Synthesis and characterization of new light‐emitting copolymers in polymeric‐light‐emitting‐diode device fabrications

A series of thiophene‐containing photoactive copolymers consisting of alternating conjugated and nonconjugated segments were synthesized. The ¹H NMR spectra corroborated the well‐defined structures, and the copolymers not only were soluble in common organic solvents but also had high glass‐transition temperatures (ca. 130 °C) and good thermal stability up to 390 °C. Introducing aliphatic functional groups, such as alkyl or alkoxyl, into chromophores of the copolymers redshifted the photoluminescence spectra and lowered the optical bandgaps. The electrochemical bandgaps calculated from cyclic voltammetry agreed with the optical bandgaps and thus indicated that electroluminescence and photoluminescence originated from the same excited state. The energy levels (highest occupied molecular orbital and lowest unoccupied molecular orbital) of all the copolymers were lower than those of poly[2‐methoxy‐5‐(2′‐ethylhexyloxy)‐1.4‐phenylenevinylene] MEH–PPV, indicating balanced hole and electron injection, which led to improved performance in both single‐layer and double‐layer polymeric‐light‐emitting‐diode devices fabricated with these copolymers. All the copolymers emitted bluish‐green or green light above the threshold bias of 5.0 V under ambient conditions. At the maximum bias of 10 V, the electroluminescence of a device made of poly(2‐{4‐[2‐(3‐ethoxy phenyl)ethylene]phenyl}‐5‐{4‐[2‐(3‐ethoxy,4‐1,8‐octanedioxy phenyl)ethylene]phenyl}thiophene) was 5836 cd/m². The external electroluminescence efficiency decreased with the lifetime as the polymer degraded. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 3954–3966, 2004     

Kaluza-Klein unification in the poincaré gauge theory of gravitation

We show that we can unify the gravitational and internal gauge interactions in a high dimensional Riemann-Cartan spacetime in the spirit of Kaluza-Klein, if we identify some of the connection coefficients as Yang-Mills potentials and if the dynamics of the spacetime is governed by the Poincaré gauge theory of gravitation whose lagrangian contains curvature and torsion squared.     

数学抽象度概念与抽象度分析法

§1 引言 本文将给出“数学抽象度”的一般概念并论述“抽象度分析法”的基本概要。 如所熟知,抽象是认识事物本质、掌握事物内在规律的方法。凡科学中的一切概念都是抽象过程的产物,而且都有不同程度的抽象性。数学中的许多概念的抽象性更是明显地经过一系列阶段而产生的。例如,整数、有理数、无理数、复数、函数、微分、积分、变分、泛函、范畴等这些概念的抽象性几乎是一个高于一个。这说明数学内部各个概念的抽象程度是不一样的。在本文中我们要引进抽象度概念,用以刻划一个概念的抽象性层次;     

The phenylcarbene rearrangement revisited

The evolution of mechanistic ideas about the phenylcarbene rearrangement has been reviewed, and three closely linked problems have been identified toward whose solution this research has been aimed: 1. Why do the ratios of the stable end products from the rearrangements of o-, m- and p-tolylmethylene differ when all three reactions have been throught to pass through a common intermediate? 2. Why does the rearrangement of 2-methylcycloheptatrienylidene lead to exclusive formation of styrene? 3. What is the mechanism of styrene formation from o-tolylmethylene? New mechanisms have been proposed in which m- and p-tolylmethylene can rearrange to styrene without necessarily being converted to o-tolylmethylene. The formation of a small amount of 2,6-dimethylstyrene from the rearrangement of 3,4,5-trimethylphenylmethylene is viewed as evidence for such a mechanism, and a set of interconverting norcaradienylidenes are believed to be the crucial intermediates. Other alternatives are considered and rejected on the basis of the rearrangement products of 3,5-dimethyl- and 3,4,5-trimethylphenylmethylene.     

Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures

Material and optical analyses of three InGaN/GaN quantum-well (QW) samples with different silicon-doping conditions were conducted. Quantum-dot (QD) structures were observed in samples of silicon doping either in barriers or wells. The calibrated-radiative lifetimes in both silicon-doped samples showed the consistent trend of the formation of zero-dimensional (0-D) structure upon silicon doping. In optical characterization, the barrier-doped sample showed a blueshift of the photoluminescence (PL) peak, enhancement of integrated PL intensity, reduction of Stokes shift (SS), decrease of carrier-activation energy, and shortening of PL decay time. Except the insignificant PL peak shift, the well-doped sample showed similar trends, although they are not as prominent as the barrier-doped sample. Such results mainly originated from the reduction of the quantum-confined Stark effect (QCSE) within the clusters. Contrary to the interpretation in the past, the major mechanism for QCSE reduction is due to strain relaxation, instead of carrier screening, in conjunction with the formation of QD structures. Such a conclusion is supported by the result of smaller changes of optical behavior in the well-doped sample, in which carrier screening is expected to be more significant. In this sample, besides strain relaxation, enhanced carrier localization (CL) might represent another important mechanism for photon-emission improvement.     

Thin polyoxide on the top of poly-Si gate to suppress boronpenetration for pMOS

A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF₂⁺ in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics     

Full-wave characterization of a through hole via in multi-layeredpackaging

A full-wave analysis is presented for the propagation characteristics of a through hole via connecting two semi-infinitely long transmission lines in multi-layered packaging environment. The current distribution on the via and a section of transmission line is solved under the thin wire approximation by the moment method and the scattering parameters are extracted by the matrix pencil method. The Green's function in multilayer packaging environment is derived by applying the image theory and evaluated by the help of the Poisson summation formula. Numerical results are included to investigate the frequency dependent propagation characteristics for via structures with various geometrical parameters, e.g., the via height, wire diameter, and distance between two ground planes. The excitation of the radial waves due to the current distribution on the via is also discussed in detail     

Analysis of coplanar waveguide-fed microstrip antennas

A moment method analysis of a microstrip antenna fed by an open-end coplanar waveguide is presented. The surface electric current on the microstrip antenna is represented by the entire domain basis functions, while the surface magnetic currents in the open-end slot and in the slots of the coplanar waveguide near the open end are expanded by the subsectional roof-top basis functions. Some practical numerical aspects are carefully discussed, and a numerical device is introduced to reduce the computation time for the integrals involving roof-top basis functions and the spectral-domain Green's function. The solution accuracy is thus improved. Computed results for the reflection coefficients and input impedances are given and compared with measured values. Good agreement between theory and experiment is obtained     

On polynomial reciprocity law

The well-known law of quadratic reciprocity has over 150 proofs in print. We establish a relation between polynomial Jacobi symbols and resultants of polynomials over finite fields. Using this relation, we prove the polynomial reciprocity law and obtain a polynomial analogue of classical Burde's quartic reciprocity law. Under the use of our polynomial Poisson summation formula and the evaluation of polynomial exponential map, we get a reciprocity for the generalized polynomial quadratic Gauss sums.     

Flattened Broadband Notch Filters Using Guided-Mode Resonance Associated With Asymmetric Binary Gratings

In this letter, the broadband notch filter exhibiting a flattened bandstop spectral response is experimentally demonstrated for the first time by using the guided-mode resonance associated with the periodic subwavelength structure possessing asymmetric binary grating profiles. The proposed filter consisting of grating and waveguide structures is realized by utilizing a single-layer poly-silicon film deposited on a quartz substrate. The asymmetric grating profile is carried out by dividing the one-filling-factor binary structure into the one with two distinct filling factors within one identical period. A flat bandstop spectral response at the central wavelength of 1.22 mum is obtained under normal incidence for transverse-electric polarization. Its transmittance of bandstop spectrum can be suppressed as low as -20dB within a broad spectral range of 85 nm and its corresponding Deltalambda/lambda is larger than 6%. The spectra under oblique incidence are demonstrated to verify the proposed filter has a high immunity for the angular deviation up to 20deg