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31.
Jin Tae Kim Keun Byoung Yoon Choon-Gi Choi 《Photonics Technology Letters, IEEE》2004,16(7):1664-1666
A novel fabrication process using a hot embossing technique has been developed for micromechanical passive alignment of polymer planar lightwave circuit (PLC) devices. With only one step of embossing, single-mode waveguide straight channels and micropedestals for passive aligning are simultaneously defined on a polymer thin film with an accuracy of /spl plusmn/0.5 /spl mu/m. This process reduces the steps for fabricating alignment structures. A fabricated polymer PLC chip and fibers are combined on a v-grooved silicon optical bench (SiOB) in a flip-chip manner. The process provides a coupling loss as low as 0.67 dB per coupling face and a cost-effective packaging solution for various polymer PLC devices. 相似文献
32.
Whispering-gallery-like modes in square resonators 总被引:1,自引:0,他引:1
Wei-Hua Guo Yong-Zhen Huang Qiao-Yin Lu Li-Juan Yu 《Quantum Electronics, IEEE Journal of》2003,39(9):1106-1110
The mode frequencies and field distributions of whispering-gallery (WG)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the FDTD technique and Pade approximation method. In the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. The WG-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers. 相似文献
33.
Shi-Jin Ding Hang Hu Lim H.F. Kim S.J. Yu X.F. Chunxiang Zhu Li M.F. Byung Jin Cho Chan D.S.H. Rustagi S.C. Yu M.B. Chin A. Dim-Lee Kwong 《Electron Device Letters, IEEE》2003,24(12):730-732
For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications. 相似文献
34.
Dispersion-relation-preserving FDTD algorithms for large-scale three-dimensional problems 总被引:1,自引:0,他引:1
We introduce dispersion-relation-preserving (DRP) algorithms to minimize the numerical dispersion error in large-scale three-dimensional (3D) finite-difference time-domain (FDTD) simulations. The dispersion error is first expanded in spherical harmonics in terms of the propagation angle and the leading order terms of the series are made equal to zero. Frequency-dependent FDTD coefficients are then obtained and subsequently expanded in a polynomial (Taylor) series in the frequency variable. An inverse Fourier transformation is used to allow for the incorporation of the new coefficients into the FDTD updates. Butterworth or Chebyshev filters are subsequently employed to fine-tune the FDTD coefficients for a given narrowband or broadband range of frequencies of interest. Numerical results are used to compare the proposed 3D DRP-FDTD schemes against traditional high-order FDTD schemes. 相似文献
35.
近两年.IP电话又叫网络电话的发展受到全球的关注。随着宽带接入的发展,基于宽带接入提供的网络电话具有了更大的生命力。从宽带电话的经营模式出发,探究这类业务的出现时现有话音业务市场的影响,进而分析这类业务的发展前景。 相似文献
36.
37.
对在实际组网中选择合理的ASON架构和保护方式作了相应分析,并为搭建可向ASON平滑演进的传统网络时需注意的问题提供了参考意见, 相似文献
38.
39.
Chun-Yuan Chen Shiou-Ying Cheng Wen-Hui Chiou Hung-Ming Chuang Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(3):126-128
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications. 相似文献
40.
Hao Wang Ying Lin Biao Chen 《Signal Processing, IEEE Transactions on》2003,51(10):2613-2623
We investigate non data-aided channel estimation for cyclically prefixed orthogonal frequency division multiplexing (OFDM) systems. By exploiting channel diversity using only two receive antennas, a blind deterministic algorithm is proposed. Identifiability conditions are derived that guarantee the perfect channel retrieval in the absence of noise. In the presence of noise, the proposed method has the desired property of being data efficient-only a single OFDM block is needed to achieve good estimation performance for a wide range of SNR values. The algorithm is also robust to input symbols as it does not have any restriction on the input symbols with regard to their constellation or their statistical properties. In addition, this diversity-based algorithm is computationally efficient, and its performance compares favorably to most existing blind algorithms. 相似文献