Influence of preparation method on SrMoO4 impurity content and magnetotransport properties of double perovskite Sr2FeMoO6 polycrystals

The magnetic and electric properties of the Sr₂FeMoO₆ compound produced under different preparation conditions were studied. Depending on the preparation condition, a strong variation in the nonmagnetic SrMoO₄ impurity content was found, which in turn determined the metallic or semiconducting behavior of the resistivity of the Sr₂FeMoO₆ compound. There was also evidence that SrMoO₄ played a crucial role in modifying the low magnetic field intergrain tunneling magnetoresistance in Sr₂FeMoO₆. In addition, we have established a simple method to prepare the single phase Sr₂FeMoO₆ polycrystals.     

基于参差距离的相位差变化值的解模糊方法研究

利用相位差及其变化率对辐射源进行定位是新近提出的一种快速单基无源定位方法。本文分析了利用相位干涉议得到的相位差变化值的相位模糊特点,提出了一种利用相位干涉仪的接收天线之间的参差距离对相位差变化值进行解模糊的方法,讨论了正确解模糊的条件和范围,并给出了仿真结果。     

光通信技术讲座--(五):WDM系统光节点器件

介绍WDM系统光节点所用到的器件,如波长转换器、光分插复用器及其使用的光隔离器和光环形器.     

Fuzzy集的基数

关于Fuzzy集的基数，[1]中曾对有限支集的Fuzzy集以及极苛刻条件下的无限Fuzzy集给出过一种定义。但是，正如本文将要指出的那样，该定义是不合理的。本文将从研究Fuzzy映射入手，给出Fuzzy集基数的一般性定义。基于这一定义，不但得到有关基数的大部分结论，而且有其自身的特殊性。     

JEC-FDTD for 2-D conducting cylinder coated by anisotropic magnetized plasma

The JE convolution finite-difference-time-domain (JEC-FDTD) method is extended to the anisotropic magnetized plasma which incorporates both anisotropy and frequency dispersion at the same time, enabling the transient solution of the electromagnetic wave propagation in anisotropic magnetized plasmas. Two-dimensional JEC-FDTD formulations for magnetized plasma are derived. The back scattering radar cross section (RCS) of a perfectly conducting cylinder coated by a layer of magnetized plasmas is calculated.     

MOS RF reliability subject to dynamic voltage stress-modeling and analysis

Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of dc stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance.     

Design, modeling, and hardware correlation of a 3.2Gb/s/pair memory channel

With the rapid advance of silicon process technology, it is now possible to design input/output (I/O) circuits that operate at multigigabit data rates. As a result, accurate modeling and analysis of high-speed interconnect systems is essential to optimize the performance of the overall system. This paper describes the interconnect design, modeling, simulation, and characterization methodologies that are essential to achieve multigigabit data rates. It focuses on the physical layer verification and hardware correlation of functional systems and silicon to ensure robust system operation over 3.2Gb/s data rate using conventional low-cost packaging and printed circuit board (PCB) technologies. In order to capture conductor and dielectric losses, as well as other high-frequency effects of three-dimensional structures, accurate measurement-based simulation techniques that directly incorporate frequency-domain parameters from measurement or electromagnetic solver parameters into circuit simulation tools using fast Fourier transform (FFT) and bandlimiting windowing techniques are developed. Finally, simulation waveforms are correlated with prototypes at both component and system levels in both time and frequency domains.     

Parity violation at neutron p-wave resonances of238U and232Th and related questions

Parity violation effects have been studied at 40 neutron p-wave resonances of the even-even nuclei²³⁸U and²³²Th. Of these 11 show parity violation effects larger than 2 standard deviations, making parity violation a rather common phenomenon. Parity mixing up to 10% has been found. The root-mean squared matrix elements for parity violation derived from these resonances are M=0.58 (+0.50/-0.25) meV for²³⁸U, respectively 1.39 (+0.35/-0.38) meV for²³²Th.     

MEMS技术对火控系统的影响

结合火控系统的发展趋势 ,说明了MEMS技术在火控系统中的应用 ,分析了MEMS技术在机械结构、系统性能以及体系结构等方面对火控系统的影响     

CMOS artificial subretinal chip for natural light illumination

A novel CMOS oscillating pixel array for subretinal prosthesis used in natural light illumination is presented. Its prototype chips are fabricated in a standard 0.6 /spl mu/m CMOS technology. Experimental results show the device can deliver effective self-oscillation for subretinal electrical stimulation.