Surface State Mediated NIR Two‐Photon Fluorescence of Iron Oxides for Nonlinear Optical Microscopy

The development of fluorescent iron oxide nanomaterials is highly desired for multimodal molecular imaging. Instead of incorporating fluorescent dyes on the surface of iron oxides, a ligand‐assisted synthesis approach is developed to allow near‐infrared (NIR) fluorescence in Fe₃O₄ nanostructures. Using a trimesic acid (TMA)/citrate‐mediated synthesis, fabricated Fe₃O₄ nanostructures can generate a NIR two‐photon florescence (TPF) peak around 700 nm under the excitation by a 1230‐nm femtosecond laser. By tailoring the absorption of Fe₃O₄ nanostructures toward NIR band, the NIR‐TPF efficiency can be greatly increased. Through internal etching, surface peeling, and ligand replacement, spectroscopic results validated that such resonantly enhanced NIR‐TPF is mediated by surface states with strong NIR‐IR absorption. This TPF signal evolution can be generalized to other iron oxide nanomaterials like magnetite nanoparticles and α‐Fe₂O₃ nanoplates. Using the developed fluorescent Fe₃O₄ nanostructures, it is demonstrated that their TPF and third harmonic generation (THG) contrast in the nonlinear optical microscopy of live cells. It is anticipated that the synthesized NIR photofunctional Fe₃O₄ will serve as a versatile platform for dual‐modality magnetic resonance imaging (MRI) as well as a magnet‐guided theranostic agent.     

属性证书的管理与应用

公钥基础设施PKI很好地解决了身份认证问题,但是无法满足权限管理问题,而属性证书(Attribute Certificate)提供了全新的方法来解决细粒化访问控制问题,将PKI框架扩展到了授权领域。本文就当前有关属性证书的标准和相关文献,针对其技术概貌作了一些综述,并介绍了属性证书的应用。     

激光雕刻的数学模型及最优化激光雕刻方法研究

建立了一种激光雕刻的图形学数学模型,在此基础上,提出了最优化激光雕刻方法的理论与算法。该算法经过实践检验,具有良好效果     

具有高清晰度三维图像的模压全息图母版制作技术

从理论上分析了在模压三维全息图母版的记录光路中,为消除或减小像散和像场弯曲以及扩展照明光源产生的像模糊所应采取的参数设置。试验结果表明用此方法制作的模压三维全息图即使在漫射照明光下亦能呈现出清晰、明亮的图像。     

调Q脉冲YAG三波长激光诱导液相沉积Si基Ni-Pd-P纳米膜

使用脉冲三波长Nd：YAG激光实现了室温下半导体硅上化学沉积Ni-Pd-P纳米膜。SEM结果表明,激光诱导化学沉积Ni-Pd－P纳米膜具有良好的选择性。经STM测试发现,由于激光作用,镀层不仅沿表面生长,而且在厚度方向上也不断增厚。极化曲线测试表明,短时间激光诱导沉积的Ni-Pd-P纳米膜具有优异的析氢催化性能。     

高效率非临界相位匹配KTP光学参量振荡器

利用Nd∶YAG激光器1．064μm基频光抽运非临界相位匹配KTP（θ＝90°,＝0°）光学参量振荡器（OPO）,获得1．57μm相干光和高达64％的能量转换效率,分析了非临界相位匹配方式对KTP晶体定离效应和接收角的影响,并对OPO的阈值、效率、输出的光束质量进行了讨论。     

孤子效应脉冲压缩中的三阶色散抑制

提出并通过数值计算证明,若周期性地改变光纤的三阶色散系数,则可有效地抑制三阶色散对色散位移光纤中孤子效应脉冲压缩的影响     

偏心椭圆高斯光束

在椭圆高斯光束横坐标中引入复数偏移量,将其推广为偏心椭圆高斯光束。在垂直于ｚ轴截面内强度分布仍然是椭圆高斯函数分布,在传播方向上光束峰值强度沿直线分布,波前也存在横向位移。对偏心椭圆高斯光束经一阶光学系统的变换关系进行了定量推导。对传播方向偏离ｚ轴的椭圆高斯光束经薄透镜传播时的特例进行了讨论。     

A new synchronous digital hierarchical Bi-directional ring capacity design algorithm based on the shortest-route traffic matrix

In this paper, the concept of the Shortest-Route Traffic Matrix(SRTM) was first presented, and the generalized formula for computing ring capacity requirement in use of SRTM is given. Then, a new capacity design algorithm which is based on SRTM was presented for Synchronous Digital Hierarchical(SDH) Bi-directional Self-Healing Ring (BSHR). The algorithm simulation results demonstrate that this algorithm is very efficient for SDH BSHR capacity design and can make less project investment and make high utilization of lines and equipment. By means of the algorithm in this paper, capacity optimization assignment for SDH Hierarchical Self-Healing Ring (HSHR) and for ATM Virtual Path (VP)-based Self-Healing Ring (SHR) is also discussed.     

Resolving Deep Sub-Wavelength Scattering of Nanoscale Sidewalls Using Parametric Microscopy

The quantitative optical measurement of deep sub-wavelength features with sub-nanometer sensitivity addresses the measurement challenge in the semiconductor fabrication process. Optical scatterings from the sidewalls of patterned devices reveal abundant structural and material information. We demonstrated a parametric indirect microscopic imaging (PIMI) technique that enables recovery of the profile of wavelength-scale objects with deep sub-wavelength resolution, based on measuring and filtering the variations of far-field scattering intensities when the illumination was modulated. The finite-difference time-domain (FDTD) numerical simulation was performed, and the experimental results were compared with atomic force microscopic (AFM) images to verify the resolution improvement achieved with PIMI. This work may provide a new approach to exploring the detailed structure and material properties of sidewalls and edges in semiconductor-patterned devices with enhanced contrast and resolution, compared with using the conventional optical microscopy, while retaining its advantage of a wide field of view and relatively low cost.