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151.
The magnetic and electric properties of the Sr2FeMoO6 compound produced under different preparation conditions were studied. Depending on the preparation condition, a strong variation in the nonmagnetic SrMoO4 impurity content was found, which in turn determined the metallic or semiconducting behavior of the resistivity of the Sr2FeMoO6 compound. There was also evidence that SrMoO4 played a crucial role in modifying the low magnetic field intergrain tunneling magnetoresistance in Sr2FeMoO6. In addition, we have established a simple method to prepare the single phase Sr2FeMoO6 polycrystals. 相似文献
152.
153.
介绍WDM系统光节点所用到的器件,如波长转换器、光分插复用器及其使用的光隔离器和光环形器. 相似文献
154.
155.
Lijun Xu Naichang Yuan 《Microwave and Wireless Components Letters, IEEE》2005,15(12):892-894
The JE convolution finite-difference-time-domain (JEC-FDTD) method is extended to the anisotropic magnetized plasma which incorporates both anisotropy and frequency dispersion at the same time, enabling the transient solution of the electromagnetic wave propagation in anisotropic magnetized plasmas. Two-dimensional JEC-FDTD formulations for magnetized plasma are derived. The back scattering radar cross section (RCS) of a perfectly conducting cylinder coated by a layer of magnetized plasmas is calculated. 相似文献
156.
Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of dc stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance. 相似文献
157.
Beyene W.T. Xingchao Yuan Cheng N. Hao Shi 《Advanced Packaging, IEEE Transactions on》2004,27(1):34-44
With the rapid advance of silicon process technology, it is now possible to design input/output (I/O) circuits that operate at multigigabit data rates. As a result, accurate modeling and analysis of high-speed interconnect systems is essential to optimize the performance of the overall system. This paper describes the interconnect design, modeling, simulation, and characterization methodologies that are essential to achieve multigigabit data rates. It focuses on the physical layer verification and hardware correlation of functional systems and silicon to ensure robust system operation over 3.2Gb/s data rate using conventional low-cost packaging and printed circuit board (PCB) technologies. In order to capture conductor and dielectric losses, as well as other high-frequency effects of three-dimensional structures, accurate measurement-based simulation techniques that directly incorporate frequency-domain parameters from measurement or electromagnetic solver parameters into circuit simulation tools using fast Fourier transform (FFT) and bandlimiting windowing techniques are developed. Finally, simulation waveforms are correlated with prototypes at both component and system levels in both time and frequency domains. 相似文献
158.
H. Postma J. D. Bowman C. D. Bowman J. E. Bush P. P. J. Delheij C. M. Frankle C. R. Gould D. G. Haase J. Knudson G. E. Mitchell S. Penttilä N. R. Roberson S. J. Seestrom J. J. Szymansky S. H. Yoo V. W. Yuan X. Zhu 《Hyperfine Interactions》1992,75(1-4):153-163
Parity violation effects have been studied at 40 neutron p-wave resonances of the even-even nuclei238U and232Th. Of these 11 show parity violation effects larger than 2 standard deviations, making parity violation a rather common phenomenon.
Parity mixing up to 10% has been found. The root-mean squared matrix elements for parity violation derived from these resonances
are M=0.58 (+0.50/-0.25) meV for238U, respectively 1.39 (+0.35/-0.38) meV for232Th. 相似文献
159.
160.
CMOS artificial subretinal chip for natural light illumination 总被引:1,自引:0,他引:1
A novel CMOS oscillating pixel array for subretinal prosthesis used in natural light illumination is presented. Its prototype chips are fabricated in a standard 0.6 /spl mu/m CMOS technology. Experimental results show the device can deliver effective self-oscillation for subretinal electrical stimulation. 相似文献