于反复收放状态,而且所设计的电缆还要满足恶劣环境.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

Load optimal design for a primary test stand facility based on a zero-dimensional load model

In order to couple the numerical simulation of a primary test stand driver with an optimal load design, a zero-dimensional wire array load model is designed based on the Saturn load model using PSPICE, which is an upgraded version of the Simulation Program with Integrated Circuit Emphasis (SPICE) designed by the ORCAD Corporation to perform circuit simulations. This paper calculates different load parameters and discusses factors influencing the driving current curve. With appropriate driving current curves chosen, further magneto-hydrodynamic calculations are carried out and discussed to provide the best results for experiments. The suggested optimal load parameters play an important role in experimental load design.     

Design of 20 W fiber-coupled green laser diode by Zemax

We represent a design of a 20 W, fiber-coupled diode laser module based on 26 single emitters at 520 nm. The module can produce more than 20 W output power from a standard fiber with core diameter of 400 μm and numerical aperture (NA) of 0.22. To achieve a 20 W laser beam, the spatial beam combination and polarization beam combination by polarization beam splitter are used to combine output of 26 single emitters into a single beam, and then an aspheric lens is used to couple the combined beam into an optical fiber. The simulation shows that the total coupling efficiency is more than 95%.