OFDM系统中同步算法的FPGA 实现

给出了一种用于 OFDM 系统中可同时完成帧起始位置估计和载波频偏估计／补偿的同步算法及其 FPGA 实现方法。采用量化的方法对该不需要额外同步序列的估计算法进行了改进,提高了载波频偏的估计精度,并在数字域进行了频偏校正。在硬件实现上,利用 CORDIC 算法能够有效计算三角函数的特点,把频偏估计和频偏校正过程中的反正切运算和角度旋转操作转化成加法和移位操作,实现了计算精度、运算速度和硬件资源利用三方面性能的兼顾。     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

光电对抗仿真试验系统综述

论述了研制光电对抗仿真试验系统建设的目的和意义,光电武器系统的现状和发展趋势,介绍了光电对抗仿真试验系统的一般组成,给出了光电武器系统的常规试验内容和试验流程,并论述了可能采用的试验方法。     

移动网络中的独立式安全管理系统

本文提出一种适用于移动网络的安全管理系统,由于访问网络能够独立地对漫游用户进行认证,所以称该系统为独立式安全管理(ISM).基于ISM设计一种漫游用户的认证协议,通过对协议的比较分析可以看出,相对于其它安全管理系统,ISM的突出优点是安全责任划分清晰、认证效率高.     

浅谈我国电信企业市场营销策略

随着电信全球化发展的新趋势，国际竞争愈演愈烈，我国电信业面临更严峻的挑战，根据我国电信企业的行业特点，提出了全员营销、摒弃传统广告宣传方式、营建全新企业文化及拓宽范围，实行差别化经营等策略。     

农村通信如何"突围"

农村通信作为农村地区信息化的基础，对于全面建设小康具有特殊的重要地位。介绍了我国农村通信的发展现状，分析了农村通信发展的困难压其原因，最后对农村压边远、欠发达地区通信的均衡震展提出了一些建议。     

Flash器件中氧化硅/氮化硅/氧化硅的特性

对普遍采用的氧化硅/氮化硅/氧化硅( ONO)三层复合结构介质层的制备工艺及特性进行了研究分析,研究了ONO的漏电特性以及顶氧( top oxide)和底氧( bottom oxide)的厚度对ONO层漏电的影响.结果表明,采用较薄的底氧和较厚的顶氧,既能保证较高的临界电场强度,又能获得较薄的等效氧化层厚度,提高耦合率,降低编程电压.     

GaN-MOCVD设备反应室流场的CFD数值仿真

采用计算流体力学方法对生长半导体材料GaN的重要设备MOCVD(金属有机物化学气相沉积)反应室中的流场结构进行了三维数值仿真.数值模拟采用基于非交错网格系统的SIMPLE算法,用有限体积方法对控制方程进行离散,并采用改进的压力-速度耦合方法进行求解.数值仿真给出了具有复杂几何结构和运动方式的GaN-MOCVD反应室中的流场结构,研究了改变几何尺寸和运行参数对MOCVD反应室流场结构的影响,对正在试制开发中的MOCVD设备的几何结构的改进和运行参数的优化提出了指导性建议.     

计费帐务系统发展趋势分析

计费帐务系统作为业务运营支撑系统的重要组成部分。其发展方向日益受到运营商的关注。通过对计量帐务系统的研究，首先介绍了传统计费模式的现状以及存在的问题，然后结合各大公司产品对计责帐务系统的关键技术进行了分析，最后提出未来计费帐务系统的特征及对其发展趋势的展望。     

Temperature effects on surface activity and application in oxidation of toluene derivatives of CTAB-SDS with KMnO4

The γ_cmc values of CTAB-SDS decrease from 63.67 mN/m at 10‡C to 36.38 mN/m at 90‡C, slightly lower than those of either CTAB or SDS. Correspondingly, the CMC of CTAB-SDS decreases almost by half. The increase of surface activity of CTAB-SDS can be attributed to the relatively weak electrostatic interaction at high temperature, which is supported by the increase of solubility of CTAB-SDS with rise in temperature. Catalytic effect on oxidation of toluene derivatives with potassium permanganate follows the order CTAB-SDS > SDS > CTAB. This is not caused by the dissociative effect of CTAB-SDS with low surface activity at low temperature, as seen from the fact that almost all oxidative products can be retrieved for different toluene derivatives and surfactants by mimicking the conditions of reaction. In the emulsifications of toluene derivatives at 90‡C, the time that turbid water layers of surfactant solutions take to become clear is the same as that of the catalytic effect on oxidation of toluene derivatives. Thus, it can be inferred that surfactants can improve the oxidation yields of toluene derivatives by increasing the contact between two reacting phases.