Voigt线型及其精确快速算法

通过把上半复平面分为４个区，并在每一区利用不同近似，建立了一种精确快速计算Ｖｏｉｇｔ函数、修正的Ｖｏｉｇｔ函数和Ｖｏｉｇｔ函数偏导数的算法，其最大相对误差小于５×１０－４．该算法是Ｌｉｎｅ－ｂｙ－Ｌｉｎｅ大气透过率／辐射强度计算及其相关应用的有效算法．     

高功率激光焊接光致等离子体的检测

系统地归纳了高功率激光焊接过程中光致等离子体的声、光、电、热等四种特征信号，综述了国外在等离子体信号检测方面的试验方法及研究进展，分析了未来的发展趋势     

Analysis method of the effect of fabrication errors on a planar waveguide demultiplexer

The impact of fabrication errors on a planar waveguide demultiplexer is analyzed based on an analytical method. The explicit expression of the transfer function taking into account phase and amplitude errors is presented in order to analyze the loss and crosstalk of the demultiplexer caused by fabrication errors. A basic requirement for the demultiplexer with a certain crosstalk criterion can be easily obtained. Using an etched diffraction grating demultiplexer as an example, it is shown that the analytical results have a good agreement with results from a numerical method.     

Dependence of the neodymium random laser threshold on the diameter of the pumped spot

We experimentally studied the dependence of the threshold energy density E/sub th//S in Nd/sub 0.5/La/sub 0.5/Al/sub 3/(BO/sub 3/)/sub 4/ random laser on the diameter of the pumped spot d and found that at d/spl ges/130/spl mu/m, E/sub th//S is proportional to 1/d+const. This functional dependence is different from the one commonly expected in the case of diffusion, /spl prop/1/d/sup 2/+const. However, the obtained experimental dependence does not mean the failure of the diffusion model. Calculating the mean photon's residence time /spl tau//sub res//sup p/ (which photons, making their diffusion-like random walks, spend inside the gain volume) as the function of d and further assuming that E/sub th//S/spl prop/(/spl tau//sup p//sub res/)/sup -1/, we predicted the experimentally obtained functional dependence, /spl prop/1/d+const. The major difference between our model and that of and was in the boundary conditions.     

Chemical Constituents of Ligusticum sinensis Oliv.

The new phenylpropanoid diglycoside ligusinenoside A ( 1 ), and the two new 8,4′‐oxyneolignan(‘8‐O‐4′‐neolignan’) diglycosides ligusinenosides B ( 2 ) and C ( 3 ), together with nine known compounds, were isolated from the rhizomes of Ligusticum sinensis Oliv. The structures of 1 – 3 were elucidated on the basis of spectroscopic analyses.     

Turbo码中快速交织器的设计

分析了交织器在Ｔｕｒｂｏ码中的重要作用，以及目前交织器存在的缺陷，介绍了一种快速交织器的设计方法。该交织器易于实现，具有交织时延低的突出优点。计算机仿真结果表明，该快速交织器可以获得优异的性能。     

Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.     

用于微波/射频集成电路的一种新型低损耗介质——多孔硅及氧化多孔硅厚膜

提出在单片微波集成电路(MMIC)中用多孔硅/氧化多孔硅厚膜作微波无源器件的低损耗介质膜.研究了厚度为70μm的多孔硅/氧化多孔硅厚膜在低阻硅衬底上的形成,这层厚膜增加了衬底的电阻率,减少了微波的有效介质损耗.通过测量在低阻硅衬底上形成的氧化多孔硅厚膜上的共平面波导的微波特性,证明了在低阻硅衬底上用厚膜氧化多孔硅可以提高共平面传输线(CPW)的微波特性.