全文获取类型
收费全文 | 5868篇 |
免费 | 822篇 |
国内免费 | 523篇 |
专业分类
化学 | 3201篇 |
晶体学 | 44篇 |
力学 | 274篇 |
综合类 | 49篇 |
数学 | 433篇 |
物理学 | 1720篇 |
无线电 | 1492篇 |
出版年
2024年 | 27篇 |
2023年 | 199篇 |
2022年 | 187篇 |
2021年 | 245篇 |
2020年 | 266篇 |
2019年 | 191篇 |
2018年 | 171篇 |
2017年 | 162篇 |
2016年 | 248篇 |
2015年 | 215篇 |
2014年 | 304篇 |
2013年 | 349篇 |
2012年 | 476篇 |
2011年 | 439篇 |
2010年 | 331篇 |
2009年 | 356篇 |
2008年 | 356篇 |
2007年 | 333篇 |
2006年 | 342篇 |
2005年 | 252篇 |
2004年 | 175篇 |
2003年 | 143篇 |
2002年 | 145篇 |
2001年 | 122篇 |
2000年 | 129篇 |
1999年 | 140篇 |
1998年 | 119篇 |
1997年 | 121篇 |
1996年 | 92篇 |
1995年 | 117篇 |
1994年 | 99篇 |
1993年 | 63篇 |
1992年 | 76篇 |
1991年 | 63篇 |
1990年 | 52篇 |
1989年 | 31篇 |
1988年 | 19篇 |
1987年 | 18篇 |
1986年 | 14篇 |
1985年 | 12篇 |
1984年 | 6篇 |
1983年 | 3篇 |
1982年 | 2篇 |
1981年 | 1篇 |
1980年 | 1篇 |
1979年 | 1篇 |
排序方式: 共有7213条查询结果,搜索用时 15 毫秒
61.
62.
Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions. 相似文献
63.
Load optimal design for a primary test stand facility based on a zero-dimensional load model 下载免费PDF全文
In order to couple the numerical simulation of a primary test stand driver with an optimal load design, a zero-dimensional wire array load model is designed based on the Saturn load model using PSPICE, which is an upgraded version of the Simulation Program with Integrated Circuit Emphasis (SPICE) designed by the ORCAD Corporation to perform circuit simulations. This paper calculates different load parameters and discusses factors influencing the driving current curve. With appropriate driving current curves chosen, further magneto-hydrodynamic calculations are carried out and discussed to provide the best results for experiments. The suggested optimal load parameters play an important role in experimental load design. 相似文献
64.
We represent a design of a 20 W, fiber-coupled diode laser module based on 26 single emitters at 520 nm. The module can produce more than 20 W output power from a standard fiber with core diameter of 400 μm and numerical aperture (NA) of 0.22. To achieve a 20 W laser beam, the spatial beam combination and polarization beam combination by polarization beam splitter are used to combine output of 26 single emitters into a single beam, and then an aspheric lens is used to couple the combined beam into an optical fiber. The simulation shows that the total coupling efficiency is more than 95%. 相似文献
65.
非即变相位共轭反馈对半导体激光器动态特性的影响 总被引:2,自引:1,他引:2
从四波混频产生相位共轭的物理原因出发,定义了相位共轭镜(PCM)的响应时间.建立起非即变相位共轭反馈条件下半导体激光器的外腔模型。以响应时间及频率失调为参变量,对其分岔及噪声等动态行为进行数值分析。结果表明,不考虑噪声影响时,增加相位共轭镜响应时间会使混沌带出现的次数和范围得到较大的抑制,当响应时间增大到1.5ns时,混沌带消失,半导体激光器保持稳定的单周期状态;考虑噪声影响后,随若响应时间的相对强度噪声(RIN)可减小几dB甚至十几dB,产生突变需要的反馈量也增大一个数量级以上,且其频谱的峰值向高频方向移动;另外,由于共轭反馈引起的频率失调低于半导体激光器激射频率3个数量级以上.它只对分岔特性有影响.对相对强度噪声的影响几乎为零。 相似文献
66.
The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature.We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current,and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode.We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode.Our results support the double dipolar model for the explanation of the negative electron affinity effect. 相似文献
67.
在超声快速制取组织细胞病理切片的过程中,发现激励信号对切片制取效果有明显的影响.为了掌握超声激励信号对组织细胞的影响规律,达到快速制取病理切片的最佳状态,从气泡空化模型入手,通过改变激励信号频率、声压、气泡初始半径和液体黏滞系数等参量,研究了声孔效应中气泡动力学激励机制.数值计算表明:空化泡振动随激励声压增强而升高,随液体黏滞系数增强而减弱;一定频率范围内空化泡振动能保持在膨胀、收缩和振荡的稳定空化状态,存在空化泡稳态振动的最佳激励频率;一定初始半径能保证空化泡产生稳定的振动,存在空化泡稳态振动幅度最大的初始半径.实际操作中,在频率、声压、初始半径和黏滞系数综合作用的若干空化阈内,声孔效应使超声快速法制取细胞组织切片获得最佳效果.
关键词:
声孔效应
超声空化
气泡振动
稳态空化域 相似文献
68.
Eleven triazolyl substituted tetrahydrobenzofuran derivatives were synthesized in high yields as novel H+/K+‐ATPase inhibitor via one‐pot CuI‐catalyzed three‐component click reaction of azide, secondary amine and 3‐bromopropyne under mild conditions in water. Their structures were characterized by NMR, IR, ESI‐MS, elemental analysis and single‐crystal X‐ray diffraction analysis. Most of the target compounds exhibited better H+/K+‐ATPase inhibitory activity than commercial omeprazole with IC50 values less than 15 µmol·L?1. The initial structure‐activity analysis suggested that the triazole substituted by cycloalkyl, aromatic ring or O‐containing side‐chain seemed to be beneficial for enhancing the activity. 相似文献
69.
70.
Yunfeng Bao Hai Zou Nengcong Yang Gao Li Fuxiang Zhang 《Journal of Energy Chemistry》2021,(12):358-363
Perovskite BaTaO2N (BTON) is one of the most promising photocatalysts for solar water splitting due to its wide visible-light absorption and suitable conduction... 相似文献