共面波导有限金属厚度效应的研究

用保角变换法对共面波导金属厚度效应进行了理论分析，编制了相应的计算机程序，给出了数值解，并对此进行了多元曲线拟合，导出了考虑金属厚度后的形状比k、有效介电常数、特征阻抗、损耗的闭定表达式。用此修正表达式求得特征阻抗及损耗的数值解，并与K．C．格普塔的修正值及实验测量值进行了详细比较，结果表明此修正公式与实验值相符较好。     

反铁磁晶体的红外频率特性

研究了红外频段非线性s偏振表面波在反铁磁晶体和电介质交界面上的频率特性，求出了非线性色散方程，揭示了非线性s偏振表面波存在一个临界频率，低于这个频率，非线性s偏振表面波的频率范围，发现功率不再是决定导波频率范围的唯一因素，两种材料的介电常数比在这里起了至关重要的作用。     

Analysis of the time response of multiconductor transmission lineswith frequency-dependent losses by the method ofconvolution-characteristics

A new method for analysis of the time response of multiconductor transmission lines with frequency-dependent losses is presented. This method can solve the time response of various kinds of transmission lines with arbitrary terminal networks. Particularly, it can analyze nonuniform lines with frequency-dependent losses, for which no effective method for analyzing their time response exists. This method starts from the frequency-domain telegrapher's equations. After decoupling and inversely Fourier transforming, then a set of decoupled time-domain equations including convolutions are given. These equations can be solved with the characteristic method. The results obtained with this method are stable and accurate. Two examples are given to illustrate the application of this method to various multiconductor transmission lines     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

镧系金属一氢化物有效芯势研究

采用Cundari和Stevens等推导的有效芯势对镧系金属一氢化物进行了理论计算，以探讨镧系金属元素与氢的相互作用。结果表明所有镧系金属一氢化物基态时理论上是稳定的，最稳定的是SmH,最不稳定的是DyH;键长计算结果显示，基态时镧系金属一招兵买马花物有独立王国 收缩现象发生；红外振动频率理论计算值与实验结果一致；成键轨道中，金属原子轨道的贡献主要是s轨道和d轨道：从CeH至ErH(GdH)例外）随着外层电子的增加s轨道成分逐渐增大d轨道成分逐渐减小；从TmH和LuH（包括GdH)，成键轨道中金属原子轨道的贡献主要是d轨道，约为90％；约大多数镧系金属一氧化物的成键轨道中金属原子轨道f成分小于1％。     

GMPLS在自动交换光网络控制平面中的应用

自动交换光网络（ASON）由于引入了控制平面才成为智能的光网络，而控制平面的具体实现要依靠通用多协议标记交换（GMPLS）协议。首先讨论ASON中的控制平面，然后对GMPLS和MPLS进行比较；最后对GMPLS在ASON控制平面中的应用进行了具体分析。     

利用新型场效应管(QFET)的正向变换器

介绍了单端正向变换器基本电路，重点叙述带三路调节DC电压的100KHZ180W离线电源。它采用具有低导电阻RDS和低栅极电荷Qg的新型场效应管（QFET）作为变换电路的主开关器件，降低了电源开关损耗并提高了效率3%-5%。     

Co-P非晶态合金电子性质和局域结构的理论研究

根据Co P非晶态合金结构的短程有序和结构中可能存在P -P相互作用的实验事实 ,选择了单磷原子簇模型ConP(n =1～ 5 )和双磷原子簇模型ConP2 (n =1～ 4 ) ,用密度泛函理论方法对其进行计算 .结果表明 ,在单磷Co2 P( 2 ) 、Co3 P( 1) 及Co4P( 2 ) 模型体系中 ,Co原子供给P原子电子 ,与电负性规则一致 ,同时Co和P之间具较强化学作用 ,可以形成稳定的原子簇 ;而在双磷和单磷原子簇Co5P( 1) 模型体系中 ,形成的原子簇不稳定 ,采用单磷Co2 P( 2 ) 、Co3 P( 1) 及Co4P( 2 ) 模型能较好地反映Co P非晶态合金的结构特点 .     

A Generalization of the Mean Size Formula of Wavelet Packets in Lp

The purpose of this paper is to investigate the mean size formula of wavelet packets in Lp for 0 〈 p ≤ ∞. We generalize a mean size formula of wavelet packets given in terms of the p-norm joint spectral radius and we also give some asymptotic formulas for the Lp-norm or quasi-norm on the subdivision trees. All results will be given in the general setting,     

On oriented 2-factorable graphs

Oriented 2-factorable graphs are reduced to bouquets by permutation voltage assignment in this paper. Introducing the concept ofk-class index of a permutation group, various oriented 2-factorable graphs are enumerated in this paper.