A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs

In this letter, bandpass filters with one or two tunable transmission zeros are proposed. The reconfigurable transmission zeros are implemented through varactors in combination with tapped quarter-wavelength stubs. Based on mixed mode simulations including EM simulation and circuit simulation, the proposed filters were designed and fabricated on low-cost FR4 board. The measurement results verified the design concepts.     

双波长稳频CO_2激光模糊控制系统的建模与优化

报导一种模糊逻辑控制系统的建模与优化方法。以此方法设计的模糊逻辑控制器，用于双波长稳频ＣＯ２激光器的控制得到令人满意的结果。     

Storage performance-metrics and benchmarks

The metrics and benchmarks used in storage performance evaluation are discussed. The technology trends taking place in storage systems, such as disk and tape evolution, disk arrays, and solid-state disks, are highlighted. The current popular I/O benchmarks are then described, reviewed, and run on three systems: a DECstation 5000/200 running the Sprite Operating System, a SPARCstation 1+ running SunOS, and an HP Series 700 (Model 730) running HP-UX. Two approaches to storage benchmarks-LADDIS and a self-scaling benchmark with predicted performance-are also described     

离子注入中污染的产生及防护

本文概述了离子注入过程中污染产生的原因和防止污染的措施，特别强调了对微粒污染和金属污染的防护以满足ＵＬＳＩ加工对离子注入的要求。     

Control of peak sidelobe level in adaptive arrays

Adaptive beamforming techniques are now widely used to reject interference (jammer/clutter) signals in radar, communication, and sonar applications. In adaptive arrays using the sample matrix inversion (SMI) algorithm, inadequate estimation of the covariance matrix results in adaptive antenna patterns with high sidelobes and distorted mainbeams. In this paper, a method is proposed to precisely control the peak (rather than average) sidelobe level of adaptive array patterns. The proposed method is also generalized to adaptive array antennas with moderate bandwidth and large random amplitude and phase errors. Theoretical analysis and simulation results are provided to illustrate the performance of the method proposed     

Extended application of the complex source-point theory

In this paper, the complex source-point theory used for a symmetric concave spherical resonator is extended to an asymmetric concave spherical resonator. Thus, the formulae for the field distribution of the asymmetric spherical resonator can be easily deduced from the formulae for the field distribution of the symmetric resonator, thereby the application range of the complex source-point theory is enlarged and a convenient method is provided for the field analysis of an arbitrary spherical resonator.     

Nanostructured thermoset epoxy resin templated by an amphiphilic poly(ethylene oxide)‐block‐poly(dimethylsiloxane) diblock copolymer

An amphiphilic poly(ethylene oxide)‐block‐poly(dimethylsiloxane) (PEO–PDMS) diblock copolymer was used to template a bisphenol A type epoxy resin (ER); nanostructured thermoset blends of ER and PEO–PDMS were prepared with 4,4′‐methylenedianiline (MDA) as the curing agent. The phase behavior, crystallization, hydrogen‐bonding interactions, and nanoscale structures were investigated with differential scanning calorimetry, Fourier transform infrared spectroscopy, transmission electron microscopy, and small‐angle X‐ray scattering. The uncured ER was miscible with the poly(ethylene oxide) block of PEO–PDMS, and the uncured blends were not macroscopically phase‐separated. Macroscopic phase separation took place in the MDA‐cured ER/PEO–PDMS blends containing 60–80 wt % PEO–PDMS diblock copolymer. However, the composition‐dependent nanostructures were formed in the cured blends with 10–50 wt % PEO–PDMS, which did not show macroscopic phase separation. The poly(dimethylsiloxane) microdomains with sizes of 10–20 nm were dispersed in a continuous ER‐rich phase; the average distance between the neighboring microdomains was in the range of 20–50 nm. The miscibility between the cured ER and the poly(ethylene oxide) block of PEO–PDMS was ascribed to the favorable hydrogen‐bonding interaction. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3042–3052, 2006     

A random switching method for HPWM full-bridge inverter

To overcome the problem of unequal switching loss in power switches, in conventional hybrid pulse width modulation (HPWM) full-bridge inverters, a random switching method for HPWM full-bridge inverters is proposed. The proposed method equalizes switching losses of the four switches, while also providing good output performance