Interfacial characterization of chemical solution‐deposited thin films of PbSe on GaAs(100)

The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high‐resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x‐ray photoelectron spectroscopy (XPS) and energy‐filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga₂O₃ at the PbSe/GaAs interface. Copyright © 2008 John Wiley & Sons, Ltd.     

Silicon/molecule interfacial electronic modifications

Electronic structures at the silicon/molecule interface were studied by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, inverse photoemission spectroscopy, and Kelvin probe techniques. The heterojunctions were fabricated by direct covalent grafting of a series of molecules (-C6H4-X, with X = NMe2, NH2, NO2, and Mo6 oxide cluster) onto the surface of four types of silicon substrates (both n- and p-type with different dopant densities). The electronic structures at the interfaces were thus systematically tuned in accordance with the electron-donating ability, redox capability, and/or dipole moment of the grafted molecules. The work function of each grafted surface is determined by a combination of the surface band bending and electron affinity. The surface band bending is dependent on the charge transfer between the silicon substrate and the grafted molecules, whereas electron affinity is dependent on the dipole moment of the grafted molecules. The contribution of each to the work function can be separated by a combination of the aforementioned analytical techniques. In addition, because of the relatively low molecular coverage on the surface, the contribution from the unreacted H-terminated surface to the work function was considered. The charge-transfer barrier of silicon substrates attached to different molecules exhibits a trend analogous to surface band bending effects, whereas the surface potential step exhibits properties analogous to electron affinity effects. These results provide a foundation for the utilization of organic molecule surface grafting as a means to tune the electronic properties of semiconductors and, consequently, to achieve controllable modulation of electronic characteristics in small semiconductor devices at future technology nodes.     

Parallel biomolecular computation on surfaces with advanced finite automata

A biomolecular, programmable 3-symbol-3-state finite automaton is reported. This automaton computes autonomously with all of its components, including hardware, software, input, and output being biomolecules mixed together in solution. The hardware consisted of two enzymes: an endonuclease, BbvI, and T4 DNA ligase. The software (transition rules represented by transition molecules) and the input were double-stranded (ds) DNA oligomers. Computation was carried out by autonomous processing of the input molecules via repetitive cycles of restriction, hybridization, and ligation reactions to produce a final-state output in the form of a dsDNA molecule. The 3-symbol-3-state deterministic automaton is an extension of the 2-symbol-2-state automaton previously reported, and theoretically it can be further expanded to a 37-symbol-3-state automaton. The applicability of this design was further amplified by employing surface-anchored input molecules, using the surface plasmon resonance technology to monitor the computation steps in real time. Computation was performed by alternating the feed solutions between endonuclease and a solution containing the ligase, ATP, and appropriate transition molecules. The output detection involved final ligation with one of three soluble detection molecules. Parallel computation and stepwise detection were carried out automatically with a Biacore chip that was loaded with four different inputs.     

Theory of charge sensing in quantum-dot structures

Charge sensing in quantum-dot structures is studied by an exactly solvable reduced model and numerical density-matrix renormalization-group methods. Charge sensing is characterized by repeated cycling of the occupation of current-carrying states due to the capacitive coupling to trap states. In agreement with recent experiments, it results in characteristic asymmetric Coulomb-blockade peaks as well as sawtooth and domelike structures. Temperature introduces asymmetric smearing of these features and correlations in the conductance provide a fingerprint of charge sensing.     

Ruderman-Kittel-Kasuya-Yosida and magnetic-field interactions in coupled Kondo quantum dots

We investigate theoretically the transport properties of two independent artificial Kondo impurities. They are coupled together via a tunable Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. For strong enough antiferromagnetic RKKY interaction, the impurity density of states increases with the applied in-plane magnetic-field. This effect can be used to distinguish between antiferromagnetic and ferromagnetic RKKY interactions. These results may be relevant to explain some features of recent experiments by Craig et al. [Science 304, 565 (2004)].     

Grothendieck's theorem on non-abelian and local-global principles

A theorem of Grothendieck asserts that over a perfect field of cohomological dimension one, all non-abelian -cohomology sets of algebraic groups are trivial. The purpose of this paper is to establish a formally real generalization of this theorem. The generalization - to the context of perfect fields of virtual cohomological dimension one - takes the form of a local-global principle for the -sets with respect to the orderings of the field. This principle asserts in particular that an element in is neutral precisely when it is neutral in the real closure with respect to every ordering in a dense subset of the real spectrum of . Our techniques provide a new proof of Grothendieck's original theorem. An application to homogeneous spaces over is also given.

     

Progress in metric-affine gauge theories of gravity with local scale invariance

Einstein's general relativity theory describes very well the gravitational phenomena in themacroscopic world. In themicroscopic domain of elementary particles, however, it does not exhibit gauge invariance or approximate Bjorken type scaling, properties which are believed to be indispensible for arenormalizable field theory. We argue that thelocal extension of space-time symmetries, such as of Lorentz and scale invariance, provides the clue for improvement. Eventually, this leads to aGL(4, R)-gauge approach to gravity in which the metric and the affine connection acquire the status ofindependent fields. The Yang-Mills type field equations, the Noether identities, and conformal models of gravity are discussed within this framework. After symmetry breaking, Einstein's GR surfaces as an effective low-energy theory.Based on a plenary talk given by one of us (EWM) at the 53rd annual meeting of the Deutsche Physikalische Gesellschaft in Bonn on March 14, 1989.Supported by the German-Israeli Foundation for Scientific Research and Development (GIF), Jerusalem and Munich.Supported by the Deutsche Forschungsgemeinschaft (DFG), Bonn, project He 528/12-1.Supported in part by DOE Grant DE-FG05-85-ER40200.     

The absolute order of a permutation representation of a Coxeter group

A permutation representation of a Coxeter group W naturally defines an absolute order. This family of partial orders (which includes the absolute order on W) is introduced and studied in this paper. Conditions under which the associated rank generating polynomial divides the rank generating polynomial of the absolute order on W are investigated when W is finite. Several examples, including a symmetric group action on perfect matchings, are discussed. As an application, a well-behaved absolute order on the alternating subgroup of W is defined.