B（X）上保点谱的可加映射和初等算子

记Ｘ为复数域上无限维Ｂａｎａｃｈ空间，Ｈ为无限维复可分Ｈｉｌｅｒｔ空间。本文给出Ｂ（Ｘ）上保持点谱的满射可加射具有的形式，以及Ｂ（Ｈ）上某些初等算子保点谱的充要条件。     

优化路问题的代数方法—论动态规划（Ⅱ）

本文用同一思路求解多阶段有向图中三种优化路问题:最优路、N阶最优路及多指标Pareto优化路问题,它们都服从嘉量原理,都用同一个代数公式表达它们的嘉量,并可在同一种表格中进行计算,只是所在半域不同,以本文的方法讨论动态规划中一些离散决定型典型应用问题,其提法、建模思路以及求解过程都有可观的扩大与改善。     

Ge_x Si_(1-x)/Si超晶格中纵声学声子的喇曼散射强度研究

本文用光弹理论,在全面考虑了超晶格中两种材料的声速,质量密度和光弹常数存在差别的基础上,计算了Ge_xSi_(1-x)/Si超晶格中折迭纵声学声子的喇曼散射强度,在高达50cm~(-1)的频率范围内,理论值和实验符合得很好。     

同时含有稀土元素La Ce Pr Nd的材料的电子探针定量分析方法

研制了稀土六硼化物单晶LaB_6、CeB_6、PrB_6和NdB_6电子探针分析标样。根据X-射线峰位表和实测的特征X-射线谱,考察分析了La、Ce、Pr和Nd元素谱线之间的干扰情况,发现分析谱线PrLα_1受到L_αLβ_1线严重的干扰。以混合稀土金属为试样,采用扣除谱线重叠强度的背底非对称测量等方法对L_n、Ce、Pr和Nd进行了电子探针定量分析,其结果与荧光X-射线光谱分析结果符合较好。     

光纤定时恢复器用声表面波低损耗滤波器

介绍了定时恢复器对声表面波滤波器的基本要求及实现低损耗的方法，并给出了实验结果。     

真空微电子三极管几何参数的设计考虑

真空微电子三极管是近年来兴起与发展的真空微电子学中的一类重要器件。本文从真空微三极管的工作特性出发,分析了这类器件中所需考虑的几何参数和工作特性的关系,并给出了一些理论和实验公式,为今后的设计提供一些参考。     

Irradiation-induced reduction and luminescence properties of Sm doped in BaBPO5

Usually, Sm²⁺ ions could be reduced by heating the materials in reducing atmospheres. Exposure to ionizing radiations is also known to cause Sm³⁺→Sm²⁺ conversion. In this work, BaBPO₅ doped with the samarium ion was prepared by high temperature solid-state reaction. Sm²⁺ ions were obtained by two different reduction methods, i.e., heating in H₂ reduced atmosphere and X-ray irradiation. The measurements of X-ray diffraction (XRD), and scanning electron microscope (SEM) were investigated. It is found that the conversion of Sm³⁺→Sm²⁺ is very efficient in BaBPO₅ hosts after X-ray irradiation. Sm²⁺ ions under these two reduction methods exhibit different characteristics that were studied by measurements of luminescence and decay. The results showed that the luminescence properties of Sm²⁺ ions in BaBPO₅ were highly dependent on the sample preparation conditions.     

Synthesis of grafted poly(p‐phenyleneethynylene) with energy donor–acceptor architecture via atom transfer radical polymerization: Towards nonaggregating and hole‐facilitating light‐emitting material

In this contribution, we demonstrate a new effective methodology for constructing highly efficient and durable poly(p‐phenyleneethynylene) (PPE) containing emissive material with nonaggregating and hole‐facilitating properties through the introduction of hole‐transporting blocks into the PPE system as the grafting coils as well as building the energy donor–acceptor architecture between the grafting coils and the PPE backbone. Poly(2‐(carbazol‐9‐yl)ethyl methacrylate) (PCzEMA), herein, is chosen as the hole‐transporting blocks, and incorporated into the PPE system as the grafting coils via atom transfer radical polymerization. The chemical structure of the resultant copolymer, PPE‐g‐PCzEMA, was characterized by NMR and gel permeation chromatography, showing that the desirable copolymer was obtained with the narrow polydispersity. The increased thermal stability of PPE‐g‐PCzEMA was confirmed by thermogravimetric analysis and differential scanning calorimetry along with its macroinitiator. The optoelectronic properties of this copolymer were studied in detail by ultraviolet‐visible absorption, photoluminescence emission and excitation spectra, and cyclic voltammogram (CV). The results indicate that PPE‐g‐PCzEMA exhibits the solid‐state luminescent property dominated by individual lumophores, and also the energy transfer process from the PCzEMA blocks to the PPE backbone with a relatively higher energy transfer efficiency in the solid‐state compared to that of the solution state. Additionally, the hole‐injection property is greatly facilitated due to the presence of PCzEMA, as confirmed by CV profiles. All these data indicate that PPE‐g‐PCzEMA is a good candidate for use in optoelectronic devices. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3776–3787, 2007     

一种新型有机电致微腔结构的双模发射

采用结构Glass／DBR／ITO／NPB／NPB：Alq／Alq／Al制作了有机微腔电致发光器件。将空穴传输材料与发光材料以一定比例混合作为发光层，为了便于对比，在不改变有机层的膜厚的情况下同时制作了传统的异质结微腔器件，发现两种器件的发光光谱有很大不同，器件的复合效率与传统的异质结器件相比也得到了很大提高，这是因为将两种有机材料混合能消除界面势垒，提高器件的复合效率，从而提高了器件的发光性能，实现了微腔双模发射，且两个模式的半峰全宽分别为8nm和12nm。通过进一步优化器件结构可以实现微腔白光发射。