欧洲无线DSL的发展现状及市场前景

对欧洲的立法者来说，目前最为关注的课题之一便是如何解决数字鸿沟这一困扰欧洲大陆信息与通信技术整体发展水平的矛盾。向人们提供高速因特网接入服务是消除数字鸿沟的有效手段，而无线数字用户线技术以及其成低、通信质量好、覆盖范围大及灵活性等优势成为宽带接入技术中的佼佼者，并获得很多欧洲国家电信运营商的青睐。     

第三代短波自动链路建立系统特性分析及仿真实现

分析了第三代短波自动链路建立系统的工作特性及技术特点，并对系统仿真实现的原则及一些细节问题进行了较深入的探讨，同时对仿真实现中涉及的链路质量分析（LQA）算法进行了研究。     

Thermodynamic modeling of native point defects and dopants of GaN semiconductors

A thermodynamic modeling of GaN was carried out to describe the thermodynamic behavior of native defects, dopants, and carriers (free electrons and holes) in GaN semiconductors. The compound energy model (CEM) was used. An unintentionally doped GaN was taken as an example. Oxygen was introduced into the model as the unintentionally doped impurity, according to the practical experimental phenomena. The energies of component compounds in the model were defined based on the results of the ab initio calculations and adjusted to fit experimental data. The thermodynamic properties of the defects and the oxygen doped were calculated to show the facility of the model.     

The influence of viewing distance on subjective impairment assessment

In this paper, the influence of viewing distance on subjective assessment of the impairment in video sequences is investigated. Subjective tests using the double-stimulus impairment scale variant II (DSIS II) method have been conducted at viewing distances of 5H (where H stands for the screen height) and 3H, respectively. Several statistical measures have been used to analyze the influence, including correlations and ANOVA (analysis of variance) tests. The results reveal that there is a very high correlation between the subjective scores, the variances are similar under the two viewing distances, the means of subjective data at these two viewing distances are the same, and there is no interaction between the viewing distance and the other two factors, i.e., the codec system and the source sequence. Throughout the tests, there is no evidence that a closer viewing distance such as 3H will vary the subjective test result statistically significantly.     

A network management architecture for robust packet routing in meshoptical access networks

We describe an architecture for an optical local area network (LAN) or metropolitan area network (MAN) access. The architecture allows for bandwidth sharing within a wavelength and is robust to both link and node failures. The architecture can be utilized with an arbitrary, link-redundant mesh network (node-redundancy is necessary only to handle all node failures), and assumes neither the use of a star topology nor the ability to embed such a topology within the physical mesh. Reservation of, bandwidth is performed in a centralized fashion at a (replicated) head end node, simplifying the implementation of complex sharing policies relative to implementation on a distributed set of routers. Unlike a router, however, the head end does not take any action on individual packets and, in particular, does not buffer packets. The architecture thus avoids the difficulties of processing packets in the optical domain while allowing for packetized shared access of wavelengths. We describe the route construction scheme and prove its ability to recover from single link and single node failures, outline a flexible medium access protocol and discuss the implications for implementing specific policies, and propose a simple implementation of the recovery protocol in terms of state machines for per-link devices     

无线智能网技术

本介绍CDMA无线智能网（WIN）的产生背景、技术标准、提供的业务、与GSM移动智能网技术上的差异以及它在实际工程中的应用，最后对WIN的发展进行展望。     

Effects of extended dislocations on charge distribution in GaN epilayer

We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.     

Analysis on the effectiveness of the 20-H rule for printed-circuit-board layout to reduce edge-radiated coupling

This paper presents the quantified study of the electromagnetic radiation mechanism of the 20-H rule using a numerical approach that has not yet been systematically addressed. The 20-H rule is a rule-of-thumb layout technique recommended to minimize radiated fields propagating from the edges of a printed circuit board (PCB) coupling onto nearby structures. Propagating electromagnetic fields may corrupt adjacent cable assemblies, sheet metal enclosures, and aperture openings. The magnitude of this design rule is investigated using the full-wave finite-difference time-domain (FDTD) method. An analysis on whether benefits exist from use of this rule is examined and under what conditions the rule is valid when correctly implemented. The purpose of this paper is to provide insight into the validity of the 20-H rule, recognizing that every PCB will have different simulation results. FDTD is used to capture a snapshot view of field propagation. This view allows one to determine the validity of the 20-H rule at a single point of time within a dynamic structure and what may be expected when digital components are finally added to a PCB assembly, which generally negates simulated results.     

An experimental study of carrier heating on channel noise in deep-submicrometer NMOSFETs via body bias

In this paper, RF noise in 0.18-mum NMOSFETs concerning the contribution of carrier heating and hot carrier effect is characterized and analyzed in detail via a novel approach that modulates the channel carrier heating and number of hot carriers using body bias. We confirm qualitatively a negligible role of hot carrier effect on the channel noise in deep-submicrometer MOSFETs. For a device under reverse body bias (V_b), even though the increase in hot carrier population is clearly characterized by dc measurements, the device high-frequency noise is found to be irrelevant to the increase in the channel hot carriers. Experimental results show that the high-frequency noise is slightly reduced with the increase in |V_b|, and can be qualitatively explained by secondary effects such as the suppression of nonequilibrium channel noise and substrate induced noise. The reduction of NF_min and R_n with the increase in |V_b| may provide a possible methodology to finely adjust the device high-frequency noise performance for circuit design     

A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC

A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation.