现场总线技术在城市污水处理与气象中的应用

文章主要讨论了LonWorks现场总线技术在城市污水处理厂和气象指数预报中的应用。采用IPC和PLC控制结构对现场的各种设备实现控制和数据的采集，通过现场总线网络传输数据到中心控制室或远程终端，实现污水处理的自动控制和气象信息的实时采集和处理。     

一种有效的优化的多载波通信系统的功率分配算法

本文提出一种关于DMT系统传输纯数据流业务的最佳的功率分配算法，该算法使用了一种有效的表格查手工艺工和拉格朗日乘法器对分搜索办法，能够较快的收敛到最佳的功率点。同时，易于用硬件和软件实现。     

一种支持QoS的拓扑自适应动态组播路由算法

YAM、QoSMIC、DSDMR等一类支持QoS的动态组播路由算法允许组播成员动态地加入和离开，同时为接收方提供多个可选择的组播接入路径，以满足不同应用的QoS需求。但这些算法普遍存在控制信令开销大和结点加入时延长，可扩展性不好等问题。本文在分析这些算法的基础上，提出改进的支持QoS的动态组播路由算法，即拓扑自适应动态组播路由（Topology Adaptive Dynamic Multicast Routing，TADMR）算法。该算法避免了以往算法中大部分盲目的路径搜索，并使结点加入时延不再受限于固定的等待时钟，而与网络拓扑相自适应。性能分析和仿真结果表明，该算法具有较低的控制信令开销和结点加入时延，适用于各种网络规模和群组规模，具有良好的可扩展性。     

铁电存储场效应晶体管I-V特性的物理机制模拟

文章讨论的模型主要描述了铁电存储场效应晶体管（FEMFET）的I-V特性。从理论结果可反映出几何尺寸效应和材料参数对晶体管电特性的影响。传统的阈值电压的概念巳不再适用，由于铁电层反偏偶极子的开关作用，自发极化的增加对存储器的工作状态产生很小的影响。该模型可用于设计和工艺参数的优化，并由直观原型的方法得到了验证。     

SEPARATING SCN~- FROM DESULPHURIZATION WASTE SOLUTION OF COCKING PLANT BY D241 RESIN

1. INTRODUCTION In the process of coking plant, about 30%~35% sulfur is transformed to H2S and some other sulfide, which form impurity in coal gas together with NH3 and HCN. Only 0.1% H2S containing in air can lead to die, so it is very important to carry on desulphurization and decyanation with coal gas [1~3]. Currently desulphurization and decyanation craft technique have Dry Oxidation Technology, Wet Oxidation Technology and Liquid Absorption Technology [2] three main kinds. The…     

开设实验选修课培养学生创新能力

介绍了复旦大学物理教学实验中心为培养学生创新能力开设的4门实验选修课的特点、要求以及在培养学生创新能力方面取得的成效。     

(Anti-)de Sitter Black Hole Entropy and Generalized Uncertainty Principle

We generalize the method that is used to study corrections to Cardy-Verlinde formula due to generalized uncertainty principle and discuss corrections to Cardy-Verlinde formula due to generalized uncertainty principle in (anti)-de Sitter space. Because in de Sitter black hole spacetime the radiation temperature of the black hole horizon is different from the one of the cosmological horizon, this spacetime is a thermodynamical non-equilibrium spacetime.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Advances in micro-perforated panel absorbers

Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.     

Clifford分析中无界域上正则函数的边值问题

在引入修正Cauchy核的基础上,讨论了无界域上正则函数的带共轭值的边值问题：a(t)Φ (t) b(t)Φ (t) c(t)Φ-(t) d(t)Φ=g(t)．首先给出了无界域上正则函数的Plemelj公式,然后利用积分方程方法和压缩不动点原理证明了问题解的存在唯一性．