X 波段氮化镓合成固态放大器

Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.     

DNA-directed formation of peptide bond: a model study toward DNA-programmed peptide ligation

A model study of DNA-directed peptide ligation has been developed by transferring fluorescent reporting group from small molecule thioester to a DNA strand (template DNA) in the presence of a thiol-functionalized DNA strand (auxiliary DNA), mimicking the Native Chemical Ligation (NCL) reaction. This DNA-directed transfer shows dependence on the sequence complementarity of the two DNA strands, with in situ generated 4-thiolphenylmethyl functionalized oligonucleotide as the auxiliary DNA strand, under mild basic condition (pH=8.5), and with tris(2-carboxyethyl) phosphine hydrochloride (TCEP) as a reducing agent. Reactions with different amino acid α-thioesters resulted in varied transfer efficiencies from glycine to α-substituted amino acids. This study has provided the basic foundation to use DNA-programmed chemistry toward the chemical synthesis or unnatural modification of protein molecules.     

硅纳米线的电学特性

总结了硅纳米线在电学特性方面的研究进展,重点分析了本征及掺杂硅纳米线的载流子浓度与迁移率、场发射及电子输运特性。研究表明通过对硅纳米线进行掺杂可提高载流子浓度及迁移率、场发射和电子输运性能,随硅纳米线直径的减小其电学性能增强。因此,硅纳米线在场效应晶体管及存储元件等纳米器件方面具有极大的应用前景。     

一款800V VDMOS终端结构的设计

设计了一款800 V VDMOS终端结构,采用场限环(FLR)与场板(FP)相结合的方式,在场限环上添加多晶硅场板与金属场板,有效地降低了表面电场峰值。通过调整终端结构,在135μm的有效终端长度上实现了848 V的击穿电压,最大表面电场为2.34×105 V/cm,小于工业界判断器件击穿场强标准(2.5×105 V/cm),且电场分布比较均匀,终端结构的稳定性和可靠性高。     

面向云物联网的车辆远程智能监控系统的研究

物联网和云计算使我们进入了网络时代的新阶段。将物联网“物物相连,全面感知”的特征与云平台的“云计算,云存储”能力全面整合,为相关行业形成完整统一的网络服务平台,是互联网 的有效实践方式。针对目前车载监控系统功能相对简单,难以满足将来智能交通对其的系统化、智能化的要求的问题。研究采用物联网技术和云计算理念,实现了面向云物联网的车辆监控信息平台,为车辆的远程智能监控提出了新的发展思路。     

适用于DC-DC开关电源的振荡器设计

应用于手机等通信电子产品电源系统的DC-DC开关电源变换器芯片,要求具有高性能的振荡器。鉴于此要求,设计了一款具有充放电电容的高性能振荡器。该振荡器基于0.5μm BCD工艺库,利用Cadence和Hspice软件,在芯片系统典型应用环境下仿真,得到的内同步振荡频率为794 k Hz,外部EN同步振荡频率为1 MHz到2MHz;在VCC=5.5 V,0~125℃温度范围内振荡器的频率偏移在6%以内。仿真结果显示,该振荡器性能良好,适用于DC-DC开关电源。     

太阳能建筑物外观及表面光伏组件铺设优化

针对太阳能建筑物外观图的设计及外表面太阳能光伏组件铺设优化问题,首先通过建立以建筑物5个外表面全年总辐射量最大为目标的单目标规划模型,并考虑建筑物的设计要求,基于模拟退火法给出了建筑物的外观设计图,并根据电池性能的优劣顺序及限制条件,利用贪心算法得到建筑物外表电池铺设方案,最后给出了这种方案下的投资收回年限及寿命期内的经济效益。     

Materials and Wireless Microfluidic Systems for Electronics Capable of Chemical Dissolution on Demand

Electronics that are capable of destroying themselves, on demand and in a harmless way, might provide the ultimate form of data security. This paper presents materials and device architectures for triggered destruction of conventional microelectronic systems by means of microfluidic chemical etching of the constituent materials, including silicon, silicon dioxide, and metals (e.g., aluminum). Demonstrations in an array of home‐built metal‐oxide‐semiconductor field‐effect transistors that exploit ultrathin sheets of monocrystalline silicon and in radio‐frequency identification devices illustrate the utility of the approaches.