Using the magneto-optical Kerr effect to study magnetization processes in two-dimensional magnonic crystals based on YIG thin films

The magneto-optical Kerr effect for red (628 nm) and green (532 nm) light is used to study magnetization processes in 2D magnonic crystals obtained by etching pits with the diameter D ≈ 32 μm to a depth of t ≤ 2 μm in a 16.1-μm-thick film of yttrium iron garnet (YIG). Hysteresis loops obtained in the case of the inplane crystal magnetization at 628 nm are characterized by lower saturation fields H _s and higher remanent magnetizations than those obtained at 532 nm, a result that is attributed to different absorption coefficients of the YIG film at these wavelengths. This difference between the magnetization curves reflects the fact that the magnonic-crystal surface probed with the green light makes a greater contribution to the magneto-optical Kerr effect. Therefore, the green light is more sensitive to the demagnetizing fields, which govern magnetization processes in the magnonic crystals.     

光折变三维信息存储器

分析光折变三维存储器的机理,探讨了光折变三维存储器的编码方式、光折变材料的选择及存储技术,阐述了其产业化进程.     

Whispering-gallery-like modes in square resonators

The mode frequencies and field distributions of whispering-gallery (WG)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the FDTD technique and Pade approximation method. In the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. The WG-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

Carbon adsorbents for the sorpting and concentrating nobel metals

Kinetic, sorption and selectivity properties of commercial adsorbents are improved by adding petroleum residues (tar asphaltene concentrates) 13% of whole mass. Obtained adsorbents can be used for selective extraction of nobel metals from multicomponent polymetallic solutions of heavy metals and fro sewages purification for removing arsenic.     

全球宽带电话市场分析

近两年．IP电话又叫网络电话的发展受到全球的关注。随着宽带接入的发展，基于宽带接入提供的网络电话具有了更大的生命力。从宽带电话的经营模式出发，探究这类业务的出现时现有话音业务市场的影响，进而分析这类业务的发展前景。     

不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

正交数字上变频器AD9857的使用

介绍数字正交上变频器AD9857的原理、功能和基本使用方法以及如何通过单片机8051实现对它的编程控制。     

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.