自动送粉激光熔覆装置及工艺研究

研制了一种工作稳定性好、粉末流量连续可调的自动送粉装置。经A_3钢表面激光熔覆WF-150不锈钢合金粉末的研究表明,所获得的激光熔覆层均匀连续、无宏观气孔和裂纹,粉末利用率高达94％。     

基于IFS分形理论的信源编码技术的研究

本文首次系统地研究了基于ＩＦＳ分形理论的信源压缩编码与传统方法的关系。     

Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs

We outlined a simple model to account for the surface roughness (SR)-induced enhanced threshold voltage (V/sub TH/) shifts that were recently observed in ultrathin-body MOSFETs fabricated on <100> Si surface. The phenomena of enhanced V/sub TH/ shifts can be modeled by accounting for the fluctuation of quantization energy in the ultrathin body (UTB) MOSFETs due to SR up to a second-order approximation. Our model is then used to examine the enhanced V/sub TH/ shift phenomena in other novel surface orientations for Si and Ge and its impact on gate workfunction design. We also performed a calculation of the SR-limited hole mobility (/spl mu//sub H,SR/) of p-MOSFETs with an ultrathin Si and Ge active layer thickness, T/sub Body/<10 nm. Calculation of the electronic band structures is done within the effective mass framework via the Luttinger Kohn Hamiltonian, and the mobility is calculated using an isotropic approximation for the relaxation time calculation, while retaining the full anisotropy of the valence subband structure. For both Si and Ge, the dependence of /spl mu//sub H,SR/ on the surface orientation, channel orientation, and T/sub Body/ are explored. It was found that a <110> surface yields the highest /spl mu//sub H,SR/. The increasing quantization mass m/sub z/ for <110> surface renders its /spl mu//sub H,SR/ less susceptible with the decrease of T/sub Body/. In contrast, <100> surface exhibits smallest /spl mu//sub H,SR/ due to its smallest m/sub z/. The SR parameters, i.e. autocorrelation length (L) and root-mean-square (/spl Delta//sub rms/) used in this paper is obtained from the available experimental result of Si<100> UTB MOSFETs, by adjusting these SR parameters to obtain a theoretical fit with experimental data on SR-limited mobility and V/sub TH/ shifts. This set of SR parameters is then employed for all orientations of both Si and Ge devices.     

色散补偿技术在通信传输系统中的应用

本文介绍了色散补偿现象对光信号在传输过程中的影响,并结合中国网通长途传输网工程,提出了解决色散问题的具体措施及建议.     

电流卡钳传输阻抗的线性补偿

为了扩展电流卡钳的频率测试范围,根据其等效电路模型,分析并测试了传输阻抗特性,发现了传输阻抗在频率范围内的非线性现象,进而提出了基于放大器的线性补偿方法.通过测试结果表明,在1-50kHz的被测信号情况下,匹配了放大器的电流探头的传输阻抗的波动范围≤±1dB.因而,利用这一补偿方法,可以给单片机信号采集转换成被测电流值带来方便.     

RAPID CODEBOOK SEARCH ALGORITHM FOR SAR RAW DATA COMPRESSION

This paper presents a simple but eifective algorithm to speed up the codebook search in a vector quantization scheme of SAR raw data when a minimum square error(MSE) criterion is used. A considerable reduction in the number of operations is achieved.     

钨硅化物砷化镓Schottky接触的形成和特性

本文报道了钨硅化物-砷化镓Schottky接触的形成过程和电学特性.实验表明,WSi_x/GaAs Schottky接触具有优越的I-V特性,势垒高度保持在0.8V,理想性因子实际上保持在1,并具有高温稳定性.研究表明,除了硅化物的成份,表面处理工艺和硅化物淀积技术也将对Schottky接触的I-V特性和热稳定性产生强烈的影响.本文提出利用对GaAs衬底的溅射腐蚀和在淀积过程中加以负的衬底偏置能显著地改进金属层与衬底的粘附性.     

激光表面熔铸钴基合金涂层耐磨性的研究

研究了GH33高温合金表面激光熔铸钴基合金涂层对耐磨性的影响。磨损试验表明，熔铸层耐磨性较基体金属提高3倍以上，借助SEM、EMPA、X射线衍射等手段对复合涂层磨损机理进行了探讨。     

Structural Investigation of the Interaction Mechanism between Chlorogenic Acid and AMPA Receptor via In Silico Approaches

Chlorogenic acid (CGA), an important metabolite in natural plant medicines such as honeysuckle and eucommia, has been shown to have potent antinociceptive effects. Nevertheless, the mechanism by which CGA relieves chronic pain remains unclear. α-amino-3-hydroxy-5-methyl-4-isooxazolpropionic acid receptor (AMPAR) is a major ionotropic glutamate receptor that mediates rapid excitatory synaptic transmission and its glutamate ionotropic receptor AMPA type subunit 1 (GluA1) plays a key role in nociceptive transmission. In this study, we used Western blot, surface plasmon resonance (SPR) assay, and the molecular simulation technologies to investigate the mechanism of interaction between CGA and AMPAR to relieve chronic pain. Our results indicate that the protein expression level of GluA1 showed a dependent decrease as the concentration of CGA increased (0, 50, 100, and 200 μM). The SPR assay demonstrates that CGA can directly bind to GluA1 (K_D = 496 μM). Furthermore, CGA forms a stable binding interaction with GluA1, which is validated by molecular dynamics (MD) simulation. The binding free energy between CGA and GluA1 is −39.803 ± 14.772 kJ/mol, where van der Waals interaction and electrostatic interaction are the major contributors to the GluA1–CGA binding, and the key residues are identified (Val-32, Glu-33, Ala-36, Glu-37, Leu-48), which play a crucial role in the binding interaction. This study first reveals the structural basis of the stable interaction between CGA and GluA1 to form a binding complex for the relief of chronic pain. The research provides the structural basis to understand the treatment of chronic pain and is valuable to the design of novel drug molecules in the future.     

Dynamic Deformation of Frozen Soil at a High Strain Rate:Experiments and Damage-Coupled Constitutive Model

The dynamic compressive deformation of frozen soil was investigated by conduct-ing the split-Hopkinson pressure bar (SHPB) experiments at three temperatures and...