IC卡在电信领域的应用模式

本文列举了ＩＣ卡在电信领域及一些国家和地区的应用之后，给出了国际ＩＣ卡的应用发展模式，以供有关部门参考。     

新型可调剪切差平行分束偏光器设计

本文给出了一种新型可调的切差平行分束偏光器设计。它调节方便,可获得较大平行分束剪切差,并可一镜多用     

基于矩的异分辨率图象边界检测

（１）本文引入仿射变换，提出了一种用矩算子以民分辨率图象直接进行边界检测的方法，利用同分辨率图象正方形窗口的模板行矩的计算，推导出了相应用的边界参数公式。（２）本文提出一种隐线笥插值矩计算方法，得到一组与正方形窗口对应的正方形模板，避免了费时的预插值过程，（３）对本文提出的方法进行了实验验证，并给出了实验结果。     

奇点理论浅引

本文是奇点理论的非正式的介绍。主要内容包括奇点分类与奇点拓扑的基本问题与结果。特别突出了简单奇点的券的性质及其与Ｌｉｅ代数的关系。本文的目的在于引起读者对一分支的兴趣。     

Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm² was obtained. The emission current density from the SiNC films reached 1 mA/cm² under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.     

Polaron effects on third-harmonic generation in cylindrical quantum-well wires

Polaron effects on third-harmonic generation (THG) in cylindrical quantum wires with a finite confining potential are investigated. The THG coefficient is obtained by using the compact-density-matrix approach and an iterative method, and the numerical results are presented for GaAs/AlAs cylindrical quantum wires. The results show that the THG coefficient is greatly enhanced and the peak shift to the aspect of high energy when considering the influence of electron-phonon interaction.     

npn AlGaN/GaN HBT模型与特性分析

基于实验数据对GaN材料的少子寿命和碰撞电离率进行了建模,应用漂移-扩散传输模型开展了npnAlGaN/GaN异质结双极晶体管的特性研究,给出了器件导通电压、偏移电压和饱和电压的解析式.结果表明:实际器件导通电压、偏移电压及饱和电压较大的原因主要是高基区电阻和基区接触的非欧姆特性,为器件的工艺制造提供了理论指导.     

一种低压低功耗SRAM/SOI单元设计

提出一种改进4管自体偏压结构SRAM/SOI单元.基于TSUPREM4和MEDICI软件的模拟和结构性能的分析,设计单元结构并选取结构参数.该结构采用nMOS栅下的含p+埋沟的衬底体电阻代替传统6管CMOSSRAM单元中的pMOS元件,具有面积小、工艺简单的优点.该结构可以在0.5V的电源电压下正常工作,与6管单元相比,该单元瞬态响应正常,功耗只有6管单元的1/10,满足低压低功耗的要求.     

Efficient 3-d capacitance extraction considering lossy substrate with multilayered green's function

An efficient algorithm for extraction of three-dimensional (3-D) capacitance on multilayered and lossy substrates is presented. The new algorithm presents a major improvement over the quasi-3-D approach used in a Green's function-based solver and takes into consideration the sidewalls of 3-D conductors. To improve the efficiency of the computation and the transformation of the Green's function, a nonuniform grid is adopted. The most computationally intensive part in the transformation of the Green's function is computed separately as technology-independent matrices Tk foremost. Once computed, Tk can be stored and used for any technology, thus the storage requirement and computational complexity are reduced from O (S/sup 2/) and O (S/sup 2/ log S/sup 2/), respectively, to just O [(log S/sub max/)/sup 2/]. Extensive tests have been performed to verify the new algorithm, and its accuracy has been established by comparing with other programs.