Lead chalcogenide quantum dot (QD) infrared (IR) solar cells are promising devices for breaking through the theoretical efficiency limit of single-junction solar cells by harvesting the low-energy IR photons that cannot be utilized by common devices. However, the device performance of QD IR photovoltaic is limited by the restrictive relation between open-circuit voltages (VOC) and short circuit current densities (JSC), caused by the contradiction between surface passivation and electronic coupling of QD solids. Here, a strategy is developed to decouple this restriction via epitaxially coating a thin PbS shell over the PbSe QDs (PbSe/PbS QDs) combined with in situ halide passivation. The strong electronic coupling from the PbSe core gives rise to significant carrier delocalization, which guarantees effective carrier transport. Benefited from the protection of PbS shell and in situ halide passivation, excellent trap-state control of QDs is eventually achieved after the ligand exchange. By a fine control of the PbS shell thickness, outstanding IR JSC of 6.38 mA cm−2 and IR VOC of 0.347 V are simultaneously achieved under the 1100 nm-filtered solar illumination, providing a new route to unfreeze the trade-off between VOC and JSC limited by the photoactive layer with a given bandgap. 相似文献
Imitating the structures and behaviors of natural creatures is of great significance to scientists to explore novel materials for practical applications. However, the design and fabrication of biomimetic devices with complex and outstanding performances is still on the way. A bilayer film composed of liquid crystalline networks (LCN) film and hydrochromic aggregation-induced-emission molecule-doped hydrophilic layer is prepared. Under different relative humidity, the composite film can deform and change fluorescence color simultaneously. The influence of the content of the hydrophilic matrix on the fluorescent property and humidity-responsive behaviors of the bilayer film is investigated. Thanks to the mechanical anisotropy provided by uniform-aligned LCN film, different modes of deformation of the bilayer film are achievable, like bending, curling, and twisting. More importantly, due to the independence of the LCN film and the non-mesogenic molecules brought by this bimorph strategy, complex alignment of the LCN film and modification by immiscible molecules are realized in a single LCN actuator. Based on the functional composite film, artificial flowers showing synergistic blooming and shape-changing is prepared. By regulating the molecular alignment of the LC mesogens of the LCN film, the artificial flowers can imitate various blooming behaviors of natural flowers like confederate jasmine and jade lotus. 相似文献
We present the design and analysis of G-band CMOS Wilkinson power dividers and dual balun for G-band communication and imaging systems. Miniature spiral and U-shaped four-way Wilkinson power dividers, which are based on three two-way Wilkinson power dividers, are designed and implemented. Miniature spiral dual balun, which is equivalent to an upper balun and a lower balun in parallel, is also designed and implemented for comparison. These devices are planar and symmetrical, and their main structure is implemented by the 2.34-µm-thick topmost metal to minimize the resistive loss. This leads to low insertion loss, and small amplitude imbalance (AI) magnitude and phase difference (PD) deviation. For instance, the spiral four-way Wilkinson power divider occupies 0.033 mm2 chip area and achieves S11 of???11.4 dB, S21 of???6.271 dB, S31 of???6.445 dB, S41 of???6.676 dB, and S51 of???6.111 dB at 180 GHz, one of the smallest chip areas and lowest insertion losses for four-way power dividers with similar operation frequency. The corresponding AI magnitude and PD deviation are 0.565 dB and 3.2°, respectively. Moreover, the spiral dual balun occupies 0.026 mm2 chip area and achieves S11 of???10.6 dB, S21 of???7.549 dB, S31 of???7.1 dB, S41 of???7.598 dB, and S51 of???7.352 dB at 180 GHz. The corresponding AI magnitude and PD deviation are 0.498 dB and 5.7°, respectively. The prominent results of the spiral and U-shaped four-way Wilkinson power dividers, and the spiral dual balun indicate that they are suitable for power division/combination in G-band systems.
A pre-ohmic micro-patterned recess process,is utilized to fabricate Ti/Al/Ti/TiN ohmic contact to an ultrathin-barrier(UTB) AlGaN/GaN heterostructure,featuring a significantly reduced ohmic contact resistivity of 0.56 Ω.mm at an alloy temperat-ure of 550 ℃.The sheet resistances increase with the temperature following a power law with the index of +2.58,while the spe-cific contact resistivity decreases with the temperature.The contact mechanism can be well described by thermionic field emis-sion (TFE).The extracted Schottky barrier height and electron concentration are 0.31 eV and 5.52 × 1018 cm-3,which suggests an intimate contact between ohmic metal and the UTB-AlGaN as well as GaN buffer.A good correlation between ohmic trans-fer length and the micro-pattern size is revealed,though in-depth investigation is needed.A preliminary CMOS-process-compat-ible metal-insulator-semiconductor high-mobility transistor (MIS-HEMT) was fabricated with the proposed Au-free ohmic con-tact technique. 相似文献