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81.
In a twisted nematic liquid crystal cell we report and study the self-transparency effect induced by the creation of an isotropic droplet. A simple theoretical model is presented and good agreement with experimental data is found. In a two beams configuration transistor-like behavior is observed and theoretically discussed. 相似文献
82.
83.
An overview of theoretical and experimental studies of the coherent type-B e
+
e-pair production by photons in aligned crystals performed at Nuclear Physics Institute at Tomsk Polytechnic University is given. 相似文献
84.
85.
本文给出了在Re=50—400范围内二维圆柱后涡脱落的有序和混沌现象的一些初步实验结果。涡脱落由有序到混沌的转捩发生在Re=184.6—193.5之间,但是它不是通过准周期途径。在涡脱落频率与Re数的关系曲线上有两个间断。在Re=70处的间断可能对应于倾斜涡脱落模式的变化,在Re≈193.5处的第二间断对应于由有序到混沌状态的转捩。 相似文献
86.
We analyze diffusion from a periodic array of hemispherical droplets through a membrane. We find that the multiple sources do not interact strongly, even when the droplets are closely spaced, so that the flux through the membrane appears nearly additive. 相似文献
87.
88.
89.
Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century. 相似文献
90.
V. Edon M.C. Hugon B. Agius L. Miotti C. Radtke F. Tatsch J.J. Ganem I. Trimaille I.J.R. Baumvol 《Applied Physics A: Materials Science & Processing》2006,83(2):289-293
The influence of processing parameters on the electrical characteristics of RuO2/LaAlO3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and
gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford
backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in
better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result
is explained by oxygen ability to heal oxygen vacancies in the LaAlO3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime.
PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc 相似文献