等厚双层涂层材料受集中力作用的平面问题理论解

界面应力的正确评价是分析薄膜涂层材料力学特性的难题之一。利用镜像点法和Dirichlet等值性原理，本文推导了等厚双层薄膜涂层材料受表面集中力作用的平面问题理论解。该显式理论解是以固定在各镜像点上的局部坐标系下的Goursat应力函数的形式给出的。对应于高阶镜像点的应力函数，可通过递推的方法，从对应于低阶镜像点的应力函数求得，而且也易于计算机编程。随着镜像点阶数的增大，它与界面的距离也越来越大，因而相对应的应力函数对界面应力的影响越来越小。最后的算例表明，只需考虑前面有限个镜像点，便可获得足够精度的解。该理论解可作为格林函数，以求解复杂问题的理论解，也可用作边界元法的基本解，提高数值计算的精度和效率。     

含k-次增生算子的Ishikawa迭代的收敛性问题

主要研究了非线性方程x Tx=f的Ishikawa迭代解．其中T为k-次增生的或增生的，并在一致光滑和任意的实Banach空间分别研究了上述方程的带误差的Ishikawa迭代解，从而推广了已知的一些结果。     

L3C宇宙线实验中Z0数据的分析

μ子动量谱的精确测量是L3C宇宙线实验最重要的目标之一.事例重建的好坏是该测量的关键,而能量确定的衰变为双μ子的事例是检验重建程序的最好手段.该数据分析利用在2000年中获取的数据作为样本,筛选出了LEP在2000年4月、5月、8月和9月等Z⁰能量运行期间L3C宇宙线实验数据中记录的Z⁰→μ⁺μ^－事例数据,得到通过重建程序后动量为45GeV的μ子动量分辨率为(5.4?7±0.25)%.     

瑶药野葛花中6种无机元素的测定

用原子吸收光谱法测定野葛花原生药、野葛花汤剂中的 Ca、Mg、Cu、Zn、Fe、Mn等 6种无机元素含量。结果表明 ,原药和水煎液中 Ca、Mg含量比较丰富 ;各种元素的煎出率存在着较大的差异 ,其中 Cu、Zn、Fe的煎出率较高 ,Zn最高 ,达到了 82 .5 6 % ;Ca最低 ,为 5 .5 8%。并且将其结果与葛根的无机元素做了比较。为探讨无机元素与中药药效之间的关系提供了基础数据。     

MULTIPLICATION OF WEAK FUNCTIONS

This paper is a contionuation of [1] and is concerned with multiplication of weak functions. Here the weak functions are treated as generalized expansions in Hermite functions in [2].     

乙醇增敏光泽精－H_2O_2－Pb（Ⅱ）化学发光体系的研究及应用

本文研究了Ｈ＿２Ｏ＿２氧化光泽精发光反应及乙醇的敏化作用，发现加入乙醇可使铅催化Ｈ＿２Ｏ＿２，氧化光泽精的发光强度有较大幅度的增强；铅量在３×１０￣（－７）～８×１０￣（－５）ｇ／ｍＬ。范围内与发光强度成正比．方法检出限为０．１０μｇ／ｍＬ；对含４μｇ／ｍＬＰｂ（Ⅱ）１１次重复测定，其ＲＳＤ为２．３％．对３２种常见的阴阳离子进行了干扰实验，表明方法具有较好的选择性。本法应用于水样及沉积物标样中痕量铅的测定，结果良好。     

Non-equilibrium grain boundary cosegregation of Mo and P

The segregation of P at grain boundaries is believed to be an important cause of temper embrittlement in steels. As an alloy element, Mo may reduce the embrittlement. However, the concentration measured by Auger electron spectroscopy at the grain boundary in 2.25Cr1MoV and 12Cr1MoV showed that the concentration of P increased with that of Mo, which indicates that Mo and P cosegregated to the grain boundary in Cr-Mo steels.     

Enhanced hardness in B-doped ZnO thin films on fused quartz substrates by pulsed-laser deposition

B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 10²⁰ cm⁻³ and the resistivity lower than 3 × 10⁻³ Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films.