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181.
The spectral properties of multilayer interference systems formed by multiple replication of the symmetric ternary period ABCBA are investigated. The problem of synthesis of structures with suppression of adjacent bands of high reflection of the fourth, fifth, and sixth orders among their spectral characteristics is solved. It is shown that there are only six variants of selection of the optical thicknesses of layers in a period. When the high reflection bands of the fourth, fifth, and sixth orders are suppressed, the high reflection band of the first order remains in only four cases. The values of refractive indices of layers for which the problem hasa solution are found. The refractive indices of layers in all six cases are described by different relations determining the dependence of the refractive index of one of the components on arbitrarily selected refractive indices of the other two components.  相似文献   
182.
用于机械振动实时监测的光纤光栅有源传感装置   总被引:4,自引:1,他引:3  
把一对中心反射波长分别为1562.11nm和1562.71nm的光纤光栅粘贴在均质、等厚、等腰三角形悬臂梁上下表面作为环形腔光纤激光器端镜,当机械振动激励自由端时,通过观测激光输出脉冲,地施加于自由端的机械振动的频率进行了实时监测;观察两光栅波长漂移量差值的变化,可在0~6.1mm的范围内判断所测振动的振幅。低于100Hz时,实验结果与实际值基本吻合。  相似文献   
183.
In this paper, a very useful numerical technique has been developed for analyzing the transient characteristics of a planar-spiral inductor on-chip. A locally conformal technique and an alternating-direction implicit scheme are applied to the finite-difference time-domain method. A formulation for solving three dimensional Maxwell’s equations is proposed. Using the proposed method, various parameters of the planar-spiral inductors have been analyzed and an equivalent circuit, which includes frequency-independent circuit elements, has been introduced. Highly computational efficiency is implemented. Numerical results show excellent agreement with the measured data over a wide frequency range.  相似文献   
184.
凹整数规划的分枝定界解法   总被引:3,自引:0,他引:3  
凹整数规划是一类重要的非线性整数规划问题,也是在经济和管理中有着广泛应用的最优化问题.本文主要研究用分枝定界方法求解凹整数规划问题,这一方法的基本思想是对目标函数进行线性下逼近,然后用乘子搜索法求解连续松弛问题.数值结果表明,用这种分枝定界方法求解凹整数规划是有效的.  相似文献   
185.
Studies of thickness and temperature dependencies of the dielectric susceptibility of nitrobenzene interlayers formed on conductive substrates were carried out. The obtained data were processed under the assumption of the existence of dimers (with opposite directions of molecular dipole moments) in orientationally ordered wall-adjacent layers. The results were treated on the basis of Lifshits theory.  相似文献   
186.
This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests.  相似文献   
187.
The thermodynamic properties of the Ln2BaO4 phases (Ln = Dy, Ho, Sm) were studied by the electromotive force method with a fluoride electrolyte (890–1180 K), solution calorimetry in 1.07 N hydrochloric acid at 298.15 K, and differential scanning calorimetry (298–860 K). The experimental data were jointly processed, and the thermodynamic functions of the compounds over the temperature range 298–1200 K were calculated.  相似文献   
188.
In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.  相似文献   
189.
内网安全的重要性网络的发展给工作带来巨大便利的同时也带来了众多安全隐患,有关网络信息安全的问题日益突出。目前绝大多数的企业、学校、政府机构把安全重点放在防范来自外部的攻击,依赖于防火墙、防病毒、入侵检测等软件。尽管在所有介绍系统安全的文献中都会提及来自于内部的安全威胁,却鲜有针对内部安全隐患的防范工具与手段。2003年美国CSI/FBI提供的《计算机犯罪与安全调查报告》显示,80%以上的信息安全事件为内部人员和内外勾结所为。尤其近几年来,随着个人技术水平的提高,IP地址非法占用和盗用、非法外联现象、计算机基本信息…  相似文献   
190.
This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.  相似文献   
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