Fuzzy集的基数

关于Fuzzy集的基数，[1]中曾对有限支集的Fuzzy集以及极苛刻条件下的无限Fuzzy集给出过一种定义。但是，正如本文将要指出的那样，该定义是不合理的。本文将从研究Fuzzy映射入手，给出Fuzzy集基数的一般性定义。基于这一定义，不但得到有关基数的大部分结论，而且有其自身的特殊性。     

JEC-FDTD for 2-D conducting cylinder coated by anisotropic magnetized plasma

The JE convolution finite-difference-time-domain (JEC-FDTD) method is extended to the anisotropic magnetized plasma which incorporates both anisotropy and frequency dispersion at the same time, enabling the transient solution of the electromagnetic wave propagation in anisotropic magnetized plasmas. Two-dimensional JEC-FDTD formulations for magnetized plasma are derived. The back scattering radar cross section (RCS) of a perfectly conducting cylinder coated by a layer of magnetized plasmas is calculated.     

MOS RF reliability subject to dynamic voltage stress-modeling and analysis

Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of dc stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance.     

Design, modeling, and hardware correlation of a 3.2Gb/s/pair memory channel

With the rapid advance of silicon process technology, it is now possible to design input/output (I/O) circuits that operate at multigigabit data rates. As a result, accurate modeling and analysis of high-speed interconnect systems is essential to optimize the performance of the overall system. This paper describes the interconnect design, modeling, simulation, and characterization methodologies that are essential to achieve multigigabit data rates. It focuses on the physical layer verification and hardware correlation of functional systems and silicon to ensure robust system operation over 3.2Gb/s data rate using conventional low-cost packaging and printed circuit board (PCB) technologies. In order to capture conductor and dielectric losses, as well as other high-frequency effects of three-dimensional structures, accurate measurement-based simulation techniques that directly incorporate frequency-domain parameters from measurement or electromagnetic solver parameters into circuit simulation tools using fast Fourier transform (FFT) and bandlimiting windowing techniques are developed. Finally, simulation waveforms are correlated with prototypes at both component and system levels in both time and frequency domains.     

Parity violation at neutron p-wave resonances of238U and232Th and related questions

Parity violation effects have been studied at 40 neutron p-wave resonances of the even-even nuclei²³⁸U and²³²Th. Of these 11 show parity violation effects larger than 2 standard deviations, making parity violation a rather common phenomenon. Parity mixing up to 10% has been found. The root-mean squared matrix elements for parity violation derived from these resonances are M=0.58 (+0.50/-0.25) meV for²³⁸U, respectively 1.39 (+0.35/-0.38) meV for²³²Th.     

MEMS技术对火控系统的影响

结合火控系统的发展趋势 ,说明了MEMS技术在火控系统中的应用 ,分析了MEMS技术在机械结构、系统性能以及体系结构等方面对火控系统的影响     

CMOS artificial subretinal chip for natural light illumination

A novel CMOS oscillating pixel array for subretinal prosthesis used in natural light illumination is presented. Its prototype chips are fabricated in a standard 0.6 /spl mu/m CMOS technology. Experimental results show the device can deliver effective self-oscillation for subretinal electrical stimulation.     

Difference in micellar properties of sodium dodecyl sulfonate from sodium 4-decyl naphthalene sulfonate in D2O solution studied by 1H NMR relaxation and 2D NOESY

¹H chemical shift changes of sodium 4-decyl naphthalene sulfonate (SDNS) at 313 K show that its critical micellar concentration lies between 0.82 and 0.92 mmol/dm³, which is in the same range as that of the previous study at 298 K. The spin–lattice relaxation time, spin–spin relaxation time and two-dimensional nuclear Overhauser enhancement spectroscopy experiments give information about the structure of the SDNS micelle and the dynamics of the molecules in the micelle. The size of the SDNS micelle remains almost unchanged in the temperature range from 298 to 313 K as deduced by analyzing the self-diffusion coefficient. Special arrangement of the naphthyl rings of SDNS in the micelles affects the packing of these hydrophobic chains. The methylene groups of the alkyl chain nearest the naphthalene groups penetrate into the aromatic region, which results in a more tightly packed hydrophobic micellar core than that of sodium dodecyl sulfonate.