微光CCD摄像器件综合特性的分析与比较

ＣＣＤ的优良特性使其在微光电视技术领域得到了广泛运用。本文对各种微光ＣＣＤ摄像器件的综合特性例如信噪比、探测率、动态范围与计数模式等进行了详细的研究与对比，并得出基本结论。     

全双极WTA模型的改进及其实现

提出了一种相似度的新定义，使双极ＷＡＴ模型的实现更加简洁明了。增加一个阈值使系统能判别非存储模式或因其信息量过低而无法鉴定的输入模式，阈值的大小与要求的容错能力有关。双极相似度及阈值通过光学方法实现。阈值的光学实现使系统仍具有照明不变性。通过电路实现取及ＷＴＡ网络的迭代运算。     

任意型一维FIR数字滤波器设计新方法

本文介绍了一种设计任意型（宽带、窄带、低阶、高阶、低通、高通、带通、带阻）一维FIR数字滤波器新方法．给出设计不同类型滤波器的统一方法。各种类型滤波器脉冲响应的设计公式简单、计算方便。该方法消除了Gibbs现象．不仅克服了优化设计中收敛速度、设计精度及初值选取等问题，而且减少设计高阶滤波器的时间。最后，本文给出了各种类型滤波器设计的仿真结果。     

(NH4)2MoS4在活性炭上浸渍过程的研究:Ⅱ.干燥机理及模型

（ＮＨ＿４）＿２ＭｏＳ＿４在活性炭上浸渍过程的研究Ⅱ．干燥机理及模型秦慧芳，张成芳，陆岗，俞丰，朱子彬（华东理工大学无机化工研究所，上海２００２３７）２３７）关键词硫代钼酸铵，活性炭，干燥，钼分布，干燥模型负载型催化剂的活性组分在载体上的分布，受浸渍...     

半导体耦合腔激光器的波长调谐与频率调制特性分析

本文将激光射器与调制器的直接耦合和耦合槽的影响综合考虑，用散射矩阵法及两步等效反射率法，对沟槽耦合腔激光器的波长调谐和频率调制特性进行了分析，数学处理简单，物理图象清晰。     

Amending cultures of selenium-resistant bacteria with dimethyl selenone

A possible biological intermediate in the reduction and methylation of selenium oxyanions, dimethyl selenone, was synthesized, and the first experiments involving the amendment of selenium resistant bacterial cultures with this compound are reported. The amount of volatile, reduced selenium-containing species released from these cultures into the headspace is significantly more than that produced in analogous experiments involving sodium selenate amended cultures. Dimethyl selenone is reduced in the presence of dimethyl sulfide and dimethyl disulfide in a complex growth medium, trypticase soy broth with 0.1% nitrate. This reduction occurs whether or not the reduced sulfur compounds are biologically produced.     

陶瓷传感器的微型化与集成化

本文主要介绍陶瓷传感器在微型化及集成化方面的进展；指出了集成化多功能传感器存在的技术问题及未来发展趋势。     

温度调谐LBO晶体光参量振荡器

本文详细研究０．５３２μｍ激光泵浦、温度调谐Ⅱ型非临界相位匹配ＬＢＯ光参量振荡器。当温度从２０℃升高到２００℃时，其信号波和闲置波的调谐范围分别为１．００２～０．８９８μｍ和１．１３４～１．３０６μｍ。本装置最吸引人之处是本征输出线宽比Ⅰ型情形小一个量级。     

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.