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31.
The magnetic properties of polyethersulfone-matrix composites with 3-19 vol.% polycrystalline nickel filaments (0.4 (im diam)
were investigated. These filaments were found to exhibit hysteresis energy loss 10800 J/m3 of nickel and coercive force 16.9 kA/m, compared to corresponding values of 4930 J/m3 and 4.7 kA/m for 2 μ.m diam polycrystalline nickel fibers, 1020 J/m3 and 0.5 kA/m for 20 μm diam polycrystalline nickel fibers, and 1280 J/m3 and 2.3 kA/m for solid polycrystalline nickel. 相似文献
32.
Won-Sang Chung 《International Journal of Theoretical Physics》2003,42(12):2941-2946
In this paper we use the bosonic realization of ospq(1/2) algebra to obtain its metaplectic representation. The group element for this algebra is shown to be described in terms of the basic hypergeometric function. 相似文献
33.
34.
Proton-exchanged planar waveguides were demonstrated in Z-cut LiNBO/sub 3/ using toluic acid as a new organic proton source. These waveguides exhibit a propagation loss of around 1 dB/cm, and a step refractive index profile with an index increase of 0.124 measured at 0.663 mu m. The diffusion rate was found to be lower than those obtained using the popular benzoic and phosphoric acids.<> 相似文献
35.
36.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
37.
Tahui Wang Chimoon Huang Chou P.C. Chung S.S.-S. Tse-En Chang 《Electron Devices, IEEE Transactions on》1994,41(9):1618-1622
A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at Vg ≃0.5 Vd in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states 相似文献
38.
A low frequency, injected beam, circular format crossed-field amplifier has been designed and constructed for the purpose of studying electron-radio frequency wave interaction in reentrant devices. The device has been designed to allow in situ diagnostic probe measurements in the space between the anode and sole. The device has been operated in nonreentrant, fully reentrant, and reentrancy controlled configurations. Details of the design and operating parameters are described. Device characteristics are examined with respect to the amount of circulating charge or degree of reentrancy. A large increase in gain has been achieved from nonreentrant to the fully reentrant format. A gain of 7.2 dB has been obtained for the latter whereas only 3.8 dB has been obtained for the former with 30 mA of injected beam current. A maximum gain of 14.4 dB has been achieved for the fully reentrant configuration. Electron beam and noise measurements versus the degree of reentrancy have also been examined. Results from the nonreentrant amplifier performance have been directly compared with the MASK simulation code and good agreement has been obtained. These experiments will provide the basis for more detailed investigations on the effect of reentrancy on CFA operation and will also allow for the development of more accurate computer models of the reentrant system for numerical simulation of CFA operation 相似文献
39.
Measurement and modeling of self-heating in SOI nMOSFET's 总被引:4,自引:0,他引:4
Su L.T. Chung J.E. Antoniadis D.A. Goodson K.E. Flik M.I. 《Electron Devices, IEEE Transactions on》1994,41(1):69-75
Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries 相似文献
40.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron
spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace
and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the
Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed
at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2. 相似文献