富氧氮氧化硅薄膜退火的研究

利用红外吸收(IR)谱和X射线光电子谱(XPS)对富氧氮氧化硅(oxygen-rich SiOxNy)及其在600、750和900℃下退火后样品的微结构进行了研究.实验中除观察到N、H的释放外,首次发现退火会导致SiOxNy中O的释放,同时还发现退火温度不同,H、O、N元素的释放量以及微结构的变化都不相同,根据这些现象,提出了5个化学反应过程并予以解释.     

一种基于Meta分析固定效应模型的简明统计学方法

为了让临床医生更方便地使用M eta分析方法,我们根据四格表数据特点,提出了一种基于固定效应模型的简明方法。该方法简单而容易操作,且统计结果与原方法完全等价,在循证医学领域很有推广价值。     

Phonon–replica transitions in InGaN/GaN quantum well structures

A side-bump feature in a photoluminescence (PL) spectrum of an InGaN compound was widely observed. With reasonable fitting to PL spectra with three Gaussian distributions, the temperature variations of the peak positions, integrated PL intensities, and peak widths of the main and first side peaks of three InGaN/GaN multiple quantum well samples with different nominal indium contents are shown and interpreted. The existence of the side peaks is attributed to phonon–replica transitions. The variations of the peak position separations and the decreasing trends of the first side peak widths beyond certain temperatures in those samples were explained with the requirement of phonon momentum condition for phonon–replica transitions. In the sample with 25% nominal indium content, the phonon–replica transition could become stronger than the direct transition of localized states.     

高效率窄线宽光纤激光器

本文报道了一种环形腔掺饵光纤激光器，得到了泵浦效率高达22.6%，输出线宽小于0.1nm的激光输出。     

改进形态学相关算法以识别高相似度灰度图像

从形态学角度定义了灰度联合图像相似度，提出两种基于位表示法形态学相关算法的改进算法，通过提取位表示法的图像片边缘特征或二元化位表示法的图像片功率谱，以提高位表示法形态学相关算法对高相似度灰度图像的识别能力。     

Tunneling Radiation of a Torus-Like Black Hole in Anti-de Sitter Space-Time

An extension of the Parikh-Wilczek's semi-classical quantum tunneling method, the tunneling radiation of the charged particle from a torus-like black hole is investigated. Difference from the uncharged mass-less particle, the geodesics of the charged massive particle tunneling from the black hole is not light-like, but determined by the phase velocity. The derived result shows that the tunneling rate depends on the emitted particle's energy and electric charge, and takes the same functional form as uncharged particle. It proves also that the exact emission spectrum is not strictly pure thermal, but is consistent with the underlying unitary theory. PACS Numbers: 04.70.Dy, 97.60.Lf, 05.30.Ch.     

CH分子束的强度与CH_4/He混合配比的关系及CH(A~2Δ)振转温度的计算

为了获得CH分子束及其相关特性,以氦气为载气,利用直流脉冲放电技术产生了CH分子束。实验记录了放电时间相对于脉冲分子束不同延时CH光谱信号强度的变化,放电相对延时为460μs左右获得最大的信号强度。研究了在保持CH4/He总气压3 atm和放电电压-4 kV不变的条件下CH分子束强度与不同配比的关系,建立了理论模型,对实验数据进行了理论拟合,拟合曲线与实验结果符合较好,配比为1%(甲烷与氦的气压比为1∶99)左右能够维持较稳定的放电现象和较强的放电强度而获得较强的CH自由基束流。在这一配比下对CH(A2Δ-X2Π)(0,0)带发射光谱进行探测和分析,获得CH(A2Δ)转动温度和振动温度分别为2455 K和4575 K,并估计此时每个脉冲中大约包含1013~1014个CH自由基。     

A family of maximal surfaces in Lorentz-Minkowski three-space

We prove the existence of an infinite family of complete spacelike maximal surfaces with singularities in Lorentz-Minkowski three-space and study their properties. These surfaces are distinguished by their number of handles and have two elliptic catenoidal ends.

     

Influence of focusing depth on the microfabrication of waveguides inside silica glass by femtosecond laser direct writing

We studied the influence of focusing depth on the index change threshold and damage threshold of silica glass irradiated by a focused 120 fs laser beam. Both thresholds increased with the focusing depth. The aspect ratio of the waveguide cross section can be selected by changing the focusing depth. A 5 mm long waveguide was written at the depth of 2100 μm, which was single mode at 632.8 nm and exhibited propagation loss of 0.56 dB/cm. The refractive index change was calculated to be ∼2.47×10^-3. The influence of the focusing depth should be considered in multi-layer devices as shown in the fabrication of a 3×3 waveguide array. PACS 42.62.-b; 42.82.Et; 81.05.Kf     

高压热处理对氧沉淀低温形核的影响

研究了外加高压(1GPa)下对450℃热处理硅片中氧沉淀行为的影响.透射电镜观察表明相对于大气压下热处理的样品,高压处理的样品会产生密度更高、尺寸更小的氧沉淀,表明高压有利于小直径氧沉淀的生成.电学性能测试表明,高压下处理的样品其热施主生成浓度和生成速率远远高于常压下处理的样品,这表明热施主与低温热处理过程中生成的高浓度氧沉淀核心有密切的关系.