Sensitivity of methyl thiolate desulfurization selectivity to reaction temperature and hydroxyl coverage

The adsorption and reaction of methanethiol (CH3SH) and dimethyl disulfide (CH3SSCH3) on Mo(110)-(1 x 6)-O have been studied using temperature-programmed reaction spectroscopy and reflection-absorption infrared spectroscopy over the temperature range of 110-550 K. The S-H bond is broken upon adsorption to form adsorbed OH, water, and methyl thiolate (CH3S-) at low temperature. Water is evolved at 210 and 310 K via molecular desorption and disproportionation of OH, respectively. Some hydroxyl remains on the surface up to 350 K. Methyl thiolate is also formed from CH3SSCH3 on Mo(110)-(1 x 6)-O. Methyl thiolate undergoes C-S cleavage above 300 K, yielding methane and methyl radicals. There is also a minor amount of nonselective decomposition leading to the formation of carbon and hydrogen. Methane production is promoted by adsorbed hydroxyl. As the hydroxyl coverage increases, the yield of methyl radicals relative to methane diminishes. Accordingly, there is more methane produced from methanethiol reaction than from dimethyl disulfide, since S-H dissociation in CH3SH produces OH. The maximum coverage of the thiolate is approximately 0.5 monolayers, based on the amount of sulfur remaining after reaction measured by Auger electron spectroscopy. In contrast to cyclopropylmethanethiol (c-C3H5CH2SH), for which alkyl transfer from sulfur to oxygen is observed, there is no evidence for transfer of the methyl group of methyl thiolate to oxygen on the surface. Specifically, there is no evidence for methoxy (CH3O-) in infrared spectroscopy or temperature-programmed reaction experiments.     

Syntheses and Crystal Structures of Two Metal Succinates Modified by Bipyridines

Two new metal succinates modified by rigid bipyridines, Cd(4, 4′‐bpy)(C₄H₄O₄)·1/4H₂O ( 1 ) and Cu(2, 2′‐bpy)(C₄H₄O₄)_0.5(NO₃)(H₂O) ( 2 ) (bpy = bipyridine), have been synthesized by hydrothermal reactions and structurally determined. Complex 1 crystallizes in the orthorhombic space group Cmca with the cell parameters a = 11.696(2), b = 15.554(2), c = 15.874(3) Å, α = β = γ = 90.00°, V = 2888(3) ų, Z = 8. Complex 2 crystallizes in the triclinic space group with a = 7.077(1), b = 9.838(2), c = 10.461(2) Å, α = 71.941(3)°, β = 73.078(3)°, γ = 74.502(3)°, V = 649.8(2) ų, Z = 2. In complex 1 , a 2‐D network was formed by Cd‐succinato bonding. The 2‐D networks are pillared by 4, 4′‐bpy ligands, forming a 3‐D grid framework. The 2‐fold interpenetration of the resulting 3‐D frameworks completes the molecular structure. In complex 2 , the Cu^II atom adopts a distorted octahedral in which the Cu^II atoms are bridged by two H₂O molecules into an infinite zigzag chain, [Cu₂(H₂O)₂(C₄H₄O₄)]_n. The neighboring chains are further linked by π‐π stacking interactions into a 2‐D network, and the interlayer hydrogen bonds lead to the final 3‐D crystal structure.     

A New Activation Method for Electroless Metal Plating：Palladium Laden via Bonding with Self—Assembly Monolayers

A new activation method has been developed for electroless copper plating on silicon wafer based on palladium chemisorption on SAMs of APTS without SnCl2 sensitization and roughening condition.A closely packed electroless copper film with strong adhesion is successfully formed by AFM observation.XPS study indicates that palladium chemisorption occurred via palladium chloride bonding to the pendant amino group of the SAMs.     

[(dien)Cu(imH)](ClO4)2、[(tren)Cu(imH)](ClO4)2中配位咪唑的离解

本文用紫外可见光谱、pH滴定等方法研究了配合物[(dien)Cu(imH)](ClO₄)₂、[(tren)Cu(imH))(ClO₄)₂中Cu-imH的配位和离解作用,得到了它们的稳定常数,并探索了共存配体的影响。     

含IIIA或VA族杂原子的碳原子簇负离子的研究

在自制的仪器上，以脉冲激光束在高真空中溅射适当的样品，产生了一系列合有1个VA族原子（N、P、As）或ⅢA族原子（B、Al）及13个以下碳原子的原子簇负离子。在实验记录的飞行时间质谱中，这些簇离子的信号强度均因其碳原子数的奇偶而发生交替变化．对实验结果的分析研究显示：这些簇离子均为直链构型．VA或ⅢA族原子位于链的一端，所有成簇原子的价键均得到满足．     

Total syntheses of epothilones B and d

A convergent, total synthesis of epothilones B (2) and D (4) is described. The key steps are Normant coupling to establish the desired (Z)-stereochemistry at C12-C13, Wadsworth-Emmons olefination of methyl ketone 28 with the phosphonate ester 8, diastereoselective aldol condensation of aldehyde 5 with the enolate of keto acid derivatives to form the C6-C7 bond, selective deprotection of acid 52, and macrolactonization.     

基于IC设计的验证技术

验证是Soc设计最重要的阶段.在将设计交付给生产厂家之前,要想能够找出体系结构上、功能上或者物理实现上的错误只是通过验证.对于众多团队设计而言,验证占到了设计流程的50%至80%.本文主要介绍了功能仿真、静态时序仿真、形式仿真等相关验证技术.     

Decision-feedback detection for block differential space-time modulation

Time variation on fading channels hinders accurate channel estimation in differential space-time modulation and deteriorates the performance. Decision-feedback differential detection is studied for block differential space-time modulation, and compared with conventional differential space-time modulation. It is observed that the proposed scheme does not suffer effective fading bandwidth expansion, as does the conventional scheme. An improved effective signal-to-noise ratio approach is proposed for analyzing the performance of the proposed scheme in time-varying flat Rayleigh fading. Theoretical analysis and simulations show the improved performance of the proposed scheme over the conventional scheme.     

Performance analysis of channel estimation for OFDM systems with residual timing offset

The authors present an analysis of the effect of timing offset on channel estimation for comb-type pilot-aided orthogonal frequency division multiplexing (OFDM) systems. Residual timing offset does not negatively affect the channel estimation of the pilot subcarrier, but does corrupt the channel information obtained via interpolation. This paper provides the mean square error (MSE) channel estimation performance when a linear interpolation technique is used in a comb-type pilot-aided OFDM system. Analysis shows that the performance degradation of the channel estimator due to imperfect frame synchronization is dependent on the frequency correlation of the channels and the amount of timing offset     

热退火对 InGaN薄膜性质的影响

对采用金属有机化学气相沉积方法生长的In组分为0.14的InGaN薄膜在不同温度下进行了热退火处理.通过X射线衍射、原子力显微镜、光致发光谱和变温霍尔等测试方法研究了In0.14Ga0.86N薄膜的晶格质量、表面形貌以及光学特性和电学特性随着退火温度的变化情况.结果表明,有利于提高In0.14Ga0.86N薄膜质量的最佳退火温度为500℃.通过对变温霍尔实验数据的拟合,初步分析了退火前后InGaN样品中的多种散射机制以及它们的变化情况.