Zero bias anomalies of transport characteristics of single-barrier GaAs/AlAs/GaAs heterostructures as a result of resonance tunneling between parallel two-dimensional electron gases and suppression of resonance tunneling in a magnetic field as a manifestation of the Coulomb gap in the tunnel density of states

Electron tunnel transport across single-barrier GaAs/AlAs/GaAs heterostructures is investigated. It is shown that “zero bias anomalies”—extrema in differential conductivity close to the zero bias—in the structures investigated are caused by resonance tunneling between parallel two-dimensional electron gases in enriched layers, which are formed from both sides of the barriers due to the presence of Si donor impurities in barriers. The suppression of resonance tunneling between parallel two-dimensional electron gases is found in narrow ranges close to the zero bias (tunnel gap) in a strong magnetic field parallel to the current direction only when a single Landau level is occupied for each of the two-dimensional electron gases. Suppression is induced by a Coulomb gap at the Fermi level in the tunnel density of states. This experiment originally revealed the manifestation of a Coulomb gap in tunneling between parallel two-dimensional electron gases with relatively low mobilities. For these electron gases, the influence of disorder or random potential fluctuations on the mechanism of formation of the tunnel gap is noticeable.     

半线性椭圆方程正解的存在性及熄灭现象

本文在环形域上证明了带有奇异性的半线性椭圆方程边值问题(1)、(2·)在C~2(Ω)∩C~0(Ω)中正解的存在性,且这个解是径向对称的,解关于R_0(R_1)的连续单调性.还给出了解有熄灭现象的充分必要条件.     

Periodic solutions of second-order quasilinear hyperbolic equations

We study a periodic boundary-value problem for a quasilinear equation with the d'Alembert operator on the left-hand side and a nonlinear operator on the right-hand side and establish conditions under which the solution of the indicated problem is unique.Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 47, No. 10, pp. 1370–1375, October, 1995.     

Application of the variation principle for the problem of buckling of a nonlinearly elastic ring nonuniform along its thickness

There has been considerable recent attention given to the stressed and buckled states of items with complicated configuration made of different nonlinearly elastic materials joined by complete adhesion. However, effective analytical solutions for such problems have been hindered by mathematical difficulties. Approximate methods have thus been developed for such problems. A variational combined principle has been formulated in this communication. A nonlinear geometrical approach has been used for formulating a mixed-type functional with physical relationships given by Euler equations, nonlinear equilibrium equations, and nonlinear boundary conditions for a piecewise-nonuniform nonlinearly elastic body composed of finite elements (particles). As an example, buckling along the nonuniform thickness of nonlinearly elastic rings was analyzed hypothetically assuming plane cross-sections. Options for two-, three-, four-, five-, and six-layered rings in a periodical structure have been reviewed. The critical buckling forces for an even number of layers have been found to be equal to each other. The ratios of the critical forces, elasticity moduli, and proportionality levels were determined for all five variants by the Runge-Kutta method.Presented at the Ninth International Conference on the Mechanics of Composite Materials (Riga, October, 1995).Translated from Mekhanika Kompozitnykh Materialov, Vol. 31, No. 2, pp. 262–268, March–April, 1995.     

Investigation of natural compounds by the HPLC method II. HPLC fingerprint method for the epigeal organs of Ferula kuhistanica and F. tenuisecta

A microcolumn HPLC fingerprint method has been developed for the epigeal organs ofFerula kuhistanica andF. tenuisecta. The possibility has been shown of control by the microcolumn HPLC method of the qualitative and quantitative yields of ferutinin in the initial plant raw material and in preparations extracted from it, and also at each stage of the isolation of the desired product. The method is universal and does not depend on species and chemical composition of the plant. Institute of the Chemistry of Plant Substances, Uzbekistan Academy of Sciences, Tashkent. Translated from Khimiya Prirodnykh Soedinenii, No. 6, pp. 635–636, November–December, 1992.     

Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates

The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 /spl mu/m; spacing: 3 /spl mu/m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D/sub h/=1.5 /spl mu/m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed.