场顺序彩色显示器

荫罩CRT受自身结构的限制,要进一步改进其分辨率就有很大的困难。近年已研制成一种获得彩色图像的颇有吸引力的替代品,即场顺序彩色显示器。它由单色CRT和液晶电子色闸组成,称之为LC/CRT系统。液晶电子色闸由液晶π盒及其连用的偏振片组成,可看成是老式机械彩色轮那样的一种电控色带带通滤色片。本文描述了液晶电子色闸的功能及其工作优点,讨论了其可能结构与显示特性。     

New concept for applying edge line phase-shifting masks to arbitrary mask layouts

This paper explains the principle of a method which avoids printing of phantom resist lines due to undesired intensity minima appearing on Cr-less edge line phase-shifting masks. The method combines principles of grey-tone lithography and attenuated phase-shifting masks to give, what we call, a Cr-Less Attenuated Phase-shifting mask (CLAP). Rules for generating a CLAP design and a paradigm setup of a CLAP mask are presented. The capabilities and possible limitations of the CLAP method based on simulated results for a standard wafer stepper setup using the SOLID lithography simulator are being assessed.     

A simple method improving the analyzing accuracy of circular groove guide

A simple method is introduced to improve the analysing accuracy of circular groove guide. With this method, the characteristic equation of circular groove guide is derived and its solution is given and discussed.The Project Supported by National Natural Science Foundation of P.R.China     

宽带无源光网络(BPON)关键技术的发展与研究

宽带无源光网络（BPON）是实现宽带、多业务接入的理想物理平台，本文介绍了BPON网络的发展，重点讨论了将ATM技术和PON技术相结合的APON系统及其升级系统SuperPON的基本结构和关键技术，对最近兴起的将以太技术和PON技术相结合的EPON系统的基本概念和工作原理也进行了阐述，并对未来BPON技术的发展进行了展望。     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

激光等离子体2660紫外探针及干涉系统

成功地在六路高功率Nd玻璃激光装置上建立了2660紫外激光探针和适合紫外波段的Normaski干涉仪,首次将可见波长的连续激光应用于紫外干涉仪中靶成像调整和光路准直。利用该紫外光干涉仪,在铜柱状靶(φ500μm)上测量了厚等离子体中高达0.6n。的电子密度。     

Error analysis: a tool for selecting travel demand models

In developing travel demand models it is generally assumed that the base-year data used in developing the parameters, as well as the forecasted data to be used as independent variables for the design year, are of acceptable quality. The purpose of this paper is to present the application of error propagation theory in assesing the predictive quality of one type of travel demand forecasting model (multinomial logit models) and to demonstrate how error considerations can be used as a tool for identifying the optimal model. The general conclusions of this study are that: (1) it is indeed possible to quantify errors in dependent variables in logit models as a consequence of errors in independent variables; and (2) error consideration can be used as a tool for identifying the optimal model from a set of candidate models. Further research is recommended to develop better insights into the phenomenon of error propagation so that the consideration of errors can be a factor in decisions on model selection.