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入侵检测系统技术现状及其发展趋势 总被引:21,自引:0,他引:21
阐述了入侵检测系统(IDS)的起源、发展和分类,介绍了它的结构和标准化工作,对入侵检测系统存在的问题及发展趋势作了概述。 相似文献
123.
Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films
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Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition'parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of (002) crystal planes of the He-charged Ti film shifts to a lower angle and that of (100) crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening. 相似文献
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为提高CCD摄像机的成像质量,同时使镜头结构紧凑、小型化,在大视场光学镜头的设计中,引入标准二次曲面和偶次非球面。根据初级像差理论,分析了非球面的位置、初始结构参数的求解规律。通过理论计算和ZEMAX光学设计软件的优化,给出工作波长为0.4~0.7μm、全视场角为80°,相对孔径为1∶1.5的镜头设计实例。该镜头由7块镜片组成,包括一个标准二次曲面和两个8次方非球面;在40lp/mm空间频率处的MTF值超过0.85,全视场畸变小于3%,像质优良 相似文献
126.
Baowei Qiao Jie Feng Yun Ling Ting’ao Tang Bomy Chen 《Applied Surface Science》2006,252(24):8404-8409
The effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge2Sb2Te5 film. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge2Sb2Te5 film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge2Sb2Te5 film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory. 相似文献
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Jie Xue Liang Chen Li Zhou Zhifeng Jia Yanping Wang Xinyuan Zhu Deyue Yan 《Journal of Polymer Science.Polymer Physics》2006,44(15):2050-2057
α‐Cyclodextrin (α‐CD) has been complexed with various poly(ethylene glycol) (PEG) derivatives in aqueous solution. It has been found that the end groups of PEG derivatives affect the complexation kinetics greatly, but have only a little influence on the thermodynamic behavior. By increasing the hydrophobicity of end groups, the complexation speeds up rapidly. On the other hand, the bulky end groups slow down the threading of polymeric guests into the cavity of CD. By changing the hydrophobicity and the size of end groups, the complexation rate can be adjusted in the range of several orders of magnitudes, which should be quite useful in the design of new supramolecular systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2050–2057, 2006 相似文献
128.
Based on the theory of calculus of variation, some suffcient conditions are given for some Euler-Lagrangcequations to be equivalently represented by finite or even infinite many Hamiltonian canonical equations. Meanwhile,some further applications for equations such as the KdV equation, MKdV equation, the general linear Euler Lagrangeequation and the cylindric shell equations are given. 相似文献
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