小孔矩形腔体屏蔽特性的研究

本文提出了有孔腔体远、近场电磁屏蔽效能的计算方法，体研究了矩形腔体的屏蔽特性，讨论了各类孔对屏蔽能的影响程度。数值结果表明，理论计算与实验数据吻合较好。     

同轴型光电器件的研究开发

本文简要地介绍了武汉电信器件公司正在研究开发的同轴型光电器件，新的器件的工艺与结构特点以及主要技术指标、使用前景。     

羰基铁类随机混合吸波材料等效电磁参数的计算

本文为计及多重散射偶极子间的相互作用，引入参量εｈ和μｈ，导得一组公式。它不仅能计算铁氧体类也能计算羰基铁类的随机混合吸波材料的等效电磁参数，均与实验结果吻合良好。     

Fabrication of Micro -Optical Devices by a Femtosecond Laser

Femtosecond laser is a perfect laser source for materials processing when high accuracy and small structure size are required. Due to the ultra short interaction time and the high peak power, the process is generally characterized by the absence of heat diffusion and, consequently molten layers. Various induced structures have been observed in materials after the femtosecond laser irradiation. Here, we report on fabrication of micro-optical devices by the femtosecond laser. 1) formation of optical waveguide with internal loss less than 0.5dB/cm in the wavelength region from 1.2 to 1.6 mm, by translating a silica glass perpendicular to the axis of the focused femtosecond laser beam; 2) nano-scale valence state manipulation of active ions inside transparent materials; 3) space-selective precipitation and control of metal nanoparticles inside transparent materials; The mechanisms and applications of the femtosecond laser induced phenomena were also discussed.     

变In组分沟道的MM-HEMT材料电子输运特性研究

在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用.通过低温下二维电子气横向电阻的量子振荡现象，结合变温度的Hall测量，系统研究了不同In组分沟道MM_HEMT器件中子带电子迁移率和浓度随温度的变化关系.结果表明，沟道中In组分为0.65的样品，材料电学性能最好，In组分高于0.65的样品，严重的晶格失配将产生位错，引起迁移率下降，大大影响材料和器件的性能. 关键词： 变缓冲层高迁移率晶体管 Shubnikov_de Hass 振荡     

超短强激光脉冲在等离子体隧道中传输的理论与数值模拟研究

研究了超短强激光脉冲在非扰动抛物型部分电离的预等离子体隧道中的传输特性.从Maxwell方程出发得到了两个包含衍射、三阶强度非线性、等离子体散焦、等离子体隧道聚焦以及相对论自聚焦等效应在内的激光场演化方程，即折射率方程和哈密顿-雅可比方程.在此基础 上得到了激光在等离子体隧道中传输的包络方程以及光斑半径与传输距离、隧道宽度等初始 参量的关系. 关键词： 等离子体隧道聚焦 相对论自聚焦 势阱     

Photonic crystals--a step towards integrated circuits for photonics.

The field of photonic crystals has, over the past few years, received dramatically increased attention. Photonic crystals are artificially engineered structures that exhibit a periodic variation in one, two, or three dimensions of the dielectric constant, with a period of the order of the pertinent light wavelength. Such structures in three dimensions should exhibit properties similar to solid-state electronic crystals, such as bandgaps, in other words wavelength regions where light cannot propagate in any direction. By introducing defects into the periodic arrangement, the photonic crystals exhibit properties analogous to those of solid-state crystals. The basic feature of a photonic bandgap was indeed experimentally demonstrated in the beginning of the 1990s, and sparked a large interest in, and in many ways revitalized, photonics research. There are several reasons for this attention. One is that photonic crystals, in their own right, offer a proliferation of challenging research tasks, involving a multitude of disciplines, such as electromagnetic theory, nanofabrication, semi-conductor technology, materials science, biotechnology, to name a few. Another reason is given by the somewhat more down-to-earth expectations that photonics crystals will create unique opportunities for novel devices and applications, and contribute to solving some of the issues that have plagued photonics such as large physical sizes, comparatively low functionality, and high costs. Herein, we will treat some basics of photonic crystal structures and discuss the state-of-the-art in fabrication as well give some examples of devices with unique properties, due to the use of photonic crystals. We will also point out some of the problems that still remain to be solved, and give a view on where photonic crystals currently stand.     

Effect of Ultrashort Pulsed Laser and X-Ray Irradiation on Au+ -Doped Glass

Au nanoparticles were precipitated inside Au+-doped glass samples after irradiation by femtosecond laser or x-ray. Femtosecond laser and X-ray irradiation result in decreasing of anneal temperature and critical size for the precipitation of Au nanoparticles.     

A high-resolution burst-mode laser transmitter with fast and accurate level monitoring for 1.25 Gb/s upstream GPONs

An innovative burst-mode laser transmitter (BM-TX) is presented for gigabit-capable passive optical network (GPON) upstream transmission at 1.25 Gb/s. The laser bias and modulation current each can reach 80 mA with a resolution of 0.1 mA providing a total drive current up to 160 mA. Both currents are generated by 10-bit current steering digital-to-analog converters (DACs), the architecture of which is specially adapted to yield a monotonic current setting at settling times below 12.8 ns. Tests show that fast automatic power control (APC) can stabilize and track the launched optical power with a tolerance of less than 1 dB over a wide temperature range for outdoor operation. The APC only requires a straightforward calibration of the "0" and the "1" level at room temperature. Optical level monitoring on strings of four consecutive "0" bytes and two consecutive "1" bytes at 1.25 Gb/s is demonstrated. APC based on such short strings of data has not been shown before. The circuits have been designed in a 0.35 /spl mu/m SiGe BiCMOS process. Experimental results show that this dc-coupled BM-TX meets the specifications of the recently approved ITU-T Recommendation G.984.2 supporting an intelligent power leveling mechanism (PLM).     

铸铝激光熔融处理后的组织与性能

应用光学和电子显微镜及显微硬度计研究了铸造Al-Si合金经激光表面熔融处理后的组织和性能。指出,组织分熔化区、过度区和基体三层。在熔化区中树枝状先共晶α相的平均宽度由原始组织的20～40μm细化到2～3μm,同时共晶组织也被大大细化。这些变化使显微硬度值由67.4提高至109～115.