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131.
Experimental data on the effect of thallium and sodium impurities on the lattice heat conductivity of PbTe at room temperature
are reported. Because the lattice of lead chalcogenides is strongly polarized near charged impurities, the effect of impurities
on the lattice heat conductivity depends substantially on their charge state. This property of the material has been used
to determine the charge state of the thallium impurity in PbTe. The results obtained argue for a model of quasi-local thallium-impurity
states which assumes low electron-correlation energy at an impurity center.
Fiz. Tverd. Tela (St. Petersburg) 40, 1206–1208 (July 1998) 相似文献
132.
Yu. A. Sharin 《Russian Physics Journal》1998,41(5):447-450
Ideas previously enunciated by the author about the physical interpretation of curvilinear space with torsion are developed.
With the new equations describing the eigenstates of such a space, the static centrosymmetric solution for gravitational and
electric fields can be made consistent with the Newton and Coulomb laws. The asymptotic behavior of the axisymmetric solution
at infinity is studied. The gyromagnetic ratio obtained is characteristic of the electron.
Ural State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, p. 56–60, May, 1998. 相似文献
133.
We use the eikonal approximation to develop a general formula for the cross sections of inelastic collisions of multicharged
fast ions (including relativistic ions) with atoms that is applicable within a broad range of collision energies, has the
standard nonrelativistic limit, and becomes, in the ultrarelativistic case, the well-known result that follows from the exact
solution of the Dirac equation. As an example we study the excitation and ionization of a hydrogenlike atom, the single and
double excitation and ionization of a heliumlike atom, and multiple (up to the eighth order) ionization of the neon atom and
(up to eighteenth order) ionization of the argon atom. We derive simple analytical expressions for the inelastic cross sections
and establish recurrence relations linking the cross sections of ionization of different orders. Finally, we compare our results
with the experimental data.
Zh. éksp. Teor. Fiz. 114, 1646–1660 (November 1998) 相似文献
134.
在氢化丁苯共聚物13C-NMR谱脂肪碳部分谱带归属的基础上,根据各谱带的主要来源,推导出六个二单元浓度的计算公式。计算出二单元、一单元的相对含量,各结构单元的数均序列长度、嵌段含量和其它结构参数。加氢前后的1H-和13C-NMR谱的组成计算结果基本一致。初步探讨了作为粘度指数改进剂的氢化丁苯共聚物微观结构与性能的关系,为合成提供了依据。 相似文献
135.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
136.
Code-division multiple-access (CDMA) implemented with direct-sequence spread spectrum (DS/SS) signaling is a promising multiplexing technique for cellular telecommunications services. The efficiency of a direct-sequence spread-spectrum code-division multiple-access (DS-CDMA) system depends heavily on the shape of the spectrum of the spread signal. Maximum efficiency is obtained with an ideal brick-wall bandpass spectrum. There are two approaches toward achieving such a spectrum. One is to use a simple spreader that produces a broad spectrum and then follow it with a precise, high order filter to band limit the spectrum. A second approach, which is the approach taken in this paper, is to use a spreader that produces a spectrum close to the ideal spectrum and then employ a simple filter to control the out-of-band power. The proposed spreader/despreader is based on a simple hybrid function and can be easily implemented. An analysis provides a compact expression for the signal-to-noise ratio (SNR) of a RAKE receiver. The expression includes the effects of baseband, intermediate frequency (IF) and RF filtering as well as the effects of the spectral densities of the spreading/despreading functions. The analysis shows that the proposed spreader/despreader yields superior performance over a conventional pseudo noise (PN) spreading/despreading mechanism 相似文献
137.
138.
N. Yu. Netsvetaev 《Journal of Mathematical Sciences》1998,91(6):3460-3468
Some corollaries of the Hirzebruch-Thom signature theorem are discussed. The multiplicativity of the signature and the naturalness
of the Pontryagin classes for coverings in the case of ℚ-homology manifolds is proved. A geometric proof of Hirzebruch’s well-known
“functional equation” for the virtual signature is outlined. Bibliography: 25 titles.
Translated fromZapiski Nauchnykh Seminarov POMI, Vol. 231, 1995, pp. 197–209.
Translated by N. Yu. Netsvetaev. 相似文献
139.
Yu. B. Vasil’ev S. D. Suchalkin S. V. Ivanov B. Ya. Mel’tser A. F. Tsatsul’nikov P. V. Neklyudov P. S. Kop’ev 《Semiconductors》1997,31(10):1071-1073
Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various
growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to
scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron
resonance spectra is proposed for assessing the quality of the heterointerface.
Fiz. Tekh. Poluprovodn. 31, 1246–1248 (October 1997) 相似文献
140.
T. I. Voronina T. S. Lagunova M. P. Mikhailova K. D. Moiseev M. A. Sipovskaya Yu. P. Yakovlev 《Semiconductors》1997,31(8):763-767
Galvanomagnetic phenomena and photoconductivity in broken-gap type-II GaInAsSb/p-InAs heterojunctions with different levels of doping of the solid solution with donor (Te) or acceptor (Zn) impurities have
been investigated. It has been determined that in such structures an electronic channel, which determines the galvanomagnetic
effects in a wide range of doping levels, is present at the heterojunction. A sharp decrease of the Hall mobility was observed
in the experimental heterostructures with a high level of doping of the epitaxial layer with an acceptor impurity. The observed
effect is due to exhaustion of the electronic channel as a result of carrier localization in potential wells at the heterojunction.
Fiz. Tekh. Poluprovodn. 31, 897–901 (August 1997) 相似文献