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21.
Kun-Wah Yip Tung-Sang Ng 《Communications Letters, IEEE》2003,7(2):58-60
This letter analyzes Bluetooth's power-control algorithm with a goal to study the mean transmit power required in the presence of lognormal shadowing. The following results are found. 1) A smaller power-control step size yields a lower mean transmit power. 2) When the standard deviations of lognormal shadowing are 3 and 6 dB, respectively, a Bluetooth device needs to consume 11.1 dB and 15.0 dB more in the transmit energy than the minimum one required in the absence of shadowing. 3) The transmit energy consumption varies by around 6 dB among Bluetooth devices as a result of the /spl plusmn/6 dB tolerance in the golden receive power range, which has a nominal size of 20 dB. 相似文献
22.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献
23.
The coordination chemistry of beryllium with particular emphasis on chelates under physiological or near physiological conditions is surveyed. Hard donors such as oxygen are emphasized; equilibrium data and formation constants are reported as an indication of the strength of the complex. 相似文献
24.
杂多酸催化合成乙酸乙酯 总被引:14,自引:0,他引:14
回流吸附法制备的负载型12-钨磷酸(HPW/C)是合成乙酸乙酯的高效催化剂。最佳反应条件下乙醇转化率达96%,酯化选择性100%。催化剂的高活性是由于HPW在活性炭上高度分散,使活性位增多,有效酸量增大。HPW/C还具有热稳定性高和不易流失等优点。 相似文献
25.
摩托罗拉微控制器(MCU)具有编程语言简单、外围设备齐全、存储器模型用户友好、选择广及供应多、性能价格比高等优点,被设计者评为最容易使用的产品之一。在全球顶级的原始设备制造厂商(OEM)的无数嵌入式系统和用户最终产品中都可找到摩托罗拉的MCU,包括键盘、传呼机、电子游戏机、洗衣机、安全系统及汽车等。 相似文献
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A new speckle shearing interferometer with simple setup is proposed. The interferometer can be converted easily from a speckle referenced speckle pattern interferometer into a speckle shearing interferometer and vice versa. A beamsplitter and a mirror are used to generate the shear. The amount of shear can be adjusted by simply rotating the mirror. The costs involved are low and it is particularly useful for fast inspection in non-destructive testing of structural integrity. Both the theoretical studies of the method of measurement and the experimental results are presented. 相似文献
30.
The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer 总被引:4,自引:0,他引:4
X.Y. Chen K.H. Wong C.L. Mak J.M. Liu X.B. Yin M. Wang Z.G. Liu 《Applied Physics A: Materials Science & Processing》2002,75(4):545-549
Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find
that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111)
and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions
of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were
of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented,
(100)-oriented and polycrystalline LNO, respectively.
Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002 相似文献