解可分离约束双凹规划问题的一种外逼近方法[英文]

在本文中，我们提出了双凹规划问题和更一般的广义凹规划问题。我们给出了双凹规划问题的整体最优性条件，并构造了一个有限终止外逼近算法。     

通过直接栅电流测量研究PMOSFET's热载流子损伤

通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中PMOSFET's热载流子损伤的生长规律.由此,给出了热载流子引起PMOSFET's器件参数退化的准确物理解释.并证明了直接栅电流测量是一种很好的研究器件损伤生长和器件参数退化的实验方法.     

npn AlGaN/GaN HBT模型与特性分析

基于实验数据对GaN材料的少子寿命和碰撞电离率进行了建模,应用漂移-扩散传输模型开展了npnAlGaN/GaN异质结双极晶体管的特性研究,给出了器件导通电压、偏移电压和饱和电压的解析式.结果表明:实际器件导通电压、偏移电压及饱和电压较大的原因主要是高基区电阻和基区接触的非欧姆特性,为器件的工艺制造提供了理论指导.     

Development of a low cost microwave mixer using a broad-band substrate integrated waveguide (SIW) coupler

A low cost single-balanced mixer is designed using a newly designed 90/spl deg/ substrate integrated waveguide (SIW) 3-dB coupler, which takes the advantages of low cost, low profile, and high performance. An X-band single-balanced SIW mixer is designed and fabricated with a standard printed circuit board process. Measured conversion loss of 6.8dB and the wide-band response from 8.5 to 12GHz are presented.     

MCM用氮化铝共烧多层陶瓷基板的研究

通过实验优化AlN(氮化铝)瓷料配方及排胶工艺,对共烧W(钨)导体浆料性能及AlN多层基板的高温共烧工艺进行了研究,并对AlN多层基板的界面进行了扫描电镜分析。采用AlN流延生瓷片与W高温共烧的方法,成功地制备出了高热导率的AlN多层陶瓷基板,其热导率为190 W/(m·K),线膨胀系数为4.6106℃1(RT~400℃),布线层数9层,W导体方阻为9.8 m,翘曲度为0.01 mm/50 mm,完全满足高功率MCM的使用要求。     

Design, modeling, and hardware correlation of a 3.2Gb/s/pair memory channel

With the rapid advance of silicon process technology, it is now possible to design input/output (I/O) circuits that operate at multigigabit data rates. As a result, accurate modeling and analysis of high-speed interconnect systems is essential to optimize the performance of the overall system. This paper describes the interconnect design, modeling, simulation, and characterization methodologies that are essential to achieve multigigabit data rates. It focuses on the physical layer verification and hardware correlation of functional systems and silicon to ensure robust system operation over 3.2Gb/s data rate using conventional low-cost packaging and printed circuit board (PCB) technologies. In order to capture conductor and dielectric losses, as well as other high-frequency effects of three-dimensional structures, accurate measurement-based simulation techniques that directly incorporate frequency-domain parameters from measurement or electromagnetic solver parameters into circuit simulation tools using fast Fourier transform (FFT) and bandlimiting windowing techniques are developed. Finally, simulation waveforms are correlated with prototypes at both component and system levels in both time and frequency domains.     

Studies on self-pumped phase conjugation in Cu-doped (K0.5Na0.5)0.2(Sr0.61Ba0.39)0.9Nb2O6 crystals

The use of Cu-doped (K_0.5Na_0.5)_0.2(Sr_0.61Ba_0.39)_0.9Nb₂O₆ as self-pumped phase conjugators using internal reflection is reported. Reflectivities as high as 63% at 5145.5 nm and 60% at 632.8 nm were realized. It was found that the photorefractive response changes significantly at different doping concentration. The responses of the crystals to the laser wavelength, incident angle and dopant concentration are studied.     

Impedance boundary conditions in a hybrid FEM/MOM formulation

When numerically modeling structures with imperfect conductors or conductors coated with a dielectric material, impedance boundary conditions (IBCs) can substantially reduce the amount of computation required. This paper incorporates the IBC in the finite-element method (FEM) part of a FEM/method of moments (FEM/MoM) modeling code. Properties of the new formulation are investigated and the formulation is used to model three practical electromagnetic problems. Results are compared to either measured data or other numerical results. The effect of the IBC on the condition number of hybrid FEM/MoM matrices is also discussed.     

微分脉冲溶出伏安法同时测定食品中的锌铁锰

在1％乙二胺-0．1mol／L酒石酸钠-pH11．82 Britton—Robinson缓冲溶液体系中用微分脉冲溶出伏安法同时测定锌、铁、锰三种微量元素。它们的峰电位分别为-1184，-1392和-1456mV(vs．Ag/AgCl)；线性范围分别为：0.001—0.015，0．005—0．05和0．04—0．7μg／mL，最低检出浓度分别为0．0007，0．0014和0．0193μg／mL。本法操作简便、准确、灵敏度较高，用于食品中这三种元素的分析，结果令人满意。