An expedient synthesis of an isofervenulin analogue

An efficient approach has been developed for the synthesis of an isofervenulin analogue 1 employing a one‐pot condensation‐substitution reaction of a chlorocarboethoxytriazine (electrophile) with a urea (nucleophile). The resulting cyclization reaction resulted in the synthesis of a pyrimido‐heterocycle in good yield in either acidic or basic media. The former was assisted by utilizing trimethylsilyl chloride.     

Phase formation and control of morphology in sputtered Cu-In alloy layers

The dependence of structural properties and surface morphology of Cu-In alloy layers on the composition and sputtering deposition sequence were investigated by X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The properties of the co-sputtered alloy layers changed abruptly around the composition boundary when the Cu/In ratio reached 1/2. This can be explained by the effective heat of formation (EHF) model, which has been used to predict the sequence of phase formation for metal diffusion couples. The use of a co-sputtered alloy layer with a high In concentration was not suitable for fabricating solar cells, because the film had a very rough morphology due to large In islands formed on the CuIn₂ phase. However, it was possible to minimize this phase by In sputtering followed by co-sputtering with a Cu/In ratio of 1 (Cu-In/In/Glass). This permitted the fabrication of a homogeneous Cu-In alloy layer, which was not possible through the simple co-sputtering.     

Laplacians and the Cheeger Inequality for Directed Graphs

We consider Laplacians for directed graphs and examine their eigenvalues. We introduce a notion of a circulation in a directed graph and its connection with the Rayleigh quotient. We then define a Cheeger constant and establish the Cheeger inequality for directed graphs. These relations can be used to deal with various problems that often arise in the study of non-reversible Markov chains including bounding the rate of convergence and deriving comparison theorems.Received September 8, 2004     

Quantum Dynamics of Systems Connected by a Canonical Transformation

Quantum Hamiltonian systems corresponding to classical systems related by a general canonical transformation are considered. The differential equation to find the unitary operator, which corresponds to the canonical transformation and connects quantum states of the original and transformed systems, is obtained. The propagator associated with their wave functions is found by the unitary operator. Quantum systems related by a linear canonical point transformation are analyzed. The results are tested by finding the wave functions of the under-, critical-, and over-damped harmonic oscillator from the wave functions of the harmonic oscillator, free-particle system, and negative harmonic potential system, using the unitary operator to connect them, respectively.     

A systematic design method to obtain broadband characteristics for singly-fed electromagnetically coupled patch antennas for circular polarization

We present a systematic, empirical design technique to obtain optimum broadband impedance, axial-ratio (AR) and gain bandwidths for a singly-fed electromagnetically coupled patch antenna for circular polarization. Our investigation has also revealed tradeoffs amongst obtainable AR, impedance bandwidth and AR bandwidth. Using two design examples at different frequency bands and for different senses of circular polarization, we have demonstrated the effectiveness of the proposed knowledge-based tuning method. We have obtained at C-band measured values of impedance bandwidth (VSWR/spl les/2) equal to 43%, 3-dB AR bandwidth of 8%, AR of less than 0.3 dB and a mean gain level of 7 dB. For the Ku-band element, a 40% impedance bandwidth and a 17.3% of 3-dB AR bandwidth have been obtained with a peak gain of 7.2 dBic.     

Proton-exchanged LiNbO/sub 3/ optical waveguides using stearic acid

Proton-exchanged optical waveguides have been fabricated in z-cut LiNbO/sub 3/ using a new proton source: stearic acid. These waveguides were characterized optically and were found to exhibit a step index profile with Delta n=0.118 measured at 0.633 mu m. The propagation losses were typically around 1.5 dB/cm, and the diffusion constant and the activation energy for the proton-exchange process were measured to be 5*10/sup 6/ mu m/sup 2//h and 69 kJ/mol, respectively.<>     

Spectral characteristics of vertical-cavity surface-emitting lasers with external optical feedback

The measurement of the effects of external optical feedback on the spectra of VCSELs (vertical-cavity surface-emitting lasers) is reported. It is surprising that VCSELs have a sensitivity to optical feedback comparable to that of conventional edge-emitting lasers such as DFBs despite their significantly different structures. This is because the extremely short cavity length of VCSELs negates the effects of their highly reflective output mirrors. As in edge-emitting lasers, VCSELs exhibit well-defined regimes of feedback effects in their spectra. Since optical isolators cannot be easily applied to VCSELs due to their array structure, these lasers may be most useful in applications which are not sensitive to the spectral qualities of the light source.<>     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology