水闸闸室结构三维样条边界元分析

用三维样边界元法分析水闸闸室结构。底板，闸墩和载水墙等为其子结构，交通桥，工作桥和胸墙等处理为内部支撑。地基和边载可以是任意的，只要能给定地表位移面力关系。在各种工况下，不论是设置平板门还是弧形门，是平底板是反拱底板，即使在稀疏剖分下也能给出高精度的位移场，应力场和地基反力场。     

基于变芯径光纤的光学系统在光造型中的应用

光学系统采用变芯径光纤，可大幅度提高光的传输效率，增加光学子系统柔性。描述了光造型工作原理及其理论依据，在介绍所研制的光的成型系统光学子系统的基础上，阐述了紫外光源的选择与设计，及变芯径光纤的设计、传输、耦合与聚焦等技术。该套基于变芯径光纤的光学子系统成本低、体积小、效率高，巳成功应用于所研制的台式低成本快速成型系统中，为该系统的进一步推广奠定了技术基础。     

VPDN企业端解决方案

从虚拟专用拨号网（VPDN）结构的基本原理、隧道协议、认证方式等方面概述了中国联通开展VPDN业务的实施步骤和解决VPDN企业端的5种模式，并介绍了中国石油天然气管道电信公司实现VPDN企业端的具体方案。     

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Large-scale preparation of thin strain-relaxed SiGe is achieved by combining ion implantation and ultrahigh vacuum chemical vapor deposition. The resulting materials were analyzed by double crystal X-ray diffraction, micro-Raman spectroscopy, and tapping mode atomic force microscope. Results revealed that 100-nm-thick Si_0.7Ge_0.3 layers with the diameter of 125 mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50 keV Ar⁺ ions. The strain relaxation is also disclosed to change with both ion species and energy. However, post-modification of SiGe by ion implantation will cause serious damage to the crystal structures, and result in the formation of poly-crystal SiGe.     

PIXE analysis of the Mn-doped content in Ga1-xMnxN film grown by LP-MOVPE

Summary Department of Technical Physics, School of Physics, Peking Unive     

Calculation of the surface energy of bcc transition metals by using the second nearest-neighbor modified embedded atom method

The surface energies for 24 surfaces of all bcc transition metals Fe, Cr, Mo, W, V, Nb and Ta have been calculated by using the second nearest-neighbor modified embedded atom method. The results show that, for all bcc transition metals, the order among three low-index surface energies E_(1 1 0) < E_(1 0 0) < E_(1 1 1) is in agreement with experimental results and E_(1 1 0) is also the lowest surface energy for various surfaces. So that from surface energy minimization, the (1 1 0) texture should be favorable in the bcc films. This is also consistent with experimental results. The surface energy for the other surfaces increases linearly with increasing angle between the surfaces (h k l) and (1 1 0). Therefore, a deviation of a surface orientation from (1 1 0) can be used to estimate the relative values of the surface energy.     

电致伸缩陶瓷微位移器非线性的数值方法补偿

本文通过对电致伸缩陶瓷材料的非线性进行分析。找到了补偿电致伸缩陶瓷非线性的数值方法，并对不同回程大小的电滞回线进行了分段处理，使补偿结果更为精确。     

激光干涉环圆心位置测定技术及应用

本文利用在平面内绕定轴旋转的线阵ＣＣＤ及微机系统自动测定激光干涉环圆心位置及应用于激光外径千分尺平行度检查仪平行度检查结果的自动数字化输出。     

热载流子注入对MOS结构C─V和I─V特性的影响

讨论了热载流子注入对ＭＯＳ结构Ｃ─Ｖ和Ｉ─Ｖ特性的影响。指出热载流子效应引起载流子陷落和界面态的产生，导致Ｃ─Ｖ特性曲线畸变、平带电压漂移和恒定电压下ＳｉＯ２漏电流随时间漂移。本文论述了这些漂移的机理，提出了漂移的ｔｎ物理模型，从而很好地解释了实验所观察到的现象。