超稳Y沸石制备技术对沸石铝分布的影响 Ⅱ.均匀铝分布的超稳Y沸石的制备

对水热处理后得到的USY沸石作进一步的酸处理以及采用改进的氟硅酸盐溶液骨架富硅工艺,分别得到了经XPS剖面分析证实为铝分布均匀的超稳Y沸石HAY-Ⅰ和HAY-Ⅱ。IR分析表明,在酸处理过程中从USY沸石中去掉的那部分非骨架铝类与3690cm~(-1)处羟基有关,仍残留在HAY-Ⅰ沸石中的那部分非骨架铝类与3670cm~(-1)和3600cm~(-1)处羟基有关。XRD和化学分析表明HAY-Ⅰ沸石仍含有约50％的非骨架铝类,而HAY-Ⅱ沸石则基本上不含非骨架铝类,HAY-Ⅱ沸石还显示更高的结晶保留度。DTA分析表明,HAY-Ⅰ和HAY-Ⅱ两种沸石的热稳定性均高于USY沸石。     

CAD OF MILLIMETER WAVE OSCILLATORS WITH THE FDHB TECHNIQUE

In this paper the modelling, analysis and optimization of millimeter wave oscillatorsare investigated by using the a frequency-domain harmonic balance technique (FDHB), where theexternal-circuit impedances looking outside from the active device are calculated with a combinedtechnique of modes expansion, Galerkin, and collocation methods. The optimization results arein agreement with the experimental ones, which show the reliability of the presented model andoptimization.     

Continuously chirped DFB gratings by specially bent waveguides fortunable lasers

We have implemented and studied a new type of tunable multiple-section semiconductor distributed feedback (DFB) laser using tailored chirped DFB gratings. Arbitrarily and continuously chirped DFB gratings are defined by bent waveguides on homogeneous grating fields with ultrahigh spatial precision. The mathematical bending functions are optimized in this case to provide enlarged wavelength tuning ranges. We present the results of model calculations, the technological device realization and experimental results of the DFB laser characterization e.g. a tuning range of 5.5 nm without wavelength gaps and high side mode suppression ratio     

ATM交换结构的成组输入排队模型

本文提出一种新的ATM交换排队结构——成组输入排队结构(GIQ),其基本思想是将输入端分组,同一组的输入端共享排队缓存。GIQ不仅能提高缓存的利用率和系统的吞吐率(达到96.2％),而且还能大大改善交换结构的抗突发能力。采用计算机仿真模拟的方法,分析了GIQ在均匀连续业务流和突发业务流下的性能,并与其它输入排队结构的性能进行了比较。     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。     

一种新的基于极大似然估计的系统辨识方法

进化计算是一种基于自然选择和自然变异机制的并行随机优化算法。由于递推极大似然估计法难以实现性能指标函数的全局寻优，所以本文提出了将改进的进化计算用于系统参数辨识的方法。计算机仿真结果表明，该算法能够实现似然函数的全局寻优。     

半绝缘砷化镓中碳含量对热稳定性的影响

本文报导了LEC法半绝缘砷化镓单晶中含碳量对SI-GaAs热稳定性的影响。在800℃以上退火,发现当晶体中C含量大于1.5×10~(16)cm~(-3)时,SI-GaAs的热稳定性变差;而C含量小于5×10~(15)cm~(-3)时,通常表现出良好的热稳定性。     

稳态锁模产生4ps激光脉冲

首次利用ＧａＡｓ光电导开关，控制Ｎｄ：ＹＬＦ激光器腔内Ｑ值，实现稳态锁模，获得脉宽和能量稳定性极高的４ｐｓ激光脉冲。     

Scattering parameters of a waveguide cross junction loaded with a metallic post in the center

In this paper, the scattering parameters of a waveguide cross junction loaded with a metallic post in the center are analyzed for the first time by using the Method of Lines. The homogeneous boundary condition of the third kind and curved boundary are introduced in the formulation. Numerical results are in good agreement with the experimental data. The scattering parameters at Ka-band and W-band of the cross junctions loaded with metallic posts of different radii are presented. It is shown from the numerical results that loaded with metallic posts is an effective means for adjusting the network parameters of the waveguide cross junction to satisfy some special requirements in the design of millimeter wave components.     

硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。