A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology     

产量──密度模型讨论

本文给出产量与密度函数关系     

堵塞效应与“全同带”的微观机制

利用处理推转壳模型的改进了的粒子数守恒方法(严格计及堵塞效应),对原子核的转动惯量进行了计算,计算中无任何自由参数,所得转动惯量(包括¹⁷⁰Yb,¹⁷¹Lu¹⁷¹Yb各转动带)及其奇偶差,与实验非常符合,转动惯量的奇偶差灵敏地依赖于被堵塞的能级位置及其对Coriolis力的响应。     

一种简便实用的视频特技切换器

本文介绍了一种用集成电路制作的特技切换器，具有成本低，线路简单，易于制作的特点。可以完成简单，基本的扫换，键控，特技效果和快切等功能。     

RS码频域纠错编码在激光对潜通信信道中的实现方法

介绍了信道编码在激光对潜通信系统中的重要作用，介绍了频域编译ＲＳ码的基本方法，并给出了脉冲位置调制信道的ＲＳ码频域编译码的计算机模拟方法和结果。     

用于频率合成器的低损耗声表面波滤波器

简述了产生声表面波滤波器插入损耗的主要机理和获得低损耗的原则；介绍了根据此原则对１００～５００ＭＨｚ５种滤波器的研制过程和结果。实验表明，采用镜像阻抗连接换能器结构可达到３～４ｄＢ的低损耗，并成功地应用于频率合成器中。     

Nd：MgO：LiNbO3晶体的荧光光谱及其双晶体腔内互倍频实验

采用激光感生荧光技术测量了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体的偏振荧光光谱，简要地说明了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３双晶体腔内互倍频的基本原理，并在实验中用染料激光作泵浦源实现了其双晶体腔内互倍频运转；得到５４３ｎｍ横模倍频绿光单端输出约ＹＭＷ，腔前泵浦阈值约３８ＭＷ，总转换效率约为１．３％。     

Influence of lattice self-heating and hot-carrier transport ondevice performance

As device technologies improve, the traditional drift-diffusion transport model becomes inadequate to predict the performance of state-of-the-art semiconductor devices. The reasons are believed to be the larger field and field gradient inside advanced devices which cause lattice heating and hot carrier nonlocal transport phenomena. For more accurate prediction on device performance, a new device simulator capable of full thermodynamic simulation was developed. The carrier and carrier energy transport equations are directly derived from the Boltzmann transport equation, and the energy transfer among electrons, holes and crystal lattice takes into account most of the possible mechanisms. This simulator was used to simulate the DC behavior of a BJT and a half-micron NMOS. The simulation results show that for advanced devices, not only the drift-diffusion model becomes inadequate, but including only one of the two thermal effects results in error in simulated device characteristics     

采用信息融合技术的IR／MMW复合导引头的目标跟踪

从误差测量环节入手，基于IR／MMW双模结构，采用信息融合处理技术提高其估计跟踪精度，最终达到降低制导误差，提高武器性能的目的，仿真结果验证了该方法的有效性。     

Synthesis of Nearly Monodisperse Iron Oxide and Oxyhydroxide Nanocrystals

Uniform magnetite, hematite, and goethite nanocrystals were prepared through an attractive method based on an oleic acid/alcohol/water system. By adjusting the synthetic parameters (base concentration, alcohol content, categories of alcohols, etc.), the controlled synthesis of uniform magnetite, hematite, and goethite nanocrystals can be easily achieved. Detailed investigations on the effect of the experimental parameters on the morphology of the final products and the phase transitions among the magnetite, hematite, and goethite phases were carried out. Finally, a method of doping other metal ions into magnetite was developed and the magnetic properties of magnetite doped with different metal elements were studied.