结构振动控制中压电阻尼技术研究—压电被动阻尼技术（一）

压电阻尼技术有两种类型：压电被动阻尼技术和压电主动阻尼技术。本文对其中的压电被动阻尼技术进行了研究，结果表明：通过给压电元件并联适当的外部电路，可使压电系统具有与粘弹阻尼材料及动力吸振器相似的物理特性。合理配置电路参数，可以实现最优阻尼比。     

On contact resistance measurement using four-terminal Kelvinstructures in advanced double-polysilicon bipolar transistor processes

The contact between a polycrystalline silicon (polysilicon) layer and a silicon substrate is investigated for an advanced double-polysilicon bipolar transistor process. Contact resistances are measured using four-terminal cross bridge Kelvin structures. The specific contact resistivity of the interface and the sheet resistance of the doped substrate region directly underneath the contact are extracted using a two-dimensional simulation model originally developed for metal-semiconductor contacts. The extracted sheet resistance values are found to be larger than those measured using van der Pauw structures combined with anodic oxidation and oxide removal. During the fabrication of the contacts, epitaxial realignment of the polysilicon in accordance to the substrate orientation and severe interdiffusion of dopants across the interface take place, which complicate the characterization. The validity of the two-dimensional simulation model applied to the poly-mono silicon contact is discussed     

激光远距作用的机制与效应

本文定量分析激光远距作用的机理并对它们在治癌中的作用作简要的论述。     

三次谐波系统混沌光场的光子统计特性

本文数值分析了三次谐波系统混沌光场的光子统计特性，从混沌态的遍历性出发计算了基波和谐波光场的Haken因子，得出混沌光场是一种大涨落的光场，其光子统计服从Super-Poisson分布，光场涨落随系统奇怪吸引子分维数增大而变化。     

拟亚纯映射的充满圆

该文用较简明的方法讨论了平面上K 拟亚纯映射在\{lim[DD(X]r→∞[DD)]\}[TX-][SX(]S(r,f)[]lgr[SX)]=∞ 条件下及有限正级K 拟亚纯映射存在充满圆序列, 同时也证明了零级K 拟亚纯映射的最大型Borel方向及有限正级Borel方向上存在充满圆序列.     

外来的捕食物种对濒危物种的影响

In this paper, an important problem arising from conservation biology is considered. Namely, how does the introduced species affect the survival of a native endangered species through predation? By using Kamke comparison theorem and some results in Cui and Chen‘s paper (1998), some sufficient conditions that guarantee the permanence of the species and global stability of a unique positive periodic solution are obtained. Biological implication of these results are discussed.     

INVERSE EIGENVALUE PROBLEM OF HERMITIAN GENERALIZED ANTI-HAMILTONIAN MATRICES

§1　IntroductionWe considerthe following inverse eigenvalue problem offinding an n-by-n matrix A∈S such thatAxi =λixi,i =1,2 ,...,m,where S is a given set of n-by-n matrices,x1 ,...,xm(m≤n) are given n-vectors andλ1 ,...,λmare given constants.Let X=(x1 ,...,xm) ,Λ=(λ1 ,λ2 ,...,λm) ,then the above inverse eigenvalue problemcan be written as followsProblem Given X∈Cn×m,Λ=(λ1 ,...,λm) ,find A∈S such thatAX =XΛ,where S is a given matrix set.We also discuss the so-called opti…     

大规模集成电路浮栅ROM器件总剂量辐射效应

提出了一种大规模集成电路总剂量效应测试方法:在监测器件和电路功能参数的同时,监测器件功耗电流的变化情况,分析数据错误和器件功耗电流与辐射总剂量的关系.根据该方法利用60Co γ射线进行了浮栅ROM集成电路(AT29C256)总剂量辐照实验,研究了功耗电流和出错数量在不同γ射线剂量率辐照下的总剂量效应,以及参数失效与功能失效时间随辐射剂量率的变化关系,并利用外推实验技术预估了电路在空间低剂量率环境下的失效时间.     

npn AlGaN/GaN HBT模型与特性分析

基于实验数据对GaN材料的少子寿命和碰撞电离率进行了建模,应用漂移-扩散传输模型开展了npnAlGaN/GaN异质结双极晶体管的特性研究,给出了器件导通电压、偏移电压和饱和电压的解析式.结果表明:实际器件导通电压、偏移电压及饱和电压较大的原因主要是高基区电阻和基区接触的非欧姆特性,为器件的工艺制造提供了理论指导.