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101.
102.
103.
薄膜磁头磁轭制备工艺研究 总被引:1,自引:1,他引:0
本文重点讨论了用不同的工艺方法来制备薄膜磁头中的关键元件-磁轭。采用多次光刻的方法克服湿法工艺中磁性膜NiFe层的侧向钻蚀问题,从而实现对磁轭几何尺寸的精确控制,并对几种工艺方法的优缺点作了比较详细的分析。 相似文献
104.
Enhao Yang 《应用数学学报(英文版)》1994,10(2):158-168
Some new linear and nonlinear integral inequalities of Volterra-type inn independent variables are established. They improve and contain the main results of A. Corduneanu[7] which in turn extend a number of known results in the literature. An application to certain initial value problem of partial differential equation is also indicated. 相似文献
105.
Surface waves due to a current source on a grounded ferrite slab are investigated. Electromagnetic fields of the structure are in terms of a continuous plane wave spectrum. The spectrum of each field component is obtained numerically through the exponential-matrix method. The surface waves of the structure are extracted from the continuous spectrum by using the residue theorem and the method of steepest descent. Two types of surface waves are found and their properties are described. The surface wave modes found include dynamic surface wave modes which are closely related to the surface waves of a grounded dielectric slab, and magnetostatic surface wave modes which are related to the solution of Laplace's equation for the magnetic potential 相似文献
106.
The authors reply to the comments by Koppelaar and Tolhuizen (see ibid. vol.46, no.9, p.573, 1998). They state that the optimum choice of the slopes used to perform the encoding process in a projection code always results in maximizing the minimum Hamming distance so that d=2 r 相似文献
107.
由于悬空侧壁部分的变形状态是圆锥形零件成形的关键,而径向拉应力是实现悬空部分成形的必要条件,同时也是该部分冲压成形成败的关键为此,经力学分析得出了侧壁部分径向拉应力的解析式和造成圆锥形零件破裂的最大径向拉应力的计算式。同时分析了圆锥形零件的成形载荷。 相似文献
108.
用Q-YAG激光的三次谐波(355nm)与调谐的Rh·6G染料激光在β-BaB2O4(BBO)晶体中和频,获得217.3~221.4nm连续调谐输出,和频输出的最大能量为250μJ,转换效率为11%.我们还讨论了获取最大和频输出能量的一些实验条件. 相似文献
109.
The blends composed of polyamide 6 (PA6) and polyamide 66 (PA66) were obtained using two different preparation methods, one of which was the melt‐mixing through a twin‐screw extruder and the subsequent injection molding; and the other, the in situ blending through anionic polymerization of ε‐caprolactam in the presence of PA66. For the former, there existed a remarkable improvement in toughness but a drastic drop in strength and modulus; however, for the latter, a reverse but less significant trend of mechanical properties change appeared. Various characterizations were conducted, including the analyses of crystalline morphology, crystallographic form, and crystallization and melting behaviors using polarized optical microscopy (POM), wide‐angle X‐ray diffraction (WAXD), and differential scanning calorimetry (DSC), respectively; observation of morphology of fractured surface with scanning electron microscope (SEM); measurement of glass transition through dynamic mechanical analysis (DMA); and the intermolecular interaction as well as the interchange reaction between the two components by Fourier transform infrared spectrometry (FT‐IR) and 13C solution NMR. The presence and absence of interchange reaction was verified for the in situ and melt‐mixed blends, respectively. It is believed that the transreaction resulted in a drop in glass transition temperature (Tg) for the in situ blends, contrary to an increase of Tg with increasing PA66 content for the melt‐mixed ones. And the two kinds of fabrication methods led to significant differences in the crystallographic form, spherulite size and crystalline content and perfection as well. Accordingly, it is attempted to explain the reasons for the opposite trends of changes in the mechanical properties for these two blends. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1176–1186, 2007 相似文献
110.
Yang Wang Mansour N. Salem A. Brennan K.F. Ruden P.P. 《Quantum Electronics, IEEE Journal of》1992,28(2):507-513
The authors present a theoretical analysis of a possible avalanching photodetector (APD)-based on II-VI compound semiconductors. Each unit cell is composed of a HgTe layer, or a similar semimetal, sandwiched between two layers of CdTe and HgCdTe or similar semiconducting materials. The barrier layers are graded so that the leading barrier height is just high enough to eliminate the thermionic emission dark current out of the well. The use of a semimetal within the well has a distinct advantage over a semiconductor, which is that the ionization process is essentially an interband mechanism since the confined carriers within the well lie within the overlapping conduction and valence bands. As a result, the concentration of target carriers is virtually inexhaustible as in a conventional interband device 相似文献